BY228/13 / BY228/15 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features * * * * Glass passivated junction Hermetically sealed package e2 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 949588 Applications Mechanical Data High voltage rectification Efficiency diode in horizontal deflection circuits Case: SOD-64 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Parts Table Part Type differentiation Package BY228-13 VR = 1000 V; IFAV = 3 A SOD-64 BY228-15 VR = 1200 V; IFAV = 3 A SOD-64 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Peak reverse voltage, non repetitive IR = 100 A Reverse voltage see electrical characteristics Peak forward surge current Part Symbol Value Unit BY228/13 VRSM 1300 V BY228/15 VRSM 1500 V BY228/13 VR 1000 V BY228/15 VR 1200 V IFSM 50 A IFAV 3 A Tj 140 C Tstg - 55 to + 175 C ER 10 mJ tp = 10 ms, half sinewave Average forward current Junction temperature Storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Document Number 86004 Rev. 1.6, 14-Apr-05 Test condition on PC board with spacing 25 mm Symbol Value Unit RthJA 70 K/W www.vishay.com 1 BY228/13 / BY228/15 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Forward voltage IF = 5 A Reverse current VR = 1000 V Part Symbol Min Typ. Max VF Unit 1.5 V 5 A BY228-13 IR 2 VR = 1200 V BY228-15 IR 2 5 A VR = 1000 V, Tj = 140 C BY228-13 IR 140 A VR = 1200 V, Tj = 140 C BY228/15 A IR 140 Total reverse recovery time IF = 1 A, - diF/dt = 0.05 A/s trr 20 s Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0,25 A trr 2 s R thJA - Therm. Resist. Junction/Ambient (K/W) Typical Characteristics (Tamb = 25 C unless otherwise specified) 40 I FA - Average Forward Current ( A ) 3.5 30 20 l l 10 TL 0 0 5 10 15 20 25 1.0 0.5 RthJA = 70 K/W PCB: d = 25 mm 0 25 50 75 100 125 150 Tamb - Ambient Temperature ( C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature 1000 I R - Reverse Current ( A ) I F - Forward Current (A) 1.5 0 100 10 Tj =150 C 1 Tj = 25C 0.1 0.01 V R = VRRM 100 10 1 0.5 1.0 1.5 2.0 2.5 Figure 2. Forward Current vs. Forward Voltage www.vishay.com 25 3.0 V F - Forward Voltage ( V ) 16402 2 2.0 16403 Figure 1. Typ. Thermal Resistance vs. Lead Length 0.001 0.0 2.5 30 l - Lead Length ( mm ) 94 9081 V R = VRRM half sinewave R thJA = 25 K/W l = 10 mm 3.0 16404 50 75 100 125 150 Tj - Junction T emperature ( C ) Figure 4. Reverse Current vs. Junction Temperature Document Number 86004 Rev. 1.6, 14-Apr-05 BY228/13 / BY228/15 Vishay Semiconductors 70 PR - Reverse Power Dissipation ( mW ) 350 CD - Diode Capacitance ( pF ) V R = V RM 300 250 PR -Limit @100 % VR 200 150 PR -Limit @80 % VR 100 50 16405 50 75 100 125 Tj - Junction Temperature ( C ) 50 40 30 20 10 0 0.1 0 25 f =1 MHz 60 150 1 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 10 100 V R - Reverse Voltage ( V ) 16406 Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. ISO Method E 1.35 (0.053) max. 26(1.014) min. Document Number 86004 Rev. 1.6, 14-Apr-05 4.0 (0.156) max. 26 (1.014) min. 94 9587 www.vishay.com 3 BY228/13 / BY228/15 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 86004 Rev. 1.6, 14-Apr-05