Order this data
MOTOROLA shaat by 2N7000/D
■SEMICONDUCTOR
TECHNICAL DATA
Advance Information
Small-Signal Field Effect
Transistor
2N7000
N-Channel Enhancement-Mode
Silicon Gate TMOS
J
...are designed for high voltage, high speed applications such as
switching regulators, converters, solenoid and relay drivers. .,. ..,,
L;,,,.;..‘:.!,,,,,].,
●Silicon Gate for Fast Switching Speeds \%e,
‘.$$~?,>*:
.Logic Level Switch Ds!
..3,,,4.:.
:.:,,.
.,, ?:. “
●CMOS Logic Interface ....~~.
‘)!..,$,;..
,.,,:..,~.+$.
●Bipolar Darlington Replacement .. ‘“*’y,:t~J
.4,;,.
,
●Lamp Relay Driver or Buffer *f\:.,t,<...’
., ,$+,\}.,\\l~;;’
.Analog Signal Switching \:.?>\~L~
t,\ ~..,:i.”.~.
@/
,,+~
GO -.,..?
*?., ,-
~.!).~:
,,T,,, CASE 29-02
~..)
,.?.,~.+3:4,,.
>.. (TO-226AA)
>)‘;:b,a.;$ ~
WIMUM RATINGS ~$~’ ~,.,?..-
$2.*.a<>
THERMAL CHARACTERISTICS ,, ,,,,,$-
t,:
~,,\,-
Thermal Resistance Junction to ~~’$nt ~eJA 312.5 “CM
Maximum Lead Temperatu&4~$@oldering Purposes,
Ill Wfrom case for l~$*econ’& TL 300 “c
ELECTRICAL CHARA$WTICS (Tc =25°C unless otherwise noted)
........:\
:t. \ ...+~:i. Characteristic
,?..“+f., Symbol Min IMax Unit
OFF CHARACT~@
Drain-So&~e &reakdown Voltage V(BR)DSS 60 —Vdc
(v@’:$:,yb =10A)
Zak~,,~~& Voltage Drain Current iDSS
(%$s= ~v, VGS =O) 1
(v~s =48 V, VGS =O, TJ =125”C)
—pAdc
—1mA
Gate-Body Leakage Current, Forward IGSSF —–lo nAdc
(VGSF =15 Vdc, VDS =O)
(continued)
This document contains information on anew product. Specifications and information herein are subject to change without notice.
TMOS is atrademark of Motorola Inc.
mMO~ROLA m
@MOTOROU INC., 1986 ADI1318RI
ELECTRICAL CHARACTERISTICS —continued (Tc =25°C unless otherwise noted)
ICharaderistic Symbol Wn Max IUnit
ON CHARACTERISTICS*
Gate Threshold Voltage VGS(th) 0.8 3Vdc
(VDS =VGS, ID =1mA) ,.
Static Drain-Source On-Resistance rDs(on) Ohm
(VGS =10 Vdc, [D =0.5 Adc) —5
(VGS =10 Vdc, ID =0.5 V, Tc =125°C) —9
Drain-Source On-Voltage VDS(On) Vdc
(VGS =10 V, ID =0.5 Adc) —2.5
(VGS =4.5 V, ID =75 mA) —0.4 :,’,
“’,..:X>
On-State Drain Current .l~~,<,:+>.,:$!:,
lD(on)
~GS =4.5 V, VDS’ =10 V) 75 —m~>?v. ‘*
,. .
,{!,,
‘+*?4
:,. ~%...(?
Foward Transconductance 9fs 100
(VDS =10 V, ID =200 mA) —<g;&%’
~J,. ,:ii
$,> :,,.,~~:,.
DYNAMIC CHARACTERISTICS ~f$$:’.$)
,,,,*!:>’&\~>i\.(3.:}}\$.ii~
Input Capacitance q~s —@o ‘~~+,$~pF
Output Capacitance VDS =25 V, VGS =O,
f=l MHz Coss —,,,$:+;{,
Reverse Transfer Capacitance ,?
cr~~ h
“**F
—:: ;2:$$ ,
SWITCHING CHARACTERISTICS* ...... ..?,.,........
.. ‘‘,,. ,)
Turn-On Delay Tme VDD =15 V,iD –‘“n–’ t-_
Tu m-Off Delay Time Rgen = 25 ohms, RL =25 ohms toff 4**& .,$ 1I[
*Pulse Test PulseWdth s 300 MS,Duty Cycle s20/o. :.: ‘?r.:
.:}.~.. .:.
,$>.,- .l~i~.i~$,*..
??..%v
~uTLINE DIMENsloN~,f “’ii.
I...-.
I
All J~EC time~ions andnotesapplv
>4::Y:1* .!>,;.~
‘,.~
~: $~~! CASE 29-02
,i,\*$:t,
f:t;!.a,t~.$-
~i:,.+.,7 ‘~--(TO-226AA)
..J}3:r\b!~!.}.$!
!!,.”.\\. \. f,~.
\t:k:?i,<\<,\
,,.).y
~,.*
Motofola reserves the right to make changas without furthar notim to any produsta herein to improve rehabifity; funotion or dasign.
Motorola doaa not assume any liability ariaing out of tha apptisetion or usa of any produti or circuit described herein; neither does it
sonvey any ticenseunder ita patent rightsnor the rights of others. Motorola and @ara registered tradamarke of Motorola, Inc.
O
-~M~OROLA SemiconducteumS.A.
AVENUE G~NkRAL-EISENHOWER -31023 TOULOUSE CEDEX -FRANCE
2000 8/86
