Vishay General Semiconductor
BYM07-50 thru BYM07-400, EGL34A thru EGL34G
Document Number 88580
30-Jun-06
www.vishay.com
1
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters and
inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-213AA, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
DO-213AA (GL34)
*Glass-plastic encapsulation
is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
Patented*
®
MAJOR RATINGS AND CHARACTERISTICS
IF(AV) 0.5 A
VRRM 50 V to 400 V
IFSM 10 A
trr 50 ns
VF1.25 V, 1.35 V
Tj max. 175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYM07-50 BYM07-100 BYM07-150 BYM07-200 BYM07-300 BYM07-400 UNIT
Fast efficient device: 1st band is Green EGL34A EGL34B EGL34C EGL34D EGL34F EGL34G
Polarity color bands (2nd Band) Gray Red Pink Orange Brown Yellow
Maximum repetitive peak
reverse voltage VRRM 50 100 150 200 300 400 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 V
Maximum average forward rectified
current at TT = 75 °C IF(AV) 0.5 A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load
IFSM 10 A
Maximum full load reverse current, full
cycle average at TA = 55 °C IR(AV) 50 µA
Operating junction and storage
temperature range TJ, TSTG - 65 to + 175 °C