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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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FGH40N60SMDF 600 V, 40 A Field Stop IGBT Features Applications * Maximum Junction Temperature : TJ = 175C * Solar Inverter, UPS, Welder, PFC, Telecom, ESS * Positive Temperaure Co-efficient for Easy Parallel Operating General Description * High Current Capability * Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A Using Novel Field Stop IGBT Technology, Fairchild's new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. * High Input Impedance * Fast Switching: EOFF = 6.5 uJ/A * Tightened Parameter Distribution * RoHS Compliant E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC TL V 80 A A @ TC = 25 C @ TC = 25oC 349 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 20 A o Storage Temperature Range V 40 Maximum Power Dissipation Tstg Unit 600 120 o Pulsed Collector Current @ TC = 100 C 174 Operating Junction Temperature TJ Ratings W -55 to +175 o C -55 to +175 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RJC(IGBT) Thermal Resistance, Junction to Case - 0.43 o C/W RJC(Diode) Thermal Resistance, Junction to Case - 1.45 o C/W RJA Thermal Resistance, Junction to Ambient (c)2010 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. C1 - 1 40 oC/W www.fairchildsemi.com FGH40N60SMDF -- 600 V, 40 A Field Stop IGBT November 2013 Part Number Top Mark FGH40N60SMDF FGH40N60SMDF Package Packing Method TO-247 Parameter Tape Width Quantity N/A N/A 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 A - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA 3.5 4.6 6.0 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE IC = 40 A, VGE = 15 V - 1.9 2.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, TC = 150oC - 2.1 - V - 1880 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz - 180 - pF - 50 - pF Switching Characteristics td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 20 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC - 92 - ns - 13 20 ns - 1.3 - mJ - 0.26 - mJ Ets Total Switching Loss - 1.56 - mJ td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 19 - ns td(off) Turn-Off Delay Time - 97 - ns tf Fall Time - 14 21 ns Eon Turn-On Switching Loss - 2.09 - mJ Eoff Turn-Off Switching Loss - 0.44 - mJ Ets Total Switching Loss - 2.53 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge (c)2010 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. C1 VCC = 400 V, IC = 40 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 150oC VCE = 400 V, IC = 40 A, VGE = 15 V 2 - 119 - nC - 13 - nC - 58 - nC www.fairchildsemi.com FGH40N60SMDF -- 600 V, 40 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25C unless otherwise noted Test Conditions IF = 20 A IF =20 A, diF/dt = 200 A/s Qrr Diode Reverse Recovery Charge (c)2010 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. C1 Min. Typ. Max TC = 25oC - 1.3 1.7 TC = 150oC - 1.2 TC = 25oC - 70 - 126 TC = 25oC - 207 o - 638 TC = 150oC TC = 150 C 3 90 290 Unit V ns nC www.fairchildsemi.com FGH40N60SMDF -- 600 V, 40 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 20V 15V o Collector Current, IC [A] TC = 25 C Figure 2. Typical Output Characteristics 120 12V o TC = 150 C 10V Collector Current, IC [A] 120 90 60 VGE = 8V 30 0 0 2 4 Collector-Emitter Voltage, VCE [V] VGE = 8V 30 0 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Transfer Characteristics 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o TC = 25 C 90 TC = 25 C Collector Current, IC [A] o Collector Current, IC [A] 10V 60 0 120 o TC = 150 C 60 30 0 12V 90 6 Figure 3. Typical Saturation Voltage Characteristics 20V 15V 90 T = 150oC C 60 30 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3.0 80A 2.5 2.0 40A 1.5 IC = 20A 1.0 25 o TC = -40 C 16 12 8 40A (c)2010 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. C1 150 4 80A 4 IC = 20A 0 50 75 100 125 o Case Temperature, TC [ C] Common Emitter 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SMDF -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE TC = 25 C 16 12 8 40A 80A 4 IC = 20A 0 o TC = 150 C 16 12 8 80A 4 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 12 VCC = 100V 200V 9 300V 6 3 Cres 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 11. SOA Characteristics 40 80 Gate Charge, Qg [nC] 120 Figure 12. Turn-on Characteristics vs. Gate Resistance 300 100 100 10s tr 100s 1ms 10 ms DC 10 Switching Time [ns] Collector Current, Ic [A] 0 1 *Notes: 0.1 o td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A 1. TC = 25 C o TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] (c)2010 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. C1 o TC = 150 C 1 1000 0 10 20 30 40 50 Gate Resistance, RG [] 5 www.fairchildsemi.com FGH40N60SMDF -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 1000 Common Emitter VGE = 15V, RG = 6 o TC = 25 C 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o Switching Time [ns] Switching Time [ns] td(off) 100 TC = 150 C tr 10 td(on) o TC = 25 C o TC = 150 C 1 0 10 20 30 Gate Resistance, RG [] 40 1 20 50 30 40 50 60 70 80 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 5 1000 Eon Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 25 C o TC = 150 C o TC = 150 C 1 20 0.1 30 40 50 60 70 80 0 10 20 30 40 50 Gate Resistance, RG [ ] Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA Characteristics 6 200 100 Collector Current, IC [A] Switching Loss [mJ] Eon 1 Eoff Common Emitter VGE = 15V, RG = 6 o TC = 25 C 10 Safe Operating Area o o TC = 150 C 0.1 20 30 40 50 60 70 VGE = 15V, TC = 150 C 1 80 1 Collector Current, IC [A] (c)2010 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. C1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH40N60SMDF -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics FGH40N60SMDF -- 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 1000 100 o TC = 150 C Reverse Currnet, IR [A] Forward Current, IF [A] 100 o TC = 150 C o TC = 75 C 10 o TC = 25 C o TC = 25 C 10 o TC = 75 C 1 0.1 o TC = 25 C 0.01 o TC = 75 C ---o TC = 150 C 1 0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 1E-3 2.5 0 Figure 21. Stored Charge 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 22. Reverse Recovery Time 350 120 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 100 300 250 200A/s 200 150 100 diF/dt = 100A/s 50 0 5 10 15 20 25 30 Forwad Current, IF [A] 35 100 diF/dt = 100A/s 80 200A/s 60 40 40 5 10 15 20 25 30 35 40 Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.01 PDM 0.05 0.02 0.01 single pulse 0.006 0.00001 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration [sec] (c)2010 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. C1 7 www.fairchildsemi.com FGH40N60SMDF -- 600 V, 40 A Field Stop IGBT Mechanical Dimensions Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. 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