3875081 G E SOLID STATE Aigh-Voltage Power lransisvrs 2N3583-2N3585, 2N4240 High-Voltage Silicon N-P-N Transistors For High-Speed Switching and Linear-Amplifier Applications Features: us Freedom from second breakdown = Economy types for ac/de circults a Fast turn-on time at high collector current RCA-2N3583, 2N3584e, 2N3585e, and2N4240, are silicon n-p-n transistors with high breakdown voltages and fast switching speeds. Typical applications for these transistors include high- voltage operational amplitiers, high-voltage switches, switching regulators, converters, inverters, defiection and hi-fi amplifiers. - These transistors are also intended for a wide varitey of applications in ac/dce commercial equipment. All types utilize the JEDEC TO-213AA package. ee Formerly Dev. Nos. TA2510, TA2511, TA2512, and TA2671 respectively. MAXIMUM RATINGS, Absolute-Maximum Values: O1 DE 3875081 0017154 & : O1F 17158 D T- 33-4 File Number 138 - TERMINAL DESIGNATIONS c EN {FLANGE} 92CS-27516 JEDEC TO-213AA 2N3585 2N2583 2N3584 2N4240 * COLLECTOR-TO-BASE VOLTAGE, Vopo..s ees ererscececceeraeecertes 250 375 500 v * COLLECTOR-TO-EMITTER VOLTAGE, Sustaining, Vceo(sus) .. 175 250 300 Vv * EMITTER-TO-BASE VOLTAGE, Veno ...+-eeeeceeeceeereers 6 6 6 Vv * CONTINUOUS COLLECTOR CURRENT, Ic . 1 2 2 A * PEAK COLLECTOR CURRENT.....s:esses: . 5 5 A * CONTINUOUS BASE CURRENT, la... 2... ceree eee ee enter ee eeeereees 1 1 1 A * TRANSISTOR DISSIPATION, Pr At Case Temperature (Tc) = 25C .....00eeeee 35 35 WwW At Case Temperatures Above 25C Derate Linearly at 0.2 wrec For Other Conditions ......cscceeceeseccrernenee de cecenencerneners Derate Linearly to 200 S * TEMPERATURE RANGE: Storage and Operating (JUNCtOn) .....-seeeveeseereerecerrseerenrs -65 to +200 c * PIN TEMPERATURE: - . At distance 1/16 In. (1.58 mm) from seating plane soe - FOF 10S. MAX. .ccccccaceceseece cee enennenerseneenaenens ren eeeeeens 235 236 235 C * In accordance with JEDEC registration data format JS-6 RDF-2 (2N3683), JS-6 ADF-1 (2N3584, 2N3585, 2N4240). Te + - wdoe eee OF DE fj 3875081 0017159 3 3875081 GE SOLID STATE o1 17159 +O T-3B"1) High-Voltage Power Transistors _2N3583-2N3585, 2N4240 = 250C Unless Otherwise Specified ELECTRICAL CHARACTERISTICS at Case (TT CHARACTERISTIC ] SYMBOL VOLTAGE Vde CURRENT mAde Collector-Cutoff Currant AtTe = 160C Emitter-Cutoff Current OC Forward-Current Transfer Ratio Sustaining Voltage: With base emitter resistance = 602 'ceR Veg (satl Saturation Veg (sath Saturation Gurrent Transfer Ratio {=5 MHz f = TkHz Me Emitter, Small-Signal, Short-Circuit, Forward Current Transfer Ratio =5MHz Veg = 10 V1 = 1 MHz Collector Current with base forward- blased** (See Figs 1&2) Tima (Vgg = 200 V): Rise Time Resistance: Rec Junction-to-Ambient ROJA *{n accordance with JEDEC registration deta format JS RDF-2 (2N3583), J$-6 RDF-1 (2N3584, 2N3585, 2N4240) CAUTION: The sustaining voltages Veg (sush MUST NOT be measured on a curve tracer. - ** Specified value of ig/p for given value of Ve 28 base voltage is increased from zero in a positive direction, 8 puted, pulte duration = 300 ys; duty factor 2%. * . 0701 A-10 a eee EETF _. DE Pp 387soa1 OOL7Ub1 & _O1E i71et op TBS 3875081 G E SOLID STATE High-Voltage Power Transistors Fig. 3 - Typical collector-to-emitter saturation voltage vs. currant Fig. & - Reverse-bias second breakdown characteristics for types ft E 3 SATURATION VOLTAGE, 2 oO COLLECTOR CURRENT (Ip}A 3258-3129 for types 2N3584 and 2N3585. BASE-TO-EMITTER VOLTAGE (Vag) " 4 WOUCTANCE (L) 100 gH COLLECTOR CURRENTA EXTERNAL BASE-TO-EMITTER RESISTANCE (Rpp)2 9258-317 2N3584 and 2N3585. CASE TEMPERATURE (To}*C 9258-2796 Fig. 7 - Dissipation derating curves for all types. 2N3583-2N3585, 2N4240 TEMPERATURE (To )= 25C -TO-EMITTER VOLTAGE (Vars4V BASE-TO- EMITTER RESISTANCE PEAK COLLECTOR CURRENTA INDUGTANCE (L)pH 9205-20001 Fig. 4 - Reverse-bias second breakdown characteristics for types 2N3584 and 2N3585. CASE TEMPERATURE (To) = 25C EXTERNAL BASE-TO-EMITTER RESISTANCE (Fie) = 20 0 SHDUCTANCE (L} #00 nH BASE-TO-EMITTER VOLTAGE (Vpe)V 9288-3118 Fig. 6 - Reverse-bias second breakdown characteristics for types 2N3584 and 2N3565. TRANSISTOR DISSIPATION (P7)W AMBIENT TEMPERATURE (Ta) C 9258-2666Rt Fig. 8 - Dissipation derating curve for types 2N3583, 2N3564, 2N3505, and 2N4240. 163 0703 A-12, SOT SEE atecannes mm ee a a ra EE EER ae oN Ot De Waa7soa1 cor7iee 6 Of 5 3875081 G E SOLID STATE High-Voltage Power Transistors 2N3583-2N3585, 2N4240 TEMPERATURE ( COLLECTOR CURRENT (Ig) ma , . [ 0 25 $0 75 100 125 180 ITS COLLECTOR-TO-EMITTER VOLTAGE (Vce)- 9208-20002 "Fig. 9 - Typical output characteristics for type 2N3583. PULSE DURATION =20 REPETITION RATE 1000 PULS HE AT UOC TABE (veg #200 V : See TEMPERATURE ("cl = 25C RISE TIME (tr} ps 0.204 06 12 COLLECTOR coRnENT (1p)A 925S-3I26R1 and 2N3585. PULSE DURATION * REPETITION RATE Todd PULSES/s COLLECTOR SUPPLY VOLTAGE (Wed) + 200 V CASE TEMPERATURE (Tc) 25 Tp,*Tag FALL THOME (t]s COLLECTOR CURRENT (Ig)A $2SS-H25Al Fig. 13 - Typical fall time vs. collector current for types 2N3584 and 2N9585. 164 . = ' 0704 AW13 Fig. 11 - Typical rise time vs. collector current for types 2N3584 _ Ot 17162 OD T-33-1!) | @ASE-TO-EMITTER VOLTAGE (Vgg)V 928-40 - Fig. 10 - Typical input characteristics for all types. Pulse ounaTion s20ps REPETI ATE 000 PULSE: COLLECTOR SUPPLY VOLTAGE tWigg)=200 v TEMPERATURE (Tc) * 25C re,Tee % 4 i COLLECTOR CURRENT (Ig]-A 9285-3:28R) and 2N3585. DURATION#20 4s RATE +1000 PULSES/ UA} Ig #0.0A TEMPERATURE ye25eC STORAGE TIME ( GOLLECTOR SUPPLY VOLTAGE Vco)-V 9208-19946 supply voltage for types 2N9584 and 2N3585, Fig. 12 - Typical storage time vs. collectorcurrentfortypes 2N3534 Fig. 14 - Typical rise time, fall time, and storage time vs. collector SOT 2 WERFL CLEEETIT Lari. aoe By de 3375081 0017163 oO i . 3875081 G E SOLID STATE ote 17163) op T7SSoI) __ High-Voltage Power Transistors 2N3583-2N3585, 2N4240 COLLECTOR-TO-EMITTER VOLTAGE (Voce) +10 V E 5 3 COLLECTOR CURRENT (Ic} mA 9255-3130 COLLECTOR CURRENT (I}mA | | fes8-H20 Fig. 15 - Typical dc beta vs. collector current for types 2N3683, and _- Fig. 16 - Typical dc beta vs. collector current for types 2N3584 and 2N4240. 2N3585. <= i Veer tw! CER TYPE i wencuiteneray 2N3583 s 1 L.No HGp-i004, 2N3SB4 CHANNEL A E { OR Equvacent | 2N3585 2 200] atten 374 Li (HOTE) 49 5 } HEWLETT-PACKARD g { OSCILLOSCOPE 5 i MODEL No. 1308, 5 bt OR EQUIVALENT Ww ous P: Z Qo Q 250 300 400 } t CHAMHIEL B 3 COLLECTOR-TO-EMITTER VOLTAGE (VogiV Bt Veggleusto. Svceniuslle, on 92S~12676A1 $s AA the \ j rl NOTE: The sustalning voitages Vcgolsus) and VeeRlsus) are acceptable when the trace falls to the right and above point A for types 2N3583 and 40374, point BY for type 2N3584, and point "C for types 2N3585 and 2N4240. 3 We +! 9 OHM a ev Lift = 0 10 50 NOTE: L) = 20 mH for VCEQ(sus) (500 mad =5mH_ for VCER(sus) Fig. 17 - Circuit used to measure sustaining voltages Vceo(sus)and Fig. 18 - Oscilloscope display for measurement of sustaining Vcen(sus) for all types. voltages. Ip, } Time I Se YH AYPUT WAVE FORM + BASE CURRENT 1 + Vee WNPUT FROM HP-2144 GENERATOR {ZG = 50 CHMS) OUTPUT TO OSCILLOSCOPE TYPE 2N3$84 Ee oN 2n3565 CONDITION ! t 90% Se ~ c . Be Vaa sa $2C5-1258581 1p, *T02 ge 0% TIME INPUT PULSE DURATION= 20 ps al tg at te te TURN-ON TURN-OFF TIME TIME . OUTPUT WAVE For 920S12074 Fig. 19 - Circultused to measure switching times fortypes2N3584 Fig. 20- Phase relationship between input and output currents, and 2N3585. showing referance points for specification of switching times. 165 ' , om