HAL300
Differential Hall Effect
Sensor IC
Edition April 23, 2004
6251-345-2DS
DATA SHEET
MICRONAS
MICRONAS
HAL300 DATA SHEET
2 Micronas
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
3 1.2. Marking Code
3 1.2.1. Special Marking of Prototype Parts
3 1.3. Operating Junction Temperature Range
4 1.4. Hall Sensor Package Codes
4 1.5. Solderability
4 1.6. Pin Connections
5 2. Functional Description
6 3. Specifications
6 3.1. Outline Dimensions
11 3.2. Dimensions of Sensitive Area
11 3.3. Positions of Sensitive Areas
11 3.4. Absolute Maximum Ratings
11 3.4.1. Storage and Shelf Life
12 3.5. Recommended Operating Conditions
13 3.6. Characteristics
14 3.7. Magnetic Characteristics
19 4. Application Notes
19 4.1. Ambient Temperature
19 4.2. Extended Operating Conditions
19 4.3. Start-up Behavior
20 4.4. EMC and ESD
22 5. Data Sheet History
HAL300
DATA SHEET
3Micronas
Differential Hall Effect Sensor IC
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL300 is a differential Hall switch produced in
CMOS technology. The sensor includes 2 temperature-
compensated Hall plates (2.05 mm apart) with active off-
set compensation, a differential amplifier with a Schmitt
trigger, and an open-drain output transistor (see Fig.
2–1).
The HAL300 is a differential sensor which responds to
spatial differences of the magnetic field. The Hall volt-
ages at the two Hall plates, S1 and S2, are amplified with
a differential amplifier. The differential signal is
compared with the actual switching level of the internal
Schmitt trigger. Accordingly, the output transistor is
switched on or off.
The sensor has a bipolar switching behavior and re-
quires positive and negative values of ∆B = BS1 – BS2 for
correct operation.
The HAL300 is an ideal sensor for applications with a ro-
tating multi-pole-ring in front of the branded side of the
package (see Fig. 3–1, Fig. 3–2 and Fig. 3–3), such as
ignition timing and revolution counting.
For applications in which a magnet is mounted on the
back side of the package (back-biased applications), the
HAL320 is recommended.
The active offset compensation leads to constant mag-
netic characteristics over supply voltage and tempera-
ture.
The sensor is designed for industrial and automotive ap-
plications and operates with supply voltages from 4.5 V
to 24 V in the ambient temperature range from –40 °C
up to 150 °C.
The HAL300 is available in the SMD-package
SOT89B-2 and in the leaded versions TO92UA-3 and
TO92UA-4.
1.1. Features:
– distance between Hall plates: 2.05 mm
– operates from 4.5 V to 24 V supply voltage
– switching offset compensation at 62 kHz
– overvoltage protection
– reverse-voltage protection at VDD-pin
– short-circuit protected open-drain output by thermal
shutdown
– operates with magnetic fields from DC to 10 kHz
– output turns low with magnetic south pole on branded
side of package and with a higher magnetic flux densi-
ty in sensitive area S1 as in S2
– on-chip temperature compensation circuitry mini-
mizes shifts of the magnetic parameters over temper-
ature and supply voltage range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of hystere-
sis
– EMC corresponding to ISO 7637
1.2. Marking Code
Type Temperature Range
A K
HAL300 300A 300K
1.2.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath the
temperature range letter on each IC. They may be used
for lab experiments and design-ins but are not intended to
be used for qualification tests or as production parts.
1.3. Operating Junction Temperature Range (TJ)
A: TJ = –40 °C to +170 °C
K: TJ = –40 °C to +140 °C
The relationship between ambient temperature (TA) and
junction temperature (TJ) is explained in section 4.1. on
page 19.
HAL300 DATA SHEET
4 Micronas
1.4. Hall Sensor Package Codes
Type: 300
HALXXXPA-T
Temperature Range: A or K
Package: SF for SOT89B-2,
UA for TO92UA
→ Type: 300
→ Package: TO92UA
→ Temperature Range: TJ = –40 °C to +140 °C
Example: HAL300UA-K
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Hall Sensors: Ordering
Codes, Packaging, Handling”.
1.5. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual rework-
ing, a component body temperature of 260 °C should not
be exceeded.
1.6. Pin Connections
OUT
GND
3
2
1VDD
Fig. 1–1: Pin configuration
HAL300
DATA SHEET
5Micronas
2. Functional Description
This Hall effect sensor is a monolithic integrated circuit
with 2 Hall plates 2.05 mm apart that switches in re-
sponse to differential magnetic fields. If magnetic fields
with flux lines perpendicular to the sensitive areas are
applied to the sensor, the biased Hall plates force Hall
voltages proportional to these fields. The difference of
the Hall voltages is compared with the actual threshold
level in the comparator. The temperature-dependent
bias increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the differential
magnetic field exceeds the threshold levels, the open
drain output switches to the appropriate state. The built-
in hysteresis eliminates oscillation and provides switch-
ing behavior of the output without oscillation.
Magnetic offset caused by mechanical stress at the Hall
plates is compensated for by using the “switching offset
compensation technique”: An internal oscillator pro-
vides a two phase clock (see Fig. 2–2). The difference
of the Hall voltages is sampled at the end of the first
phase. At the end of the second phase, both sampled
differential Hall voltages are averaged and compared
with the actual switching point. Subsequently, the open
drain output switches to the appropriate state. The
amount of time that elapses from crossing the magnetic
switch level to the actual switching of the output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-Pin and VDD-Pin together with external series re-
sistors. Reverse current is limited at the VDD-Pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the VDD-Pin for values
ranging from 0 V to –15 V.
HAL300
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator
Output
VDD
1
OUT
3
Clock
GND
2
Fig. 2–1: HAL300 block diagram
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
Hall Plate
S1
Hall Plate
S2
t
VOL
VOUT
1/fosc = 16 µs
Fig. 2–2: Timing diagram
VOH
DB
DBON
fosc
t
t
tft
IDD
t
HAL300 DATA SHEET
6 Micronas
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas
Weight approximately 0.039 g
HAL300
DATA SHEET
7Micronas
Fig. 3–2:
TO92UA-4: Plastic Transistor Standard UA package, 3 leads, not spread, with two sensitive areas
Weight approximately 0.105 g
HAL300 DATA SHEET
8 Micronas
Fig. 3–3:
TO92UA-3: Plastic Transistor Standard UA package, 3 leads, spread, with two sensitive areas
Weight approximately 0.105 g
HAL300
DATA SHEET
9Micronas
Fig. 3–4:
TO92UA-4: Dimensions ammopack inline, not spread
HAL300 DATA SHEET
10 Micronas
Fig. 3–5:
TO92UA-3: Dimensions ammopack inline, spread
HAL300
DATA SHEET
11Micronas
3.2. Dimensions of Sensitive Area
0.08 mm x 0.17 mm
3.3. Positions of Sensitive Areas (nominal values)
SOT89B-2 TO92UA-3/-4
x1 = −1.025 mm
x2 = 1.025 mm
x1 − x2 = 2.05 mm
y = 0.95 mm y = 1.0 mm
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute
maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol Parameter Pin No. Limit Values Unit
Min. Max.
VDD Supply Voltage 1 –15 281) V
VOOutput Voltage 3 –0.3 281) V
IOContinuous Output On Current 3 – 30 mA
TJJunction Temperature Range –40
–40
150
1702) °C
1) as long as TJmax is not exceeded
2) t < 1000h
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing
the devices for 16 hours at 155 °C. The wettability was more than 95%.
HAL300 DATA SHEET
12 Micronas
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specifi-
cation is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol Parameter Pin No. Limit Values Unit
Min. Max.
VDD Supply Voltage 1 4.5 24 V
IOContinuous Output On Current 3 – 20 mA
VOOutput Voltage 3 – 24 V
HAL300
DATA SHEET
13Micronas
3.6. Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol Parameter Pin No. Limit Values Unit Conditions
Min. Typ. Max.
IDD Supply Current 1 4.0 5.5 6.8 mA TJ = 25 °C
IDD Supply Current over
Temperature Range 1 2.5 5 7.5 mA
VDDZ Overvoltage Protection
at Supply 1 – 28.5 32.5 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ Overvoltage Protection at Output 3 – 28 32.5 V IOL = 25 mA, TJ = 25 °C,
t = 20 ms
VOL Output Voltage over
Temperature Range 3 – 180 400 mV IO = 20 mA
IOH Output Leakage Current over
Temperature Range 3 – 0.06 10 µA VOH = 4.5 V...24 V,
DB < DBOFF , TJ ≤ 150 °C
fosc Internal Oscillator
Chopper Frequency – – 62 – kHz
ten(O) Enable Time of Output
after Setting of VDD
3 – 35 – µsVDD = 12 V,
DB > DBON + 2mT or
DB < DBOFF – 2mT
trOutput Rise Time 3 – 80 400 ns VDD = 12 V, RL = 820 Ω,
CL = 20 pF
tfOutput Fall Time 3 – 45 400 ns VDD = 12 V, RL = 820 Ω,
CL = 20 pF
RthJSB
case
SOT89B-2
Thermal Resistance Junction to
Substrate Backside – 150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size see Fig. 3–7
RthJS
case
TO92UA-3,
TO92UA-4
Thermal Resistance
Junction to Soldering Point – 150 200 K/W
HAL300 DATA SHEET
14 Micronas
3.7. Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points (Condition: –10 mT < B0 < 10 mT)
Positive flux density values refer to the magnetic south pole at the branded side ot the package. ∆B = BS1 – BS2
Parameter –40 °C 25 °C 140 °C 170 °C Unit
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
On point ∆BON
∆B > ∆BON
0.2 1.2 2.2 01.2 2.2 –1.8 0.6 2.8 –2.0 0.5 3.0 mT
Off point ∆BOFF
∆B < ∆BOFF
–2.2 –1.0 –0.2 –2.2 –1.0 0 –2.8 –1.2 1.8 –3.0 –1.2 2.0 mT
Hysteresis
∆BHYS = ∆BON – ∆BOFF
1.2 2.2 3.0 1.2 2.2 3.0 0.9 1.8 3.0 0.8 1.7 3.0 mT
Offset ∆BOFFSET =
(∆BON + ∆BOFF)/2 –1.1 0.1 1.1 –1.1 0.1 1.1 –2.2 –0.3 2.2 –2.5 –0.5 2.5 mT
DBOFF min DBON max
DBHYS
Output Voltage
Fig. 3–6: Definition of switching points and hysteresis
0
DBOFF DBON
∆B = BS1 – BS2
VOH
VOL
Fig. 3–7: Recommended pad size SOT89B-2
Dimensions in mm
5.0
2.0
2.0
1.0
HAL300
DATA SHEET
15Micronas
–2.5
–2.0
–1.5
–1.0
–0.5
0.0
0.5
1.0
1.5
2.0
2.5
0 5 10 15 20 25 30
mT
VDD
V
DBON
DBOFF
TA = 25 °C
TA = –40 °C
TA = 150 °C
DBON
DBOFF
Fig. 3–8: Typical magnetic switch points
versus supply voltage
–2.5
–2.0
–1.5
–1.0
–0.5
0.0
0.5
1.0
1.5
2.0
2.5
3 3.5 4.0 4.5 5.0 5.5 6.0
mT
VDD
V
DBON
DBOFF DBON
DBOFF
TA = 25 °C
TA = –40 °C
TA = 150 °C
Fig. 3–9: Typical magnetic switch points
versus supply voltage
–2.5
–2.0
–1.5
–1.0
–0.5
0.0
0.5
1.0
1.5
2.0
2.5
–50 0 50 100 150 200
mT
TA
°C
DBON
DBOFF
VDD = 4.5 V
DBON
DBOFF
VDD = 12 V
VDD = 24 V
Fig. 3–10: Typical magnetic switch points
versus ambient temperature
–15
–10
–5
0
5
10
15
20
–15 –10 –5 0 5 10 15 20 25 30 V
mA
VDD
IDD
25
TA = 25 °C
TA = –40 °C
TA = 150 °C
Fig. 3–11: Typical supply current
versus supply voltage
HAL300 DATA SHEET
16 Micronas
0
1
2
3
4
5
6
7
12345678
V
mA
VDD
IDD
TA = –40 °C
TA = 25 °C
TA = 150 °C
Fig. 3–12: Typical supply current
versus supply voltage
0
1
2
3
4
5
6
7
–50 0 50 100 150 200 °C
mA
TA
IDD
VDD = 24 V
VDD = 12 V
VDD = 4.5 V
Fig. 3–13: Typical supply current
versus ambient temperature
0
100
200
300
400
500
0 5 10 15 20 25 30 V
mV
VDD
VOL
TA = 150 °C
TA = 25 °C
TA = –40 °C
Fig. 3–14: Typical output low voltage
versus supply voltage
IO = 20 mA
0
100
200
300
400
500
–50 0 50 100 150 200 °C
mV
TA
VOL
VDD = 24 V
VDD = 4.5 V
Fig. 3–15: Typical output low voltage
versus ambient temperature
IO = 20 mA
HAL300
DATA SHEET
17Micronas
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 V
kHz
VDD
fosc
TA = 25 °C
Fig. 3–16: Typical internal chopper frequency
versus supply voltage
0
10
20
30
40
50
60
70
3 3.5 4.0 4.5 5.0 5.5 6.0 V
kHz
VDD
fosc
TA = 25 °C
Fig. 3–17: Typical internal chopper frequency
versus supply voltage
0
10
20
30
40
50
60
70
–50 0 50 100 150 200
kHz
TA
fosc
VDD = 12 V
°C
Fig. 3–18: Typical internal chopper frequency
versus ambient temperature
–50 0 50 100 150 200
µA
TA
IOH
°C
100
10–1
10–2
10–3
10–4
10–5
101
102
VOH = 24 V
VDD = 5 V
Fig. 3–19: Typical output leakage current
versus ambient temperature
HAL300 DATA SHEET
18 Micronas
20 22 24 26 28 30
µA
VOH
IOH
V
100
10–1
10–2
10–3
10–4
10–5
101
102
VDD = 5 V
TA = 125 °C
TA = 75 °C
TA = 25 °C
Fig. 3–20: Typical output leakage current
versus output voltage
HAL300
DATA SHEET
19Micronas
4. Application Notes
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress to the package
can influence the magnetic parameters if the sensor is
used under back-biased applications. This piezo sensi-
tivity of the sensor IC cannot be completely compen-
sated for by the switching offset compensation tech-
nique.
For back-biased applications, the HAL320 is recom-
mended. In such cases, please contact our Application
Department. They will provide assistance in avoiding
applications which may induce stress to the ICs. This
stress may cause drifts of the magnetic parameters indi-
cated in this data sheet.
4.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient tem-
perature TA).
TJ = TA + ∆T
Under static conditions and continuous operation, the
following equation applies:
∆T = IDD * VDD * Rth
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax – ∆T
4.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteris-
tics when operated within the Recommended Operating
Conditions (see page 12).
Supply Voltage Below 4.5 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 4.5 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 4.5 V is not
tested on a regular base. For special test condi-
tions, please contact Micronas.
4.3. Start-up Behavior
Due to the active offset compensation, the sensors have
an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
the Electrical Characteristics (see page 13).
During the initialization time, the output state is not de-
fined and the output can toggle. After ten(O), the output
will be low if the applied magnetic field B is above BON.
The output will be high if B is below BOFF.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be either
low or high. In order to achieve a well-defined output
state, the applied magnetic field must be above BONmax,
respectively, below BOFFmin.
WARNING:
DO NOT USE THESE SENSORS IN LIFE-
SUPPORTING SYSTEMS, AVIATION, AND
AEROSPACE APPLICATIONS!
HAL300 DATA SHEET
20 Micronas
4.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 4–1). For automotive ap-
plications, a 220 W series resistor to pin 1 is recom-
mended. Because of the IDD peak at 4.1 V, the series re-
sistor should not be greater than 270 Ω. The series
resistor and the capacitor should be placed as closely as
possible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standard ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
OUT
GND
3
2
1V
DD
4.7 nF
VEMC
VP
RV
220 Ω
RL1.2 kΩ
20 pF
Fig. 4–1: Test circuit for EMC investigations
HAL300
DATA SHEET
21Micronas
HAL300 DATA SHEET
22 Micronas
5. Data Sheet History
1. Final data sheet: “HAL300 Differential Hall Effect
Sensor IC”, July 15, 1998, 6251-345-1DS. First release
of the final data sheet.
2. Final data sheet: “HAL300 Differential Hall Effect
Sensor IC”, April 23, 2004, 6251-345-2DS. Second
release of the final data sheet. Major changes:
– temperature range “C” removed
– additional temperature range “K”
– new package diagrams for SOT89-2 and TO92UA-4
– package diagram for TO92UA-3 added
– ammopack diagrams for TO92UA-3/-4 added
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
Order No. 6251-345-2DS
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirma-
tion form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume re-
sponsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
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