r M/A-COM SEMICONDBRLNGTON 12 D MM Sb42214 0001396 b MMIC "4 == : T-07-11 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Features @ HIGH POWER @ HERMETIC SEALS @ LOW THERMAL RESISTANCE @ HIGH EFFICIENCY 30 Description Applications These series of high power silicon multiplier diodes are These series of varactor diodes are intended for use in designed for efficient frequency conversion at output fre- multipliers specifically designed as transmitters for com- quencies 150 MHz to 10 GHz. These diodes are intended munication and telemetry applications. for use in either doublers or triplers. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION * Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 8-311N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Specifications @ Ty, = 25C 1) D Mm Sb4eel4 0001397 & M/A-COM SEMICOND .BRLNGTON T-07-11 Electrical Specifications ; . : Min./Max.4 Maximum | Minimum2 | Series? Junction Minimum Input Output Input Breakdown | Resistance | Capacitance | Maximum | Output Model! Case ; Frequency | Frequency | Power Voltage Rs Cc Thermal | Power Number Style (MHz) (MHz) (Watts) (Volts) (Ohms) (pe) . Resistance | (Watts) 1N4386 24 50 150 50.0 250 1.50 /50.00 6 25.0 1N4387 24 150 450 30.0 150 0.70 /35.00 5 15.0 1N4388 24 500 4000 20.0 100 0.25 /20.00 9 11.0 1N5149 56 500 1000 20.0 80 0.25 5.00/20.00 9 11.0 1N5150 56 500 1000 35.0 80 0.25 5.00/20.00 9 24.0 1N5150A 56 500 1000 35.0 80 0.25 10.80/13.20 6 25.0 1N5151 32 1000 2000 12.0 75 0.50 5.00/7.50 23 6.0 1N5152 30 1000 2000 12.0 75 0.50 5.00/7.50 23 6.0 1N5153 56 1000 2000 12.0 75 0.50 5.00/7.50 23 6.0 1N5152A 30 1000 2000 12.0 75 0.50 5.40/6.60 15 7.0 1N5153A 56 1000 2000 12.0 75 0.50 5.40/6.60 15 7.0 1N5154 32 2000 6000 5.0 35 0.90 1.00/3.00 35 2.0 1N5155 30 2000 6000 5.0 35 0.90 1.00/3.00 35 2.0 1N5155A 30 2000 6000 5.0 35 0.90 1.71/2.09 20 2.0 1N5156 32 5000 10000 2.5 20 0.50 0.50/1.00 38 1.0 1N5157 30 5000 10000 2.5 20 1.00 0.50/1.00 38 1.0 NOTES: 1. Standard case styles are listed for each model number. 2. Breakdown voltage (Vp) is measured at a reverse bias current of 10 microamperes. 3. Series resistance (Rg) is measured at ~6 volts and 500 MHz. 4. Junction capacitance is measured at a 1 MHz and -6 volts. MAXIMUM RATINGS Temperature Range Operating Range Storage Range Maximum Voltage -65C to + 200C - 65C to + 200C See breakdown voltage ENVIRONMENTAL RATINGS (Per MIL-STD-750) ENVIRONMENTAL PERFORMANCE These series of high power multiplier varactor diodes are capable of meeting the tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MIL-STD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products. 10 days 90-98% Relative Humidity 4 four minute cycles (X,Y,A @ 20 min., 100-2000 Hz) Method Level Temperature: Storage 1031 - 65C to + 200C Operating _ ~ 65C to + 200C Cycling 1054 5 cycles Solderability 2026 230C as applicable Thermal Shock 1056 5 cycles, 0-100C Moisture Resistance 1021 Shock 2016 5 blows (X,Y,Z @ 1500 gs) Vibration Fatigue 2046 32 hours (X,Y,Z @ 20 gs min.) Vibration Variable Frequency 2056 Constant Acceleration 2006 X,Y,Z, @ 20,000 gs Terminal Strength 2036 Package dependent Salt Atmosphere 1041 35C for 24 hours M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 * TWX 710-332-6789 * TELEX 94-9464M/A-COM SEMICONDIBRLNGTON 11 D WM 5642224 0001398 T MMIC 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Case Styles @ DENOTES CATHODE NOT TO SCALE T-07-11 24 \ F INCHES MILLIMETERS i DIM. MIN. | MAX. MIN. | MAX. A 0.800 20,32 7 \ B 0.422 0.453 10,72 11,51 C 0.424 0.437 10,77 11,10 G D 0.060 1,52 dl a E | 0.290 7,37 pia. III F 0.080 _ 2,03 G _ 0.160 _ 4,06 E _ i DIA. A | TA #10-32 UNF24"7} | f OB THD. ! | { 30 < A DIA. INCHES MILLIMETERS <p! DIM. MIN. | MAX. MIN. | MAX. DIA. _ A 0.119 0.127 3,02 3,22 S~ B 0.060 0.064 1,52 1,63 y C 0.205 0.225 5,21 5,72 i - D 0.085 0.097 2,16 2,46 I E 0.060 0.064 1,52 1,63 \ } F 0.060 0.064 1,52 1,63 Ge G 0.016 0.024 0,41 0,61 e t H 0.079. | 0.083 2,01 211 { Cp = 0.18 pF Typical pe. Lg = 0.40 nH Typical M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 * TELEX 94-9464 8-33MZA-COM SEMICOND,BRLNGTON JL D MM Sb4ue214 90013999 41 MENIC 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors 5 Case Styles (Contd) T-07-11 32 INCHES MILLIMETERS DIM. _MIN. | MAX. MIN. | MAX. A 0.119 0.125 3,02 3,18 B 0.055 0.065 1,40 1,65 C 0.077 0.083 1,96 2,11 D _ 0.025 _= 0,04 Cp = 0.30 pF Typical Lg = 0.40 nH Typical 56 <r INCHES MILLIMETERS DIA. DIM. MIN. | MAX. MIN. | MAX. P< G DIA. A 0.766 0.792 19,46 20,12 V7 Neer K Ravius B _ 0.240 _ 6,10 | H C 0.130 REF. 3,30 REF. Y D 0.145 0.155 3,68 3,94 c { E 0.180 0.190 4,57 4,83 I F | 0.092 0.094 2,34 2,39 i | L G 0.155 0.165 3,94 4,19 D i i H 0.180 0.190 4,57 4,83 J 0.185 0.195 4,70 4,95 i A nl K 0.030 | 0.046 0,76 1,17 ie BASE ADAPTER L 0.095 0.105 2,41 2,67 M _ 0.030 _ 0,76 - Base adaptor optional. K Cp = 0.35 pF Typical BDIA. JDIA. Lg = 3.0 nH Typical M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 8-34