PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK4035 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION 0.16 +0.1 -0.06 +0.1 0.65 -0.15 0.4 +0.1 -0.05 3 1.5 2.8 0.2 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting externals, is the best for the high-speed switching usage of the equipment that promotes the automation of space-saving and mounting. 0 to 0.1 1 2 FEATURES * Low input capacitance Ciss = 75 pF TYP. * Low on-state resistance RDS(on) = 4.5 MAX. (VGS = 10 V, ID = 0.25 A) * Small and surface mount package (SC-96) 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 0.2 1. Gate 2. Source 3. Drain ORDERING INFORMATION PART NUMBER 2SK4035 2SK4035-A Note PACKAGE SC-96 (Mini Mold Thin Type) SC-96 (Mini Mold Thin Type) EQUIVALENT CIRCUIT Note Pb-free (This product does not contain Pb in external electrode and other parts.) Drain Marking: XP ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Note1 Drain Current (pulse) Total Power Dissipation (TA = 25C) Note2 Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 250 30 0.5 2.0 0.2 1.25 150 -55 to +150 V V A A W W C C Body Diode Gate Gate Protection Diode Source Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17447EJ2V0PM00 (2nd edition) Date Published May 2005 NS CP(K) Printed in Japan 2005 2SK4035 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 30 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1.0 mA 2.5 3.7 4.5 V | yfs | VDS = 10 V, ID = 0.25 A 0.2 0.6 RDS(on) VGS = 10 V, ID = 0.25 A 3.2 Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S 4.5 Input Capacitance Ciss VDS = 10 V 75 pF Output Capacitance Coss VGS = 0 V 15 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 6 pF Turn-on Delay Time td(on) VDD = 125 V, ID = 0.25 A 8 ns tr VGS = 10 V 5 ns td(off) RG = 10 12 ns 40 ns 4 nC Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 200 V Gate to Source Charge QGS VGS = 10 V 0.9 nC QGD ID = 0.5 A 2 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 0.5 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 0.5 A, VGS = 0 V 44 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 59 nC Note Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% = 1 s Duty Cycle 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 VDD 90% VDS VGS 0 IG = 2 mA tf toff Preliminary Product Information D17447EJ2V0PM 2SK4035 * The information contained in this document is being issued in advance of the production cycle for the product. The parameters for the product may change before final production or NEC Electronics Corporation, at its own discretion, may withdraw the product prior to its production. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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