Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6851
JANTXV2N6851
Features:
■Avalanche Energy Rating
■Dynamic dv/dt Rating
■Simple Drive Requirements
■Ease of Paralleling
■Hermetically Sealed
P-CHANNEL
Provisional Data Sheet No. PD-9.551B
-200 Volt, 0.80ΩΩ
ΩΩ
Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
JANTX2N6851
JANTXV2N6851
[REF:MIL-PRF-19500/564]
[GENERIC:IRFF9230]
HEXFET
®
POWER MOSFET
Absolute Maximum Ratings
Parameter JANTX2N6851, JANTXV2N6851 Units
ID @ VGS = -10V, T C = 25°C Continuous Drain Current -4.0
ID @ VGS = -10V, TC = 100°C Continuous Drain Current -2.4
IDM Pulsed Drain Current ➀-16
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/K ➄
VGS Gate-to-Source V oltage ±20 V
dv/dt Peak Diode Recovery dv/dt ➂-5.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300
(0.063 in. (1.6mm) from
case for 10.5 seconds)
Weight 0.98 (typical) g
oC
A
-4.0A
0.80Ω-200V
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Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case — — 5.0
RthJA Junction-to-Ambient — — 175 K/ W Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ISContinuous Source Current (Body Diode) — — -4.0 Modified MOSFET symbol showing the
ISM Pulse Source Current (Body Diode) ➀— — -16 integral reverse p-n junction rectifier.
VSD Diode Forward V oltage — — -6.0 V Tj = 25°C, IS = -4.0A, VGS = 0V ➃
trr Reverse Recovery Tim e — — 400 n s Tj = 25°C, IF = -4.0A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 4.0 µCV
DD ≤ -50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + L D.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0 mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.22 — V/°C Reference to 25°C, ID = -1.0 mA
Voltage
RDS(on) Static Drain-to-Source — — 0.80 VGS = -10V, ID = -2.4A
On-State Resistance — — 1.68 ΩVGS = -10V, ID = -4.0A
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 2.2 — — S ( )V
DS > -15V, IDS = -2.4A ➃
IDSS Zero Gate Voltage Drain Current — — -25 VDS = 0.8 x Max Rating,VGS = 0V
— — -250 VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge 14.7 — 34.8 V GS = -10V, ID = -4.0A
Qgs Gate-to-Source Charge 0.8 — 7.0 VDS = Max. Rating x 0.5
Qgd Gate-to-Drain (“Miller”) Charge 5.0 — 17 see figures 6 and 13
td(on) Turn-On Delay T ime — — 50 V DD = -100V, ID = -4.0A,
trRise Time — — 100 RG = 7.5 Ω, VGS = -10V
td(off) Turn-Off Delay Time — — 100
tfFall Time — — 80 see figure 10
LDInternal Drain Inductance — 5.0 —
LSInternal Source Inductance — 15.0 —
Ciss Input Capacitance — 700 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 200 — f = 1.0 MHz
Crss Reverse Transfer Capacitance — 40 — see figure 5
JANTX2N6851, JANTXV2N6851 Device
Ω
➃
µA
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
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Fig. 1 — Typical Output Characteristics
TC = 25°C Fig. 2 — Typical Output Characteristics
TC = 150°C
Fig. 3 — Typical T ransfer Characteristics Fig. 4 — Normalized On-Resistance Vs.Temperature
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
JANTX2N6851, JANTXV2N6851 Device
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Fig. 13a — Gate Charge Test Circuit
Fig. 12a — Unclamped Inductive Test Circuit Fig. 12b — Unclamped Inductive Waveforms
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
JANTX2N6851, JANTXV2N6851 Device
Fig. 13b — Basic Gate Charge W aveform
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Case Outline and Dimensions — TO-205AF (TO-39)
➀Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
➁@ VDD = -50V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = -4.0A, VGS = -10V, 25 ≤ RG ≤ 200Ω
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 10/96
JANTX2N6851, JANTXV2N6851 Device
➂ISD ≤ -4.0A, di/dt ≤ -120A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
➃Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄K/W = °C/W
W/K = W/°C
All dimensions are shown millimeters (inches)
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