A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS (PER SIDE) MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 100 mA 30 V
BVCBO IC = 100 mA 60 V
BVEBO IE = 50 Ma 3.0 V
ICES VCE = 28 V 10 mA
hFE VCE = 5.0 V IC = 3.0 A 15 70 ---
COB VCB = 28 V f = 1.0 MHz 100 pF
POUT VCE = 28 V ICQ = 2 X 500 mA f = 860 MHz 150 W
GP VCE = 28 V ICQ = 2 X 250 mA f = 860 MHz
Pout = 50 W 6.5 dB
η
ηη
ηC VCE = 26.5 V Pout = 25 W f = 860 MHz
VISION = -8.0dB SOUND = -10 dB CHROMA = -16dB
-45 dBc
NPN SILICON RF POWER TRANSISTOR
SD1492-2
DESCRIPTION:
The ASI SD1492-2 is a Common
Emitter Device Designed for Class A
and AB Amplif ier Applications in
Television Band IV & V Tr ansm it ters.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
Internal Matching
MAXIMUM RATINGS
IC 25 A
VCBO 60 V
PDISS 300 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.55 °C/W
PACKAGE STYLE .450 BAL FLG.(A)