GP2S27J0000F Series
1
Sheet No.: D3-A01901EN
Date Oct. 3. 2005
© SHARP Corporation
Notice The content of data sheet is subject to change without prior notice.
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
GP2S27J0000F
Series
SMT, Detecting Distance : 0.7mm
Phototransistor Output,
Compact Refl ective
Photointerrupter
■Description
GP2S27J0000F Series is a compact-package, photo-
transistor output, refl ective photointerrupter, with emitter
and detector facing the same direction in a molding that
provides non-contact sensing. The compact package
series is a result of unique technology, combing transfer
and injection molding, that also blocks visible light to
minimize false detection.
This photointerrupter can be ordered in different CTR
ranks, and comes in a surface-mount, gullwing lead
package, suitable for refl ow soldering.
■Features
1. Refl ective with Phototransistor Output
2. Highlights :
• Compact Size
• Surface Mount Type (SMT), reflow soldering, with
gullwing leads
• Optional Tape and Reel (T&R) 1 000 pcs per reel
3. Key Parameters :
• Optimal Sensing Distance : 0.7mm
• Package : 4×3×1.7mm
• Visible light cut resin to prevent
4. Lead free and RoHS directive compliant
■Agency approvals/Compliance
1. Compliant with RoHS directive
■Applications
1. Detection of object presence or motion.
2. Example : printer, optical storage
2
Sheet No.: D3-A01901EN
GP2S27J0000F Series
■Internal Connection Diagram
1
4
2
3
1Anode
2Emitter
3Collector
4Cathode
0.75
1.7
0.4
1.75
C0.7
(0.4)
4+0.2
−0.1 3+0.2
−0.1
0.15+0.2
−0.1
5MAX.
(0.4) Detector center
(0.2) Emitter center
Date code mark
2 1
3 4
■Outline Dimensions (Unit : mm)
Product mass : approx. 0.03g
Plating material : SnCu (Cu : TYP. 2%)
• Tolerance : ±0.15mm.
• ( ) : Reference dimensions.
• The parallerism in 4 leads are 0.15mm.
• The dimensions shown do not include
burr.
Burr's dimension : 0.15mm MAX.
• The shaded portion has no SnCu plating.
3
Sheet No.: D3-A01901EN
GP2S27J0000F Series
Date code (Symbol)
January July
February August
March September
April October
May November
June December
Rank mark
There is no rank indicator.
Country of origin
Japan
4
Sheet No.: D3-A01901EN
GP2S27J0000F Series
■Absolute Maximum Ratings
■Electro-optical Characteristics
(Ta=25˚C)
Parameter Symbol Rating Unit
Input
Forward current IF50 mA
Reverse voltage VR6V
Power dissipation P 75 mW
Output
Collector-emitter voltage
VCEO 35 V
Emitter-collector voltage
VECO 6V
Collector current IC20 mA
Collector power dissipation PC75 mW
Total power dissipation Ptot 100 mW
Operating temperature Topr −25 to +85 ˚C
Storage temperature Tstg −40 to +100 ˚C
∗1Soldering temperature Tsol 260 ˚C
∗1 For 5s or less
(Ta=25˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input Forward voltage VFIF=20mA −1.2 1.4 V
Reverse current IRVR=6V −−
10 μA
Output Collector dark current ICEO VCE=20V −1 100 nA
Transfer
charac-
teristics
∗2 Collector Current ICIF=4mA, VCE=2V 20 45 120 μA
Response time Rise time trVCE=2V, IC=100μA,
RL=1kΩ, d=1mm
−20 100 μs
Fall time tf−20 100
∗3 Leak current ILEAK IF=4mA, VCE=2V −−
100 nA
∗2 The condition and arrangement of the refl ective object are shown below.
The rank splitting of collector current (IC) shall be executed according to the table below.
Rank Collector current, IC [μA]
(IF=4mA, VCE=2V) Package oleeve color
A 20 to 42 Yellow
B 34 to 71 Transparent
C 58 to 120 Green
∗3 Without refl ective object.
0.5mm 0.5mm
Soldering area:
The hatched area more than
0.5mm away from the lower
edge of package as shown
in the fi gure below.
●Test Condition and Arrangement for Collector Current
d=1mm glass plate
Al evaporation
5
Sheet No.: D3-A01901EN
GP2S27J0000F Series
■Model Line-up
Package Sleeve Taping Rank Collector current IC[μA]
(IF=4mA, VCE=2V, Ta=25˚C)50 pcs/sleeve 1 000 pcs/reel
Model No
GP2S27J0000F GP2S27TJ000F A, B or C 20 to 120
GP2S27BJ000F GP2S27T2J00F B 34 to 71
GP2S27CJ000F GP2S27T3J00F C 58 to 120
GP2S27ABJ00F GP2S27T5J00F A or B 20 to 71
GP2S27BCJ00F GP2S27T6J00F B or C 34 to 120
∗ The ratio of each rank can not be guaranteed.
Please contact a local SHARP sales representative to see the actial status of the produiction.
6
Sheet No.: D3-A01901EN
GP2S27J0000F Series
Fig.5 Collector Current vs.
Collector-Emitter Voltage
Fig.6 Relative Collector Current vs.
Ambient Temperature
Fig.3 Forward Current vs. Forward
Voltage
Fig.4 Collector Current vs.
Forward Current
00.5 1 1.5 2 2.5 3
1
10
100 25˚C
0˚C
50˚C
−25˚C
Ta=75˚C
Forward current IF (mA)
Forward voltage VF (V)
51015 25300
0
100
200
300
400
500
600
700
20
Collector current IC (μA)
Forward current IF (mA)
VCE=2V
Ta=25˚C
2468100
0
50
100
150
200
250
300
350
12
4mA
2mA
7mA
10mA
IF=15mA
Collector current IC (μA)
Collector-emitter voltage VCE (V)
Ta=
25˚C
Relative collector current IC (%)
Ambient temperature Ta (˚C)
025−25
0
20
40
60
80
100
120
50 10075
IF=4mA
VCE=2V
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Power Dissipation vs.
Ambient Temperature
025
0
20
15
40
60
120
50 10075
80
75
100
85
Ptot
P, P C
Power dissipation P (mW)
Ambient temperature Ta (˚C)
−25
−25 0 25 50 75 10085
Forward current IF (mA)
Ambient temperature Ta (˚C)
60
50
40
30
20
10
0
7
Sheet No.: D3-A01901EN
GP2S27J0000F Series
Fig.7 Collector Dark Current vs.
Ambient Temperature
Fig.8 Response Time vs. Load
Resistance
Fig.9
Test Circuit for Response Time
Fig.10
Relative Collector Current vs.
Distance (Reference value)
Fig.11
Detecting Position Characteristics (1)
Fig.12
Detecting Position Characteristics (2)
Collector dark current ICEO (A)
Ambient temperature Ta (˚C)
75 100
5025
0
10−10
10−9
10−8
10−7
10−6
VCE=20V
Input Output
Output
Input
RD
RL
VCC
td
tr
tstf
90%
10%
Reflector
Plate
Response time (μs)
Load resistance RL (kΩ)
0.1 1 10 100 1 000
0.1
1
10
100
1 000
VCE=2V
IC=100μA
Ta=25˚Ctr
tf
td
ts
Relative collector current (%)
Card moving distance L (mm)
0−1−224
80
100
40
60
20
0
61357
d=1mm
VCE=2V
IF=4mA
Ta=25˚C
Relative collector current (%)
Card moving distance L (mm)
−2−3024
80
100
40
60
20
0
6−11 3 5
d=1mm
IF=4mA
VCE=2V
Ta=25˚C
Relative collector current (%)
Distance between sensor and Al evaporation glass d (mm)
012 45
80
100
40
60
20
0
3
IF=4mA
VCE=2V
Ta=25˚C
8
Sheet No.: D3-A01901EN
GP2S27J0000F Series
Fig.13
Test Condition for Distance &
Detecting Position Characteristics
Fig.14
Freauency Response
Fig.15
Spectral Sensitivity (Detecting Side)
Al evaporated glass
d
Correspond to Fig.11
OMS card
L=0
d
−
White
1mm
Test condition
d=1mm
++
d=1mm
Test condition
1mm
White
−
d
L=0
OMS card
Correspond to Fig.12
Black Black
VCE =2V
IF=4mA
VCE =2V
IF=4mA
Correspond to Fig.10
Relative sensitivity (%)
Wavelength λ (nm)
600 700 800 900 1 000 1 200
80
100
40
60
20
0
1 100
Ta=25˚C
Voltage gain AV (dB)
Frequency f (Hz)
−20
−15
−10
−5
0
5
1kΩ
RL=10kΩ
VCE=2V
IC=100μA
Ta=25˚C
102103104105106
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
9
Sheet No.: D3-A01901EN
GP2S27J0000F Series
■Design Considerations
●Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Distance characteristic
Please refer to Fig.10 (Relative collector current vs. Distance) to set the distance of the photointerrupter
and the object.
This product is not designed against irradiation and incorporates non-coherent IRED.
●Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
●Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category Material Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm) Response time (μs)
Phototransister Silicon (Si) 930 700 to 1 200 20
• Photo emitter (qty. : 1)
Category Material Maximum light emitting
wavelength (nm) I/O Frequency (MHz)
Infrared emitting diode
(non-coherent) Gallium arsenide (GaAs) 950 0.3
• Material
Case Lead frame Lead frame plating
Black polyphenylene
sulfi de resin 42Alloy SnCu plating
10
Sheet No.: D3-A01901EN
GP2S27J0000F Series
■Manufacturing Guidelines
●Storage and management after open
Storage condition
Storage temp.: 5 to 30˚C, Storage humidity : 70%RH or less at regular packaging.
Treatment after opening the moisture-proof package
After opening, you should mount the products while keeping them on the condition of 5 to 25˚C and 70%RH
or less in humidity within 4 days.
After opening the bag once even if the prolonged storage is necessary, you should mount the products within
two weeks.
And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products
and silicagel are sealed up again, you should keep them under the condition of 5 to 30˚C and 70%RH or
less in humidity.
Baking before mounting
When the above-mentioned storage method could not be executed, please process the baking treatment
before mounting the products.
However the baking treatment is permitted within one time.
Recommended condition : 125˚C, 16 to 24 hours
∗Do not process the baking treatment with the product wrapped. When the baking treatment processing, you
should move the products to a metallic tray or fi x temporarily the products to substrate.
●Soldering Method
Refl ow Soldering:
Refl ow soldering should follow the temperature profi le shown below.
Soldering should not exceed the curve of temperature profi le and time.
Please solder within one time.
MAX
240˚C
MAX
160˚C
200˚C
25˚C
1 to 4˚C/s
MAX120s
MAX10s
MAX60s
MAX90s
1 to 4˚C/s
1 to 4˚C/s
11
Sheet No.: D3-A01901EN
GP2S27J0000F Series
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the
impact on the junction between the device and PCB varies depending on the cooling and soldering
conditions.
Lead pin
Lead terminals of this product are tin copper alloy plated. Before usage, please evaluate solderability with
actual conditions and confi rm. And the uniformity in color for the lead terminals are not specifi ed.
●Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
Do not execute ultrasonic cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
●Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
12
Sheet No.: D3-A01901EN
GP2S27J0000F Series
■Package specifi cation
●Sleeve package
Package materials
Sleeve : Polystyrene
Stopper : Styrene-Butadiene
Aluminum laminated bag : Nylone, Polyethylene, Aluminum
Package method
MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless
stoppers.
MAX. 40 sleeves in one case.
Color of sleeve
Rank classifi cation is distinguished by the color of the sleeve as shown in the table below.
But the ratio of each rank can not be guaranteed.
Rank Color of sleeve
A Yellow
B Transparent
C Green
●Tape and Reel package
Package materials
Carrier tape : A-PET (with anti-static material)
Cover tape : PET (three layer system)
Reel : PS
Package method
1 000 pcs of products shall be packaged in a reel. One reel with silicagel is encased in aluminum laminated
bag. After sealing up the bag, it encased in one case (5 bags/case).
13
Sheet No.: D3-A01901EN
GP2S27J0000F Series
Carrier tape structure and Dimensions
Reel structure and Dimensions
Direction of product insertion
[Packing : 1 000pcs/reel]
Storage method
Storage conditions should follow the condition shown below.
Storage temperature : 5 to 30˚C
Storage hunidity : 70%RH or less
FG
J
E K
C
I
A
D
B
I
H
M
5˚MAX.
Dimensions List (Unit : mm)
A
12±0.3
C
5.5±0.05
D
1.75±0.1
E
8±0.1
H
φ1.5+0.1
−0
I
4.4±0.1
J
0.3±0.05
K
2±0.1
L
5.2±0.1
M
φ1.6+0.1
−0
F
2±0.05
G
4±0.1
B
7.6+0.3
−0
a
c
e
g
d
Dimensions List (Unit : mm)
a
180
b
13±0.8
c
60+0.5
−0
d
13±0.2
e
21±0.8
f
15.4±1
g
2+0.3
−0
f
b
Pull-out direction
14
Sheet No.: D3-A01901EN
GP2S27J0000F Series
■Important Notices
· The circuit application examples in this publication
are provided to explain representative applications of
SHARP devices and are not intended to guarantee any
circuit design or license any intellectual property rights.
SHARP takes no responsibility for any problems related
to any intellectual property right of a third party resulting
from the use of SHARP's devices.
· Contact SHARP in order to obtain the latest device
specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the
specifi cations, characteristics, data, materials, structure,
and other contents described herein at any time
without notice in order to improve design or reliability.
Manufacturing locations are also subject to change
without notice.
· Observe the following points when using any devices
in this publication. SHARP takes no responsibility for
damage caused by improper use of the devices which
does not meet the conditions and absolute maximum
ratings to be used specifi ed in the relevant specifi cation
sheet nor meet the following conditions:
(i) The devices in this publication are designed for use
in general electronic equipment designs such as:
--- Personal computers
--- Offi ce automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii) Measures such as fail-safe function and redundant
design should be taken to ensure reliability and safety
when SHARP devices are used for or in connection
with equipment that requires higher reliability such as:
--- Transportation control and safety equipment (i.e.,
aircraft, trains, automobiles, etc.)
--- Traffi c signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g.,
scuba).
· If the SHARP devices listed in this publication fall
within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Law of Japan, it
is necessary to obtain approval to export such SHARP
devices.
· This publication is the proprietary product of SHARP
and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be
reproduced or transmitted in any form or by any means,
electronic or mechanical, for any purpose, in whole or in
part, without the express written permission of SHARP.
Express written permission is also required before any
use of this publication may be made by a third party.
· Contact and consult with a SHARP representative
if there are any questions about the contents of this
publication.
[H144]
