BZX585-C33,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2004 Mar 26

2004 Jun 22

DISCRETE SEMICONDUCTORS

BZX585 series

Voltage regulator diodes

M3D319

2004 Jun 22 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

FEATURES

•Total power dissipation: max. 300 mW

•Two tolerance series: ± 2 % and ± 5 %

•Working voltage range: nominal 2.4 V to 75 V

(E24 range)

•Non-repeti tive pea k reverse power dissipat ion: max.

40 W.

APPLICATIONS

•General regulation functions.

DESCRIPTION

Low-power vo ltage regulator diodes encapsulated in an

ultra small SOD523 plastic SMD package.

The diodes are availabl e in the normalized E24 ± 2 %

(BZX585-B) and ± 5 % (BZX585-C) tolerance range.

The series consists of 37 types with nominal working

voltages fro m 2.4 V to 75 V.

PINNING

PIN DESCRIPTION

1cathode

2anode

handbook, halfpage

;

Top view

MAM387

Fig.1 Simplified outline (SO D5 23) and symbol.

The marking bar indicates the cathode.

MARKING

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

Marking codes for BZX585-B2V4 to BZX585-B75

BZX585-B2V4 C1 BZX585-B6V2 E1 BZX585-B16 EA BZX585-B43 EM

BZX585-B2V7 C2 BZX585-B6V8 E2 BZX585-B18 EB BZX585-B47 EN

BZX585-B3V0 C3 BZX585-B7V5 E3 BZX585-B20 EC BZX585-B51 EP

BZX585-B3V3 C4 BZX585-B8V2 E4 BZX585-B22 ED BZX585-B56 ER

BZX585-B3V6 C5 BZX585-B9V1 E5 BZX585-B24 EE BZX585-B62 ES

BZX585-B3V9 C6 BZX585-B10 E6 BZX585-B27 EF BZX585-B68 ET

BZX585-B4V3 C7 BZX585-B11 E7 BZX585-B30 EG BZX585-B75 EU

BZX585-B4V7 C8 BZX585-B12 E8 BZX585-B33 EH

BZX585-B5V1 C9 BZX585-B13 E9 BZX585-B36 EK

BZX585-B5V6 C0 BZX585-B15 E0 BZX585-B39 EL

2004 Jun 22 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX585 series

ORDERING INFORMATION

LIMITING VALUES

In accordance with th e A b solute Maxi mum Rating System (IEC 60134).

Note

1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.

Marking codes for BZX585-C2V4 to BZX585-C75

BZX585-C2V4 F1 BZX585-C6V2 H1 BZX585-C16 HA BZX585-C43 HM

BZX585-C2V7 F2 BZX585-C6V8 H2 BZX585-C18 HB BZX585-C47 HN

BZX585-C3V0 F3 BZX585-C7V5 H3 BZX585-C20 HC BZX585-C51 HP

BZX585-C3V3 F4 BZX585-C8V2 H4 BZX585-C22 HD BZX585-C56 HR

BZX585-C3V6 F5 BZX585-C9V1 H5 BZX585-C24 HE BZX585-C62 HS

BZX585-C3V9 F6 BZX585-C10 H6 BZX585-C27 HF BZX585-C68 HT

BZX585-C4V3 F7 BZX585-C11 H7 BZX585-C30 HG BZX585-C75 HU

BZX585-C4V7 F8 BZX585-C12 H8 BZX585-C33 HH

BZX585-C5V1 F9 BZX585-C13 H9 BZX585-C36 HK

BZX585-C5V6 F0 BZX585-C15 H0 BZX585-C39 HL

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BZX585-B2V4

BZX585-B75

−Plastic surfa ce moun ted package; 2 leads SOD523

BZX585-C2V4

BZX585-C75

−Plastic surfa ce moun ted package; 2 leads SOD523

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −200 mA

IZSM non-repe titiv e pe ak reverse

current tp = 100 μs; square wave;

Tamb = 25 °C prior to surg e see Tables 1 and 2

PZSM non-repe titiv e pe ak reverse

power dissipation tp = 100 μs; square wave;

Tamb = 25 °C prior to surg e −40 W

Ptot total power dissipation Tamb = 25 °C; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −65 +150 °C

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

2004 Jun 22 4

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX585 series

ELECTRICAL CHARACTERISTIC S

Total BZX585-B and C series

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.2 0.9 V

IF = 100 mA; see Fig.2 1.1 V

IRreverse current

BZX585-B/C2V4 VR = 1 V 50 μA

BZX585-B/C2V7 VR = 1 V 20 μA

BZX585-B/C3V0 VR = 1 V 10 μA

BZX585-B/C3V3 VR = 1 V 5 μA

BZX585-B/C3V6 VR = 1 V 5 μA

BZX585-B/C3V9 VR = 1 V 3 μA

BZX585-B/C4V3 VR = 1 V 3 μA

BZX585-B/C4V7 VR = 2 V 3 μA

BZX585-B/C5V1 VR = 2 V 2 μA

BZX585-B/C5V6 VR = 2 V 1 μA

BZX585-B/C6V2 VR = 4 V 3 μA

BZX585-B/C6V8 VR = 4 V 2 μA

BZX585-B/C7V5 VR = 5 V 1 μA

BZX585-B/C8V2 VR = 5 V 700 nA

BZX585-B/C9V1 VR = 6 V 500 nA

BZX585-B/C10 VR = 7 V 200 nA

BZX585-B/C11 VR = 8 V 100 nA

BZX585-B/C12 VR = 8 V 100 nA

BZX585-B/C13 VR = 8 V 100 nA

BZX585-B/C15 to 75 VR = 0.7VZnom 50 nA

2004 Jun 22 5

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

Table 1 Per type BZX585-B/C2V4 to B/C24

Tamb = 25 °C unle ss otherwise spe cified .

BZX585-

B or C

XXX

WORKING VOLTAGE

VZ (V)

at IZtest = 5 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 5 mA

(see figs 3 AND 4)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp = 100 μs

Tol. ± 2% (B) Tol. ± 5% (C) at IZtest = 1 mA at IZtest = 5 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

2V4 2.35 2.45 2.28 2.52 275 400 70 100 −1.3 450 6.0

2V7 2.65 2.75 2.57 2.84 300 450 75 100 −1.4 440 6.0

3V0 2.94 3.06 2.85 3.15 325 500 80 95 −1.6 425 6.0

3V3 3.23 3.37 3.14 3.47 350 500 85 95 −1.8 410 6.0

3V6 3.53 3.67 3.42 3.78 375 500 85 90 −1.9 390 6.0

3V9 3.82 3.98 3.71 4.10 400 500 85 90 −1.9 370 6.0

4V3 4.21 4.39 4.09 4.52 410 600 80 90 −1.7 350 6.0

4V7 4.61 4.79 4.47 4.94 425 500 50 80 −1.2 325 6.0

5V1 5.00 5.20 4.85 5.36 400 480 40 60 −0.5 300 6.0

5V6 5.49 5.71 5.32 5.88 80 400 15 40 1.0 275 6.0

6V2 6.08 6.32 5.89 6.51 40 150 610 2.2 250 6.0

6V8 6.66 6.94 6.46 7.14 30 80 615 3.0 215 6.0

7V5 7.35 7.65 7.13 7.88 15 80 210 3.6 170 4.0

8V2 8.04 8.36 7.79 8.61 20 80 210 4.3 150 4.0

9V1 8.92 9.28 8.65 9.56 20 100 210 5.2 120 3.0

10 9.80 10.20 9.50 10.50 20 150 210 6.0 110 3.0

11 10.78 11.22 10.45 11.55 25 150 210 6.9 110 2.5

12 11.76 12.24 11.40 12.60 25 150 210 7.9 105 2.5

13 12.74 13.26 12.35 13.65 25 170 210 8.8 105 2.5

15 14.70 15.30 14.25 15.75 25 200 315 10.7 100 2.0

16 15.68 16.32 15.20 16.80 50 200 10 40 12.4 90 1.5

18 17.64 18.36 17.10 18.90 50 225 10 45 14.4 80 1.5

20 19.60 20.40 19.00 21.00 60 225 15 55 16.4 70 1.5

22 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25

24 23.52 24.48 22.80 25.20 60 250 25 70 20.4 55 1.25

2004 Jun 22 6

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX585 series

Table 2 Per type BZX585-B/C27 to B/C75

Tamb = 25 °C unle ss otherwise spe cified .

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.

2. Solder point at cathode tab.

BZX585-

B or C

XXX

WORKING VOLTAGE

VZ (V)

at IZtest = 2 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 2 mA

(see figs 3 and 4)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE

PEAK REVERSE

CURRENT

IZSM (A) at tp = 100 μs

Tol. ± 2 % (B) Tol. ± 5 % (C) at IZtest = 0.5 mA at IZtest = 2 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

27 26.46 27.54 25.65 28.35 65 300 25 80 23.4 50 1.0

30 29.40 30.60 28.50 31.50 70 300 30 80 26.6 50 1.0

33 32.34 33.66 31.35 34.65 75 325 35 80 29.7 45 0.9

36 35.28 36.72 34.20 37.80 80 350 35 90 33.0 45 0.8

39 38.22 39.78 37.05 40.95 80 350 40 130 36.4 45 0.7

43 42.14 43.86 40.85 45.15 85 375 45 150 41.2 40 0.6

47 46.06 47.94 44.65 49.35 85 375 50 170 46.1 40 0.5

51 49.98 52.02 48.45 53.55 90 400 60 180 51.0 40 0.4

56 54.88 57.12 53.20 58.80 100 425 70 200 57.0 40 0.3

62 60.76 63.24 58.90 65.10 120 450 80 215 64.4 35 0.3

68 66.64 69.36 64.60 71.40 150 475 90 240 71.7 35 0.25

75 73.50 76.50 71.25 78.75 170 500 95 255 80.2 35 0.2

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 350 K/W

Rth(j-s) thermal resistance from junction to solder point note 2 65 K/W

2004 Jun 22 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX585 series

GRAPHICAL DATA

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Fig.2 Forward current as a function of forward

voltage; typical values.

Tamb = 25 °C.

handbook, halfpage

0.5

−2

−1

MLD444

1IZ (mA)

(mV/K)

−1.5

−1

−0.5

2V4

4V7

4V3

3V9

3V6

3V3

3V0

2V7

Fig.3 Temperature coefficient as a funct ion of

working current; typical values.

BZX585-B/C2V4 to B/C4V7.

Tamb = 25 °C to 150 °C.

handbook, halfpage

−4

MLD445

10−1110

IZ (mA)

(mV/K)

102

9V1

5V6

5V1

8V2

7V5

6V8

6V2

Fig.4 Temperature coefficient as a funct ion of

working current; typical values.

BZX585-B/C5V1 to B/C15.

Tamb = 25 °C to 150 °C.

2004 Jun 22 8

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX585 series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD523 SC-79 02-12-13

06-03-16

lastic surface-mounted package; 2 leads SOD52

0 0.5 1 mm

scale

Ebp

vMA

UNIT bpcDEv

DIMENSIONS (mm are the original dimensions)

Note

1. The marking bar indicates the cathode.

(1) 0.34

0.26 0.17

0.11 0.1

0.85

0.75

1.25

1.15

0.65

0.58 1.65

1.55

2004 Jun 22 9

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX585 series

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the pr oduct specification.

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Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R76/04/pp10 Date of release: 2004 Jun 22 Document order nu mber: 9397 750 13303