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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2012 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
July 2016
FPAM30LH60
PFC SPM® 2 Series for 2-Phase Interleaved PFC
Features
• UL Certified No.E209204 (UL1557)
• 600 V - 30 A 2-Phase Interleaved PFC with Integral
Gate Driver and Protection
• Very Low Thermal Resistance Using Al2O3 DBC Sub-
strate
• Full-Wave Bridge Rectifier and High-Performance
Output Diode
• Optimized for 20kHz Switching Frequency
• Built-in NTC Thermistor for Temperature Monitoring
• Isolation Rating: 2500 Vrms/min
Applications
• 2-Phase Interleaved PFC Converter
General Description
The FPAM30LH60 is a PFC SPM® 2 module providing a
fully-featured, high-performance Interleaved PFC (Power
Factor Correction) input power stage for consumer, med-
ical, and industrial applications. These modules inte-
grate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also provi ding multi-
ple on-module protection features incl uding under-volt-
age lockout, over-current shutdown, thermal monitoring,
and fault reporting. These modules also feature a full-
wave rectifier and high-performance output dio des for
additional space savings and mounting convenience.
Fig. 1. Package Overview
Package Marking and Ordering Information
Device Device Marking Package Packing Type Quantity
FPAM30LH60 FPAM30LH60 S32EA-032 Rail 8
©2012 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Integrated Drive, Protection and System Control Functions
• For IGBTs: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection
• Fault signal: corresponding to OC and UV fault
• Built-in thermistor: temperature monitoring
• Input interface : active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input
Pin Configuration
Figure 2. Top View
Case temperature(TC)
detecting point
(1)CSC
(2)COM
(3)VFO
(4)INX(5)INY
(6)COM
(7)n.c.
(8)VCC (9)VCC
(10)COM (11)RTH
(12)VTH
(13)NR
(14)NR
(15)n.c.
(16)n.c.
(17)n.c.
(18)R
(19)R
(20)n.c.
(21)n.c.
(22)S
(23)S
(32)PR
(31)NP
(30)Y
(29)X
(28)PX
(27)n.c.
(26)PY
(24)P
(25)P
Dime nsion u n it: millime te r
©2012 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Pin Descriptions
Internal Equivalent Circuit
Figure 3. Internal Block Diagram
Pin Number Pin Name Pin Description
1C
SC Signal Input for Over-Current Detection
2,6,10 COM Common Supply Ground
3V
FO Fault Output
4IN
XPWM Input for X IGBT Drive
5IN
YPWM Input for Y IGBT Drive
7 N.C No Connection
8,9 VCC Common Supply Voltage of IC for IGBT Drive
11 RTH Series Resistor for The Use of Thermistor
12 VTH Thermistor Bias Voltage
13,14 NRNegative DC-Link of Rectifier Diode
15,16,17 N.C No Connection
18,19 R AC Input for R-Phase
20,21 N.C No Connection
22,23 S AC Input for S-Phase
24,25 P Output of Diode
26 PYInput of Diode
27 N.C No Connection
28 PXInput of Diode
29 X Output of X Phase IGBT
30 Y Output of Y Phase IGBT
31 NPNegative DC-Link of IGBT
32 PRPositive DC-Link of Rectifier Diode
CSC
VFO
INY
COM
VCC
OUT X
(1)CSC
(2)(6)(10)
COM
(24)(25)P
(22)(23)S
(32)PR
OUT Y
INX
(8)(9)VCC
(3)VFO
(4)INX
(5)INY
(31)NP
(30)Y
(29)X
(18)(19)R
(13)(14)NR
(11)RTH
(12)VTH THERMISTOR (26)PY
(28)PX
©2012 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Converter Part
1st Notes:
1. The maximum junction temperature rating of the power chips integrated within the PFC SPM® product is 125°C.
2. Marking “ * “ is calculation value or design factor.
Control Part
Total System
Thermal Resistan ce
Symbol Parameter Conditions Rating Unit
ViInput Supply Voltage Applied between R - S 264 Vrms
VPN Output Voltage Applied between X - NP, Y - NP, P - PX, P - PY 450 V
VPN(Surge) Output Supply Voltage (Surge) Applied between X - NP, Y - NP, P - PX, P - PY 500 V
VCES Collector-emitter Voltage Breakdown Voltage between X - NP, Y - NP600 V
VRRM Repetitive Peak Reverse Voltage of FRD Breakdown Voltage between P - PX, P - PY600 V
VRRMR Repetitive Peak Reverse Voltage of Rec-
tifier Breakdown Voltage between PR - R, PR - S,
R - NR, S - NR
900 V
*IFFRD Forward Current TC = 25°C, TJ < 125°C 30 A
*IFSM Peak Surge Current of FRD Non-Repetitive, 60 Hz Single Half-Sine Wave 300 A
*IFR Rectified Forward Current TC = 25°C, TJ < 125°C 30 A
*IFSMR Peak Surge Current of Rectifier Non-Repetitive, 60 Hz Single Half-Sine Wave 300 A
± *ICEach IGBT Collector Current TC = 25°C, TJ < 125°C 30 A
± *ICP Each IGBT Collector Current(Peak) TC = 25°C, TJ < 125°C,
Under 1 ms Pulse Width 60 A
*PCCollector Dissipation TC = 25°C per IGBT 107 W
TJOperating Junction Temperature (1st Note 1) -40 ~ 125 °C
Symbol Parameter Conditions Rating Unit
VCC Control Supply Voltage Applied between VCC - COM 20 V
VIN Input Signal Voltage Applied between INX, INY - COM -0.3 ~ VCC + 0.3 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V
IFO Fault Output Current Sink Current at VFO Pin 1 mA
VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC + 0.3 V
Symbol Parameter Conditions Rating Unit
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat-Sink Plate 2500 Vrms
Symbol Parameter Condition Min. Typ. Max. Unit
Rth(j-c)Q Junction to Case Thermal
Resistance Each IGBT under Operating Condition - - 0.93 °C/W
Rth(j-c)D Each Diode under Operating Condition - - 1.42 °C/W
Rth(j-c)R Each Rectifier under Operating Condition - - 0.74 °C/W
©2012 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Converter Part
1st Notes:
3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switchin g time of IGBT itself under th e given gate dri ving conditio n internally. For
the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Parameter Conditions Min. Typ. Max. Unit
VCE(SAT) IGBT Saturation Voltage VCC = 15 V, VIN = 5 V, IC = 30 A - 1.7 2.2 V
VFF FRD Forward Voltage IF = 30 A - 1.9 2.4 V
VFR Rectifier Forward Voltage IFR = 30 A - 1.10 1.25 V
IRR Switching Characteristic VPN = 400 V, VCC = 15 V, IC = 15 A,
VIN = 0 V 5 V, Inductive Load (1st Note 3),
per IGBT
-11- A
tRR -41- ns
tON - 700 - ns
tOFF - 852 - ns
tC(ON) - 104 - ns
tC(OFF) - 102 - ns
ICES Collector - Emitter
Leakage Current VCES = 600 V - - 250 A
VCE IC
VIN
tON tC(ON)
10% IC10% VCE
90% IC
tOFF tC(OFF)
10% VCE
10% IC
(a) turn-on (b) turn-o ff
IRR
tRR
100% IC100% IC
©2012 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Control Part
1st Notes:
4. TTH is the temperature of thermister itself. To know case temperature ( TC), please make the expe riment considering your application.
Figure 5. R-T Curve of The Built-in Thermistor
Symbol Parameter Conditions Min. Typ. Max. Unit
IQCC Quiescent VCC Supply
Current VCC = 15 V, INX, INY - COM = 0 V, Supply current
between VCC and COM - - 2.65 mA
IPCC Operating VCC Supply
Current VCC = 15 V, fPWM = 20 kHz, Duty = 50%
Applied to One PWM Signal Input per IGBT
Supply Current between VCC and COM
--6.0mA
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 10 k to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 10 k to 5 V Pull-up - - 0.5 V
VSC(Ref) Over-Current Protection Trip
Level Voltage of CSC Pin VCC = 15 V 0.45 0.50 0.55 V
UVCCD Supply Circuit Under-
Voltage Protection Detection Level 10.5 - 13.0 V
UVCCR Reset Level 11.0 - 13.5 V
tFOD Fault-Out Pulse Width 30 - - s
VIN(ON) ON Threshold Voltage Applied between INX, INY - COM 2.6 - - V
VIN(OFF) OFF Threshold Voltage Applied between INX, INY - COM - - 0.8 V
RTH Resistance of Thermistor at TTH = 25°C (1st Note 4, Figure 5) -47-k
at TTH = 100°C (1st Note 4, Figure 5) -2.9-k
0255075100125
0
50
100
150
200 R-T Curve
Resistance RTH[k]
Tem perature TTH[oC]
95 100 105 110 115 120 125
1
2
3
4
Resistance R TH[k]
Temperature TTH[oC]
©2012 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Recommended Operating Conditions (TJ = 25°C, unless otherwise specified.)
Mechanical Characteristics and Ratings
Figure 6. Flatness Measurement Position
Symbol Parameter Conditions Min. Typ. Max. Unit
ViInput Supply Voltage Applied between R - S 187 - 253 Vrms
IiInput Current TC < 100°C, Vi = 220 V, VO = 360 V,
fPWM = 20 kHz per IGBT --21A
rms
VPN Supply Voltage Applied between X - NP, Y - NP, P - PX, P - PY- - 400 V
VCC Control Supply Voltage Applied between VCC - COM 13.5 15.0 16.5 V
dVCC/dt Supply Variation -1 - 1 V / s
IFO Fault Output Current Sink Current at VFO Pin - - 1 mA
fPWM PWM Input Frequency -40°C < TJ < 125°C per IGBT - 20 - kHz
Parameter Conditions Min. Typ. Max. Unit
Mounting Torque Mounting Screw: M4 Recommended 0.98 N•m 0.78 0.98 1.17 N•m
Recommended 10 kg•cm 8 10 12 kg•cm
Device Flatness See Figure 6 0 - +150 m
Weight -32- g
©2012 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Time Charts of Protective Function
a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when the next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 7. Under-Voltage Protection
(with the external over current detection circuit)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Over-current detection (OC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts.
c6 : Input “LOW”: IGBT OFF state.
c7 : Input “HIGH”: IGBT ON state, but du rin g the active period
of fault output the IGBT doesn’t turn ON.
c8 : IGBT OFF state.
Figure 8. Over-Current Protection
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVCCR
Protection
Circuit State SET RESET
UVCCD
a1 a3
a2 a4
a6
a5
a7
In te rn al IGB T
Ga te -Emitte r Vo lta g e
Input Voltage (V IN)
Output Current
Fault O utput Signal
OC
Input signal to CS C
pin for Protection SET RESET
c6 c7
c3
c2
c1
c8
c4
c5
©2012 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Figure 9. Typical Application Circuit
2nd Notes:
1. To avoid malfunction, the wiring of each input should be as short as possible(less than 2 ~ 3 cm).
2. VFO output is open-drain type. This signal l i ne should be pulled up to the positive-side of the MCU or control power supply with a resistor that makes IFO up to 1 mA.
3. Input signal is active-HIGH type. There is a 5 kΩ resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RFCF constant should be selec ted in the range 50~150ns(recommen ded RF = 100 Ω , CF = 1 nF).
4. To prevent error of the protection function, the wiring related with RSCF and CSCF should be as short as possible.
5. In the over current protection circui t, please selec t the RSCF , CSCF time constant in the range 1.5 ~ 2 μs.
6. Each capacitors should be mounted as close to the PFC SPM® product pins as possible.
7. Relays are used at almost ever y systems of electrical equipment s of home a ppliances. In these cases, there sho uld be suff icient distance between the MCU / controller and the
relays.
8. Internal NTC thermist or can be us ed for mon itoring o f the case te mperatur e and pro tecting t he device fr om the overh eating ope ration . Select a n approp riate re sistor R T accord-
ing to the application.
9. It is recommended that anti-parallel diode(DX ,DY) be connected with each IGBT.
MCU /
Controller
+5 V
+15 V
+5 V
Input signal for over
current protection
CSCF
RSCF
VDC
RFO
LL
CSC
VFO
INY
VCC
COM
OUT X
P
S
PR
OUT Y
INX
NP
X
Y
R
PX
PY
NR
RTH
VTH THERMISTOR
Current sensing
VAC
DYDX
RF
RF
CF
CF
RT
©2012 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
Detailed Package Outline Drawings
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
https://www.fairchildsemi.com/package-drawings/MO/MOD32BA.pdf
©2012 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FPAM30LH60 Rev. 1.5
FPAM30LH60 PFC SPM® 2 Series for 2-Phase Interleaved PFC
®
®
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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