AP4409AGEM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D D Low On-resistance D D Fast Switching Characteristic G SO-8 S S BVDSS -35V RDS(ON) 7.5m ID -14.5A S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units -35 V 20 V 3a -14.5 A 3a -12 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -50 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3a Value Unit 50 /W 1 200801091 AP4409AGEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units -35 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A - - 7.5 m VGS=-4V, ID=-7A - - 15 m Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-7A - 7 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS=20V - - 30 uA ID=-14A - 58 90 nC VGS(th) IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-30V - 7 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 37 - nC VDS=-15V - 15 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 13 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 76 - ns tf Fall Time RD=15 - 60 - ns Ciss Input Capacitance VGS=0V - 4100 6600 pF Coss Output Capacitance VDS=-25V - 640 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 530 - pF Min. Typ. IS=-14A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-14A, VGS=0V, - 46 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 44 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board a, t <10sec (a) 1 in 2 pad of 2 oz copper (b) 125/W when mounted on a 0.003 2 in pad of 2 oz copper THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP4409AGEM 50 50 o T A = 25 C V G = - 3.0 V 30 20 V G = - 3.0 V 30 20 10 10 0 0 0 1 2 3 0 4 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 18 ID=-7A T A =25 I D =-7A V G =-10V Normalized RDS(ON) 16 RDS(ON\) (m) -10V - 7.0 V - 5.0 V - 4.5 V 40 -ID , Drain Current (A) 40 -ID , Drain Current (A) o T A = 150 C - 10V -7.0 V -5.0 V -4.5 V 14 12 10 1.4 1.0 8 0.6 6 2 4 6 8 10 -50 0 50 100 150 o -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 10 8 Normalized -VGS(th) (V) 1.4 o o T j =150 C T j =25 C -IS(A) 6 4 1.0 0.6 2 0.2 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4409AGEM ID= -14A V DS = - 30 V 12 C iss C (pF) -VGS , Gate to Source Voltage (V) f=1.0MHz 10000 16 8 1000 C oss C rss 4 100 0 0 30 60 90 1 120 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 1ms 10 10ms -ID (A) 1 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=125oC/W Single Pulse 0.001 0.01 0.1 1 10 100 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D 8 7 Millimeters 6 5 E1 1 2 3 E 4 e SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 0 4.00 8.00 1.27 TYP e B A A1 DETAIL A L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. c DETAIL A Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4409AGEM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5