NPN SILICON TRANSISTOR
Semelab Limited
2N3766
• LOW SATURATION VOLTAGE
• HIGH GAIN CHARACTERISTICS
• HERMETICALLY SEALED TO-66 METAL
PACKAGE
• SCREENING OPTIONS AVAILABLE
• SWITCHING APPLICATIONS
• MEDIUM POWER AMPLIFIER APPLICATIONS
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Document Number 8084
Issue 1
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK.
Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
A subsidiary of
TT electronics plc.
SEMELAB
VCEO Collector - Emitter Voltage
VCBO Collector - Base Voltage
VEBO Emitter - Base Voltage
ICCollector Current
IBBase Current
PTPower Dissipation at TC= 25°C
Derate Above 25°C
TJ,Tstg Operating & Storage Junction Temperature Range
60V
80V
6V
4A
2A
25W
143mW/°C
-65 to +200°C
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated)
THERMAL PROPERTIES
Parameters Min. Typ. Max. Unit
RθJC Junction - case thermal resistance 7°C/W
Parameters Test Conditions Min. Typ. Max. Unit.
|hfe|Small - Signal Short - Circuit
Forward Current Transfer Ratio
IC= 500mA VCE = 10V
f = 10 MHz 1.0 8MHz
Cobo Output Capacitance IE= 0 VCB = 10V
f = 1.0MHz 50 pF
ton Turn - On Time VCC = 30V
IC= 0.5A IB1 = 0.05A 0.25
μs
toff Turn - off Time VCC = 30V
IC= 0.5A IB1 = IB2 = 0.05A 2.5
DYNAMIC CHARACTERISTICS
* Pulse Test tp= 300μs, δ≤2%
NPN SILICON TRANSISTOR
Semelab Limited
Document Number 8084
Issue 1
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK.
Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N3766
ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise stated)
Parameters Test Conditions Min. Typ. Max. Unit.
V(BR)CEO* Collector Emitter Breakdown
Voltage IC= 100mA IB= 0 60 V
ICEO Collector - Emitter Cut-Off
Current VCE = 60V 500
μA
ICEX Collector - Emitter Cut-Off
Current
VCE = 80V VBE = -1.5V 10
VCE = 50V VBE = - 1.5V
TC= 150°C 1.0 mA
IEBO Emitter - Base Cut-Off
Current IC= 0 VEB = 6V 500
μA
ICBO Collector - Base Cut-Off
Current IE= 0 VCB = 80V 10
VBE* Base - Emitter Voltage IC= 1.0A VCE = 10V 1.5 V
hFE*Forward - Current Transfer
Ratio
IC= 50mA VCE = 5V 30
IC= 500mA VCE = 5V 40
IC= 1A VCE = 10V 20
IC= 500mA VCE = 5V
TC= -55°C 13
VCE(sat)* Collector Emitter Saturation
Voltage
IC= 0.5A IB = 50mA 1.0
V
IC= 1.0A IB= 100mA 2.5
VBE(sat)* Base - Emitter Saturated Voltage IC= 1.0A IB= 100mA 1.5
24.13 (0.95)
24.63 (0.97)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
4.08(0.161)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
12
Mechanical Data
Dimensions in mm (inches)
TO66 (TO-213AA)
1 - Base 2 - Emitter Case = Collector
