<> BD 644 - BD 646 - BD 648 - BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: @ Hohe Sperrspannung @ High reverse voltage @ Sehr hohe Stromverstarkung @ Very high current transfer ratio @ Verlustleistung 62,5 W @ Power dissipation 62.5 W @ Glaspassivierung @ Glass passivation @ BD 644, BD 646, BD 648, BD 650 sind @ BD 644, BD 646, BD 648, BD 650 are komplementar zu complementary to BD 643, BD 645, BD 647, BD 649 BD 643, BD 645, BD 647, BD 649 Vorlaufige technische Daten - Preliminary specifications Abmessungen in mm Dimensions in mm LODO 1138 CT ! 2,65 . f 7 - 5kQ 1000 |, 6375 Kollektor mit Montageflache verbunden Zubehr Collector connected Accessories with metallic surface lsolierscheibe isolating washer Best. Nr. 564 542 Normgehause isolierbuch Tass solierbuchse 14A3 DIN 41869 Isolating bush Best. Nr. 513 242 JEDEC TO 220 Gewicht - Weight max. 1,5g S$ 8/V.2.652/1077A1 81BD 644 - BD 646 - BD 648 - BD 650 Absolute Grenzdaten BD 644 BD646 BD648 BD 650 Absolute maximum ratings Kollektor-Basis-Sperrspannung UcBo 45 60 80 100 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung -UcCEO 45 60 80 =100 Vv Collector-emitter voltage Emitter-Basis-Sperrspannung UERO 5 Vv Emitter-base voltage Kollektorstrom Io 8 mA Collector current Kollektorspitzenstrom lom 12 mA Collector peak current Basisstrom Ip 150 mA Base current Gesamtverlustleistung Total power dissipation lease S 25C Prot 62,5 mw Sperrschichttemperatur h 150 C Junction temperature Lagerungstemperaturbereich stg -55 ... +150 C Storage temperature range 60 40 20 Oo 40 80 120 C case _> 82BD 644 - BD 646 - BD 648 - BD 650 Warmewiderstand Min. Typ. Max. Thermal resistance Sperrschicht-Gehause Rthuc 2 CIW Junction case KenngrBen Characteristics lease = 25C, falls nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current -Ucp= 45V BD 644 -IpB9 200 HA -Ucp= 60V BD646 -JoR09 200 pA -UcE= 80V BD648 = -JoR0 200 yA UcE = 100V BD 650 IcBo 200 pA lcase == 100C, -Uocp =30V BD 644 -IcBo 2 mA Uop =40V BD 646 -IcBo 2 mA -Upp = 50V BD648 = -JoR0 2 mA -Uop =60V BD 650 -IcBo 2 mA -Uce = 25V BD 644 -IcEG 500 yA -UcE = 30V BD646 -IcEG 500 yA -Uce = 40V BD648 = -IpEO 500 yA -Ucge = 50V BD650 -/cED 500 pA Emitterreststrom Emitter cut-off current Uep =5V -IEBO 5 mA Koliektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage BD 646 -U(BR)CEO') 60 Vv BD 648 UBR)CEO') 80 Vv BD 650 -UBR)CEO') 100 Vv Kollektor-Sattigungsspannung Collector saturation voltage Ig =4A,-Igp=16mA BD 644 UcEsat 2 Vv Ig =3A,-Ip=12mA BD 646, BD 648, BD 650 UcEsat 2 Vv Basis-Emitter-Spannung Base-emitier voltage Ugg = 3V,-IG =4A BD644 -Upep 2,5 Vv -Io =3A BD 646, BD 648, BD 650 -Upe 2,5 Vv t ') ~0,01; tp ~0,1 ms 83BD 644 - BD 646 - BD 648 - BD 650 Min. Typ. DurchlaBspannung der Schutzdiode Forward voltage of the protection diode IpF=3A UF 1,2 Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio UcE=3V, IG =4A BD 644 Are 750 BD 646, BD 648, BD 650 AEE 750 heg"Grenzfrequenz hye-Cutt-off frequency UcE=3V,-IG =4A BD 644 Shife 100 Iq =3A BD 646, BD 648, BD 650 Site 100 Transitfrequenz Gain bandwidth product Ucg=3V, Igo = 3A, f = 1 MHz ST 7 84 Max. kHz kHz MHz