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MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING
N-CHANNEL POWER MOS FET
PRELIMINARY PRODUCT INFORMATION
Document No. D17447EJ2V0PM00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
2SK4035 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state
resistance and because it is the small size surface mounting
externals, is the best for the high-speed switching usage of the
equipment that promotes the automation of space-saving and
mounting.
FEATURES
• Low input capacitance
C
iss = 75 pF TYP.
• Low on-state resistance
R
DS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)
• Small and surface mount package (SC-96)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK4035 SC-96 (Mini Mold Thin Type)
2SK4035-A Note SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in external
electrode and other parts.)
Marking: XP
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 250 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) (TA = 25°C) ID(DC) ±0.5 A
Drain Current (pulse) Note1 ID(pulse) ±2.0 A
Total Power Dissipation (TA = 25°C) PT1 0.2 W
Total Power Dissipation (TA = 25°C) Note2 PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
2.8 ±0.2
1.5
0.95
1.9
2.9 ±0.2
0.95
0.65
+0.1
–0.15
1. Gate
2. Source
3. Drain
21
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Preliminary Product Information D17447EJ2V0PM
2
2SK4035
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 2.5 3.7 4.5 V
Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 0.25 A 0.2 0.6 S
Drain to Source On-state Resistance Note RDS(on) VGS = 10 V, ID = 0.25 A 3.2 4.5 Ω
Input Capacitance Ciss VDS = 10 V 75 pF
Output Capacitance Coss VGS = 0 V 15 pF
Reverse Transfer Capacitance Crss f = 1.0 MHz 6 pF
Turn-on Delay Time td(on) VDD = 125 V, ID = 0.25 A 8 ns
Rise Time tr VGS = 10 V 5 ns
Turn-off Delay Time td(off) RG = 10 Ω 12 ns
Fall Time tf 40 ns
Total Gate Charge QG VDD = 200 V 4 nC
Gate to Source Charge QGS VGS = 10 V 0.9 nC
Gate to Drain Charge QGD ID = 0.5 A 2 nC
Body Diode Forward Voltage Note VF(S-D) IF = 0.5 A, VGS = 0 V 0.8 V
Reverse Recovery Time trr IF = 0.5 A, VGS = 0 V 44 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s 59 nC
Note Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG. R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
µ
Duty Cycle ≤ 1%
τ
PG. 50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
2SK4035
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