NPN SILICON TRANSISTOR Semelab Limited 2N3766 * LOW SATURATION VOLTAGE * HIGH GAIN CHARACTERISTICS * HERMETICALLY SEALED TO-66 METAL PACKAGE * SCREENING OPTIONS AVAILABLE * SWITCHING APPLICATIONS * MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCEO VCBO Collector - Emitter Voltage 60V 80V 6V 4A 2A 25W 143mW/C -65 to +200C Collector - Base Voltage VEBO Emitter - Base Voltage IC Collector Current IB Base Current PT Power Dissipation at TC = 25C Derate Above 25C TJ,Tstg Operating & Storage Junction Temperature Range THERMAL PROPERTIES Parameters RJC Min. Typ. Junction - case thermal resistance Max. Unit 7 C/W DYNAMIC CHARACTERISTICS Parameters Test Conditions Min. Typ. Max. Unit. |hfe| IC = 500mA Small - Signal Short - Circuit Forward Current Transfer Ratio f = 10 MHz Cobo Output Capacitance IE = 0 f = 1.0MHz ton Turn - On Time VCC = 30V IC = 0.5A IB1 = 0.05A Turn - off Time VCC = 30V IC = 0.5A IB1 = IB2 = 0.05A toff VCE = 10V 1.0 VCB = 10V 8 MHz 50 pF 0.25 s 2.5 * Pulse Test tp = 300s, 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK. Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: sales@semelab.co.uk SEMELAB Website: http://www.semelab.co.uk A subsidiary of TT electronics plc. Document Number 8084 Issue 1 NPN SILICON TRANSISTOR Semelab Limited 2N3766 ELECTRICAL CHARACTERISTICS Parameters V(BR)CEO* ICEO ICEX (TC = 25C unless otherwise stated) Test Conditions Collector Emitter Breakdown IC = 100mA Voltage Collector - Emitter Cut-Off Min. IB = 0 Typ. 60 500 VCE = 80V VBE = -1.5V VCE = 50V VBE = - 1.5V A 10 Collector - Emitter Cut-Off Current 1.0 TC = 150C IEBO Emitter - Base Cut-Off Current IC = 0 ICBO Collector - Base Cut-Off Current IE = 0 VBE* Base - Emitter Voltage IC = 1.0A VCE = 10V IC = 50mA VCE = 5V 30 IC = 500mA VCE = 5V 40 IC = 1A VCE = 10V 20 IC = 500mA VCE = 5V TC = -55C 13 IC = 0.5A IC = 1.0A Base - Emitter Saturated Voltage IC = 1.0A hFE* VCE(sat)* VBE(sat)* Forward - Current Transfer Ratio Unit. V VCE = 60V Current Max. VEB = 6V mA 500 A Collector Emitter Saturation Voltage VCB = 80V 10 1.5 V IB = 50mA IB = 100mA 1.0 2.5 V IB = 100mA 1.5 Mechanical Data Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) 3.68 (0.145) rad. max. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO-213AA) 1 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK. Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: sales@semelab.co.uk 2 - Emitter Case = Collector Website: http://www.semelab.co.uk Document Number 8084 Issue 1