Data Sheet 10V Drive Nch MOSFET SP8K80 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Built-in G-S protection diode. 2) Small surface mount package(SOP8). (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain (8) (7) (6) (5) (1) (2) (3) (4) Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) SP8K80 Inner circuit Taping TB 2500 (8) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS ID *3 Drain current Continuous Pulsed Continuous IDP IS *1 Pulsed ISP *1 Avalanche current Avalanche energy IAS EAS *2 Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *4 Source current (Body Diode) *3 *2 Limits Unit 500 30 0.5 V V A 2 0.5 A A 2 0.25 0.017 A A mJ 2 0.2 55 to 150 W C C (7) 2 (6) (5) 2 1 (1) 1 (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum channel temperature allowed. *4 Mounted on a ceramic board. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Data Sheet SP8K80 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 10 A VGS=30V, VDS=0V 500 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 100 A VDS=500V, VGS=0V VGS (th) 3.0 - 5.0 V VDS=10V, ID=1mA RDS (on)* - 9.0 11.7 ID=0.25A, VGS=10V l Yfs l* 0.1 - - S VDS=10V, ID=0.25A Input capacitance Ciss - 23.5 - pF VDS=25V Output capacitance Coss - 36.5 - pF VGS=0V Reverse transfer capacitance Crss - 2.4 - pF f=1MHz Turn-on delay time td(on) * - 10 - ns VDD 250V, ID=0.25A tr * - 18 - ns VGS=10V Turn-off delay time td(off) * - 25 - ns RL=1000 Fall time tf * Qg * Qgs * Qgd * - 170 - ns RG=10 - 3.8 - nC VDD 250V - 1.3 1.6 - nC nC ID=0.5A VGS=10V Min. Typ. Max. - - 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Total gate charge Gate-source charge Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward voltage Symbol VSD * Unit V Conditions IS=0.25A, VGS=0V *Pulsed www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet SP8K80 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics () Fig.1 Typical Output Characteristics () 0.5 0.1 Ta=25C Pulsed VGS=10.0V VGS=10.0V VGS=8.0V VGS=8.0V VGS=7.0V 0.08 0.4 VGS=6.5V VGS=6.5V 0.06 Drain Current : ID [A] Drain Current : ID [A] VGS=6.0V VGS=5.0V 0.04 0.02 VGS=6.0V VGS=7.0V Ta=25C Pulsed 0.3 0.2 VGS=5.0V 0.1 VGS=4.5V VGS=4.5V 0 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 6 7 8 9 10 VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] Ta=125C Ta=75C Ta=25C Ta=-25C 0.1 Drain Currnt : ID [A] 5 6 VDS=10V pulsed 0.01 2.0 3.0 4.0 5.0 6.0 7.0 5 4 3 2 8.0 -50 0 100 150 Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 25 VGS=10V pulsed Static Drain-Source On-State Resistance : RDS(on) [] Ta=125C Ta=75C Ta=25C Ta=-25C 10 1 0.01 50 Channel Temperature : Tch [] Gate-Source Voltage : VGS [V] Static Drain-Source On-State Resistance RDS(on) [] 4 Fig.4 Gate Threshold Voltage vs. Channel Temperature 1 0.001 3 Drain-Source Voltage : VDS [V] 0.1 20 ID=0.50A 15 10 ID=0.25A 5 0 1 Drain Current : ID [A] www.rohm.com (c) 2011 ROHM Co., Ltd. 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VGS=10V pulsed -50 0 50 100 150 Channel Temperature : Tch [] 3/6 2011.10 - Rev.A Data Sheet SP8K80 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 1 1 Forward Transfer Admittance Yfs [S] VDS=10V pulsed VGS=0V pulsed Source Current : IS [A] 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.01 0.001 0.001 0.01 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.1 0.01 1 0 0.5 Drain Current : ID [A] FIg.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1.5 2 Fig.10 Switching Characteristics 20 10000 Ta=25C Pulsed 18 VDD250V VGS=10V RG=10 Ta=25C Pulsed tf 16 1000 14 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [W] 1 Source-Drain Voltage : VSD [V] 12 ID=0.5A 10 8 ID=0.25A 6 td(off) 100 tr 10 4 td(on) 2 0 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0.1 1 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 1000 12 Ta=25C VDD=250V ID=0.5A Pulsed 10 Ta=25C f=1MHz VGS=0V Coss 100 8 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 0.01 Gate-Source Voltage : VGS [V] 6 4 Ciss Crss 10 1 2 0 0 1 2 3 4 0.1 0.01 5 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] 4/6 2011.10 - Rev.A Data Sheet SP8K80 Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.14 Maximum Safe Operating Area 10 Operation in this area is limited by RDS(on) (VGS = 10V) Ta=25C Single Pulse:1unit 1 1 Drain Current : ID [ A ] Normalized Transient Thermal Resistance : rt 10 0.1 0.01 Rth(ch-a)=89.3C/W Rth(ch-a)(t)=r(t)xRth(ch-a) 0.0001 0.001 0.01 0.1 1 10 100 0.1 PW = 1ms PW = 10ms 0.01 Mounted on a ceramic board. (30mm x 30mm x 0.8mm) 0.001 PW = 100s 0.001 1000 Pulse width : Pw (s) Ta=25C Single Pulse:1unit Mounted on a ceramic board. (30mm x 30mm x 0.8mm) 0.1 1 10 DC operation 100 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Reverse Recovery Time vs. Source Current 1000 Reverse Recovery Time : trr [ns] Ta=25C di/dt=50A/s VGS=0V Pulsed 100 10 0.1 1 Source Current : IS [A] www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A Data Sheet SP8K80 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A Datasheet sp8k80 - Web Page Buy Distribution Inventory Part Number Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS sp8k80 SOP8 2500 2500 Taping inquiry Yes