[ /Title (RFP3 0N06L E, RF1S3 0N06L ESM) /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49027. April 1999 File Number Features * 30A, 60V * rDS(ON) = 0.047 * 2kV ESD Protected * Temperature Compensating PSPICETM Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol Ordering Information PART NUMBER 3629.2 D PACKAGE BRAND RFP30N06LE TO-220AB F30N06LE RF1S30N06LESM TO-263AB 1S30N06L G NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-260 DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICETM is a trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP30N06LE, RF1S30N06LESM Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFP30N06LE, RF1S30N06LESM 60 60 +10, -8 30 Refer to Peak Current Curve Refer to UIS Curve 96 0.645 2 -55 to 175 UNITS V V V A 300 260 oC oC W W/oC kV oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER SYMBOL BVDSS ID = 250A, VGS = 0V, Figure 11 60 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250A, Figure 10 1 - 2 V VDS = Rated BVDSS, VGS = 0 - - 25 A VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150oC - - 250 A VGS = +10, -8V - - 10 A Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IGSS rDS(ON) Turn-On Time tON Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge TEST CONDITIONS ID = 30A, VGS = 5V, Figure 9 - - 0.047 VDD = 30V, ID = 30A, RL = 1, VGS = 5V, RGS = 2.5, Figures 13, 16, 17 - - 140 ns - 11 - ns tr - 88 - ns td(OFF) - 30 - ns tf - 40 - ns tOFF - - 100 ns - 51 62 nC Qg(TOT) VGS = 0V to 10V Qg(5) VGS = 0V to 5V Qg(TH) VGS = 0V to 1V Gate Charge at 5V Threshold Gate Charge Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDD = 48V, ID = 30A, RL = 1.6 Figures 18, 19 VDS = 25V, VGS = 0V, f = 1MHz Figure 12 - 28 34 nC - 1.8 2.6 nC - 1350 - pF - 290 - pF - 85 - pF Thermal Resistance Junction to Case RJC - - 1.55 oC/W Thermal Resistance Junction to Ambient RJA - - 80 oC/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 30A - - 1.5 V ISD = 30A, dISD/dt = 100A/s - - 125 ns NOTES: 2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). 6-261 RFP30N06LE, RF1S30N06LESM Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 40 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 30 20 10 0.2 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 0 25 175 150 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 ZJC , NORMALIZED THERMAL IMPEDANCE 0.5 0.2 PDM 0.1 0.1 t1 0.05 t2 0.02 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 10-5 10-4 10-2 10-3 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = 25oC TJ = MAX RATED ID , DRAIN CURRENT (A) 100 100ms 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms 100ms DC 1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 6-262 100 500 IDM , PEAK CURRENT CAPABILITY (A) 200 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - T c I = I 25 ----------------------- 150 VGS = 5V TC = 25oC 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 20 10-6 10-5 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 FIGURE 5. PEAK CURRENT CAPABILITY 101 RFP30N06LE, RF1S30N06LESM Typical Performance Curves Unless Otherwise Specified (Continued) 100 TC = 25oC STARTING TJ = 150oC 10 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 VGS = 5V 1 0.1 tAV, TIME IN AVALANCHE (ms) VGS = 4.5V 60 VGS = 4V 40 VGS = 3V 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. 10 0 0 1.5 4.5 3.0 6.0 VDS , DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Intersil Application Notes AN9321 and AN9322. 100 3.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. 80 -55oC 60 25oC 175oC 40 20 VDD = 15V 6.0 1.5 3.0 4.5 VGS , GATE TO SOURCE VOLTAGE (V) 0 2.5 2.0 1.5 1.0 0.5 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A 1.5 1.0 0.5 0 -80 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. VGS = 5V, ID = 30A 0 -80 7.5 FIGURE 8. TRANSFER CHARACTERISTICS NORMALIZED GATE THRESHOLD VOLTAGE 7.5 FIGURE 7. SATURATION CHARACTERISTICS NORMALIZED DRAIN TO SOURCE ON RESISTANCE IDS(ON) , DRAIN TO SOURCE CURRENT (A) FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING 0 VGS = 10V 80 ID , DRAIN CURRENT (A) IAS , AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC -40 160 120 0 40 80 TJ , JUNCTION TEMPERATURE (oC) 200 FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 6-263 ID = 250A 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE RFP30N06LE, RF1S30N06LESM Typical Performance Curves VDS , DRAIN TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 2000 CISS 1500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1000 COSS 500 CRSS 5.0 60 VDD = BVDSS 3.75 2.5 30 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS 15 10 15 20 5 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 1.25 RL = 2.0 IG(REF) = 0.62mA VGS = 5V 0 0 20 0 VDD = BVDSS 45 25 IG(REF) IG(ACT) t, TIME (s) 80 VGS , GATE TO SOURCE VOLTAGE (V) Unless Otherwise Specified (Continued) IG(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS + RG VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) VDS VDS VGS tf tr RL 90% 90% + VGS - 10% 10% 0 0V RGS 90% DUT VGS 0 FIGURE 16. SWITCHING TIME TEST CIRCUIT 6-264 10% 50% 50% PULSE WIDTH FIGURE 17. RESISTIVE SWITCHING WAVEFORMS RFP30N06LE, RF1S30N06LESM Test Circuits and Waveforms (Continued) VDS VDD RL Qg(TOT) VDS VGS = 10V VGS Qg(5) + VDD DUT VGS = 5V VGS - VGS = 1V 0 IG(REF) Qg(TH) IG(REF) 0 FIGURE 18. GATE CHARGE TEST CIRCUIT 6-265 FIGURE 19. GATE CHARGE WAVEFORMS RFP30N06LE, RF1S30N06LESM PSPICE Electrical Model SUBCKT RFP30N06LE 2 1 3; CA 12 8 1 3.34e-9 CB 15 14 3.44e-9 CIN 6 8 0 1.343e-9 rev 6/2/93 DPLCAP DRAIN 2 LDRAIN 5 10 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD RSCL2 5 51 - GATE 1 EVTO 20 + 18 8 LGATE RGATE 91 VTO + 11 EBREAK + 17 18 DBODY - 16 21 6 9 MOS2 MOS1 RIN DESD1 LDRAIN 2 5 1e-9 LGATE 1 9 7.22e-9 LSOURCE 3 7 6.31e-9 ESCL RDRAIN + IT 8 17 1 DBREAK 50 6 8 ESG EBREAK 11 7 17 18 75.39 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 RSCL1 + 51 CIN 8 DESD2 LSOURCE RSOURCE 3 7 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 11.86e-3 RGATE 9 20 2.52 RIN 6 8 1e9 RSCL1 5 51 RSLVCMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 26.6e-3 RVTO 18 19 RVTOMOD 1 S2A S1A 12 13 8 S1B RBREAK 15 14 13 17 18 S2B 13 CA RVTO CB + EGS - 14 + 6 8 EDS - IT 5 8 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.5 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7)) .MODEL DBDMOD D (IS = 3.80e-13 RS = 1.12e-2 TRS1 = 1.61e-3 TRS2 = 6.08e-6 CJO = 1.05e-9 TT = 3.84e-8) .MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5) .MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0) .MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7) .MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5) .MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6) .MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records 1991. 6-266 SOURCE 19 VBAT + RFP30N06LE, RF1S30N06LESM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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