BY228/13 / BY228/15
Document Number 86004
Rev. 1.6, 14-Apr-05
Vishay Semiconductors
www.vishay.com
1
949588
Standard Avalanche Sinterglass Diode
Features
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High voltage rectification
Efficiency diode in horizontal deflection circuits
Mechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Package
BY228-13 VR = 1000 V; IFAV = 3 A SOD-64
BY228-15 VR = 1200 V; IFAV = 3 A SOD-64
Parameter Test condition Part Symbol Value Unit
Peak reverse voltage, non
repetitive
IR = 100 µA BY228/13 VRSM 1300 V
BY228/15 VRSM 1500 V
Reverse voltage see electrical characteristics BY228/13 VR1000 V
BY228/15 VR1200 V
Peak forward surge current tp = 10 ms, half sinewave IFSM 50 A
Average forward current IFAV 3A
Junction temperature Tj140 °C
Storage temperature range Tstg - 55 to + 175 °C
Non repetitive reverse
avalanche energy
I(BR)R = 0.4 A ER10 mJ
Parameter Test condition Symbol Value Unit
Junction ambient on PC board with spacing
25 mm
RthJA 70 K/W
e2
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Document Number 86004
Rev. 1.6, 14-Apr-05
BY228/13 / BY228/15
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 5 A VF1.5 V
Reverse current VR = 1000 V BY228-13 IR25µA
VR = 1200 V BY228-15 IR25µA
VR = 1000 V, Tj = 140 °C BY228-13 IR140 µA
VR = 1200 V, Tj = 140 °C BY228/15 IR140 µA
Total reverse recovery time IF = 1 A, - diF/dt = 0.05 A/µst
rr 20 µs
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0,25 A trr 2µs
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
94 9081
ll
TL
0
10
20
30
40
R - Therm. Resist. Junction/Ambient (K/W)
05
l - Lead Length ( mm )
15 3020
thJA
10 25
I - Forward Current (A)
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
- Forward Voltage(V)
16402
F
T
j
=25°C
T
j
=150 °C
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Reverse Current vs. Junction Temperature
16403
R
thJA
= 25 K/W
l=10mm
R
thJA
= 70 K/W
PCB:d=25mm
V
R
=V
RRM
half sinewave
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0755025 125100 150
T
amb
- Ambient Temperature (°C)
I - Average Forward Current ( A )
FA
1
10
100
1000
25 50 75 100 125 150
T
j
- Junction T emperature ( °C)
16404
V
R
=V
RRM
I - Reverse Current ( µA)
R
BY228/13 / BY228/15
Document Number 86004
Rev. 1.6, 14-Apr-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
16405
0
50
100
150
200
250
300
350
25 50 75 100 125 150
T
j
- Junction Temperature (°C)
V
RRM
=V
P - Reverse Power Dissipation ( mW )
R
P
R
-Limit
@100 % V
P
R
-Limit
@80%V
R
R
Figure 6. Diode Capacitance vs. Reverse Voltage
0
10
20
30
40
50
60
70
0.1 1 10 100
V
R
– Reverse Voltage(V)
16406
C – Diode Capacitance ( pF )
D
f=1MHz
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4.0 (0.156) max.
Sintered Glass Case
SOD-64
94 9587
26(1.014) min. 26 (1.014) min.
ISO Method E
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Document Number 86004
Rev. 1.6, 14-Apr-05
BY228/13 / BY228/15
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
