Order this data shaat by 2N7000/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N7000 Advance Information Small-Signal Transistor Field Effect N-Channel Enhancement-Mode Silicon Gate TMOS J ... are designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching .,. . ,, L;, ,, .;..`:. !,,,,, ]., \%e, `.$$~?, > *: Speeds D . Logic Level Switch CMOS Logic Interface Bipolar Darlington Replacement Lamp Relay Driver or Buffer . Analog Signal Switching WIMUM s! ..3,,,4.:. " CASE 29-02 (TO-226AA) t,: ,, ~,,\,,,,,,$- Resistance Junction to ~~'$nt Maximum Lead Temperatu&4~$@oldering Ill W from case for l~$*econ'& ELECTRICAL CHARA$WTICS :t. ........:\ \ ...+~:i. ,?.."+f., :.:,,. ?:. `)!. .,$,;.. , ....~~. .,,:..,~.+$. .. `"*'y,:t ~J .4,;,. , *f\:., t,<...' ., ,$+, \}.,\\l~;;' :.?>\~L~ \ ~. t,\ .,:i.".~. / @ -.,..? ,,+~ GO *?., ~.!).~:,,.?,,T .,~,,, .+3:4,,. ~..) >.. >)`;:b, a. ;$ ~ ~$~' ~,.,? ..$2.*. a<> RATINGS THERMAL CHARACTERISTICS Thermal .,, (Tc Purposes, = 25C unless otherwise Characteristic ~eJA 312.5 "CM TL 300 "c noted) Symbol Min V(BR)DSS I Max Unit 60 -- Vdc -- -- 1 1 pAdc mA -- -lo nAdc OFF CHARACT~@ Drain-So&~e (v@':$:,yb Zak~,,~~& &reakdown Voltage = 10A) Voltage Drain Current iDSS (%$s= ~ v, VGS = O) (v~s = 48 V, VGS = O, TJ = 125"C) Gate-Body Leakage Current, Forward IGSSF (VGSF = 15 Vdc, VDS = O) (continued) This document contains information on a new product. Specifications and information herein are subject to change without notice. TMOS is a trademark of Motorola Inc. m @MOTOROU INC., 1986 MO~ROLA m ADI1318RI ELECTRICAL CHARACTERISTICS -- continued (Tc = 25C unless otherwise Charaderistic noted) Symbol Wn Gate Threshold Voltage (VDS = VGS, ID = 1 mA) VGS(th) 0.8 Static Drain-Source On-Resistance (VGS = 10 Vdc, [D = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 V, Tc = 125C) rDs(on) Drain-Source On-Voltage (VGS = 10 V, ID = 0.5 Adc) (VGS = 4.5 V, ID = 75 mA) VDS(On) I ON CHARACTERISTICS* I 3 Vdc Ohm -- -- 5 9 -- -- 2.5 0.4 lD(on) 75 -- 9fs 100 -- q~s -- @o `~~+,$ ~ Coss -- cr~~ -- Vdc :,', .l~~,<"',..:X> ,:+>.,:$!:, m~>?v. ,.`* .,{!, , ` +*?4 :,. ~%...(? = 4.5 V, VDS' = 10 V) Foward Transconductance (VDS = 10 V, ID = 200 mA) DYNAMIC CHARACTERISTICS Input Capacitance VDS = 25 V, VGS = O, f=l MHz Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS* Turn-On Delay Tme VDD = 15 V,iD Tu m-Off Delay Time Unit ,. On-State Drain Current ~GS Max <g;&%' ~J,. ,:ii ~~: ,. $ ,> :,,., ~f$$:'.$) ,,,,*!:>'&\~>i\ .(3.:}}\$.ii~ pF ,,,$:+;{, ,? "**F :: ;2:$$ , h ..... . ..?,.,........ .. ``,,. , ) t-_ - `"n-' Rgen = 25 ohms, RL = 25 ohms toff 4**& .,$ :.: `?r.: .:}. ~.. .:. ,$>.,- .l~i~.i~$, *.. *Pulse Test Pulse Wdth s 300 MS,Duty Cycle s 20/o. 1 I [ ??..%v ~uTLINE "'ii. DIMENsloN~,f ...-. I I All J~EC time~ions andnotesapplv >4::Y:1* .!>,;.~ `,.~ $~~! CASE 29-02 ,i,\*$:t, f:t;!.a,t ~.$~i:,.+ .,7 `~-(TO-226AA) ..J}3:r\b! ~!.}. $! f,~. !!,." .\\. \. \t:k:?i,<\<,\ ,,.).y ~,.* Motofola reserves the right to make changas without furthar notim to any produsta herein to improve rehabifity; funotion or dasign. Motorola doaa not assume any liability ariaing out of tha apptisetion or usa of any produti or circuit described herein; neither does it sonvey any ticenseunder ita patent rights nor the rights of others. Motorola and @ ara registered tradamarke of Motorola, Inc. ~: - O ~ M~OROLA Semiconducteum S.A. AVENUE G~NkRAL-EISENHOWER -31023 TOULOUSE CEDEX - FRANCE 2000 8/86