CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Built-in strain rellef
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
Trr ns
Cj pF
T
JO
C
T
STG O
C
Document Number: DS_D1405052 Version:J14
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AC (SMA) DO-214AC (SMA)
ES1A thru ES1J
Taiwan Semiconductor
Surface Mount Su
p
er Fast Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL ES
1A
ES
1B
ES
1C
ES
1D
ES
1F
ES
1G
ES
1H
ES
1J UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
18
O
C/W
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
30
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=100℃I
R
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A V
F
V
35
Operating junction temperature range
Storage temperature range - 55 to +150
- 55 to +150
Typical junction capacitance (Note 3)
Typical thermal resistance R
θJL
R
θJA
35
85
16
μA
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied V
R
=4.0 Volts
Note 1: Pulse test with PW=300μs, 1% duty cycle
0.95 1.3 1.7
5
100
Maximum reverse recovery time (Note 2)
PART NO.
PART NO.
ES1J
ES1J
ES1J
(TA=25℃ unless otherwise noted)
Document Number: DS_D1405052 Version:J14
ES1A thru ES1J
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING
CODE
GREEN COMPOUND
CODE
PACKAGE PACKING
ES1x
(Note 1)
Prefix "H"
R3
Suffix "G"
SMA 1,800 / 7" Plastic reel
R2 SMA 7,500 / 13" Paper reel
M2 SMA 7,500 / 13" Plastic reel
F3 Folded SMA 1,800 / 7" Plastic reel
F2 Folded SMA 7,500 / 13" Paper reel
F4 Folded SMA 7,500 / 13" Plastic reel
N/A E3 Clip SMA 1,800 / 7" Plastic reel
E2 Clip SMA 7,500 / 13" Plastic reel
Note 1: "x" defines voltage from 50V (ES1A) to 600V (ES1J)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
ES1J R3 R3
ES1J R3G R3 G Green compound
ES1JHR3 H R3 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
0.2
0.4
0.6
0.8
1
1.2
80 90 100 110 120 130 140 150
AVERAGE FORWARD A
CURRENT (A)
LEAD TEMPERATURE (oC)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
RESISTER OR
INDUCTIVE LOAD
0
5
10
15
20
25
30
1 10 100
PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD PEAK
SURGE CURRENT
8.3mS Single Half Sine Wave
(JEDEC Method)
0.01
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT
(μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TJ=25℃
TJ=125℃
TJ=75℃
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 2 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
ES1H-1J
Pulse Width=300μs
1% Duty Cycle
ES1F-1G
ES1A-D
Min Max Min Max
A 1.27 1.58 0.050 0.062
B 4.06 4.60 0.160 0.181
C 2.29 2.83 0.090 0.111
D 1.99 2.50 0.078 0.098
E 0.90 1.41 0.035 0.056
F 4.95 5.33 0.195 0.210
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1405052 Version:J14
ES1A thru ES1J
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
SUGG ESTED PAD LAYOUT
Symbol Unit (mm)
A1.68
B1.52
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
C3.93
D2.41
E5.45
1
10
100
0.1 1 10 100
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
ES1A-D
ES1F-J
f=1.0MHz
Vsig=50mVp-p
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405052 Version:J14
ES1A thru ES1J
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
