DATA SH EET
Product specification
Supersedes data of 1997 Jun 02 1999 Apr 14
DISCRETE SEMICONDUCTORS
PZT2907A
PNP switching transistor
handbook, halfpage
M3D087
1999 Apr 14 2
Philips Semiconductors Product specification
PNP switching transistor PZT2907A
FEATURES
High current (max. 600 mA)
Low voltage (max. 60 V).
APPLICATIONS
Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
123
MAM288
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−60 V
VCEO collector-emitter voltage open base −−60 V
VEBO emitter-base voltage open collector −−5V
I
Ccollector current (DC) −−600 mA
ICM peak collector current −−800 mA
IBM peak base current −−200 mA
Ptot total power dissipation Tamb 25 °C1.15 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 14 3
Philips Semiconductors Product specification
PNP switching transistor PZT2907A
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 106 K/W
Rth j-s thermal resistance from junction to soldering point 25 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =50 V −−10 nA
IE= 0; VCB =50 V; Tamb = 150 °C−−10 µA
IEBO emitter cut-off current IC= 0; VEB =5V −−50 nA
hFE DC current gain IC=0.1 mA; VCE =10 V 75
IC=1 mA; VCE =10 V 100
IC=10 mA; VCE =10 V 100
IC=150 mA; VCE =10 V; note 1 100 300
IC=500 mA; VCE =10 V; note 1 50
VCEsat collector-emitter saturation voltage IC=150 mA; IB=15 mA; note 1 −−400 mV
IC=500 mA; IB=50 mA; note 1 −−1.6 V
VBEsat base-emitter saturation voltage IC=150 mA; IB=15 mA; note 1 −−1.3 V
IC=500 mA; IB=50 mA; note 1 −−2.6 V
Cccollector capacitance IE=i
e= 0; VCB =10 V; f = 1 MHz 8pF
C
eemitter capacitance IC=i
c= 0; VEB =2 V; f = 1 MHz 30 pF
fTtransition frequency IC=50 mA; VCE =20 V;
f = 100 MHz; note 1 200 MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton turn-on time ICon =150 mA; IBon =15 mA;
IBoff =15mA 40 ns
tddelay time 12 ns
trrise time 30 ns
toff turn-off time 365 ns
tsstorage time 300 ns
tffall time 65 ns
1999 Apr 14 4
Philips Semiconductors Product specification
PNP switching transistor PZT2907A
Fig.2 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
VBB
Vi
VCC
Vi=9.5 V; T = 500 µs; tp=10µs; tr=t
f3 ns.
R1 = 68 ; R2 = 325 ; RB= 325 ; RC= 160 .
VBB = 3.5 V; VCC =29.5 V.
Oscilloscope input impedance Zi=50.
1999 Apr 14 5
Philips Semiconductors Product specification
PNP switching transistor PZT2907A
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 96-11-11
97-02-28
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
1999 Apr 14 6
Philips Semiconductors Product specification
PNP switching transistor PZT2907A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 14 7
Philips Semiconductors Product specification
PNP switching transistor PZT2907A
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 14 Document order number: 9397 750 05637