DYNAMIC CHARACTERISTICS APT8014L2LL
050-7103 Rev A 12-2003
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.37mH, RG = 25Ω, Peak IL = 52A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID52A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID52A)
Reverse Recovery Time (IS = -ID52A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID52A, dlS/dt = 100A/µs)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
µC
V/ns
MIN TYP MAX
52
208
1.3
930
29 10
Symbol
RθJC
RθJA
MIN TYP MAX
0.14
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
IS
ISM
VSD
t rr
Q rr
dv/dt
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
MIN TYP MAX
7238
1402
248
285
30
170
20
19
69
15
1091
1135
1662
1383
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 52A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 52A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 52A, RG = 1.7Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 533V, VGS = 15V
ID = 52A, RG = 1.7Ω