A1266 Micropower Ultrasensitive 3D Hall-Effect Switch FEATURES AND BENEFITS DESCRIPTION * * * * * * The A1266 integrated circuit is an ultrasensitive Hall-effect switch with 3D omnipolar magnetic actuation. The single silicon chip includes: three Hall plates, multiplexer, smallsignal amplifier, chopper stabilization, Schmitt trigger, and NMOS output transistors. The device outputs turn on when a magnetic field of sufficient strength is applied to the sensor in any orientation. Removal of the magnetic field will turn the output off. True 3D sensing Omnipolar operation with either north or south pole 2.5 to 5.5 V operation Low supply current High sensitivity, BOP typically 25G Chopper-stabilized offset cancellation Superior temperature stability Extremely low switch point drift Insensitive to physical stress * Solid-state reliability * Choice of output format Separate X, Y, and Z outputs Combined (X+Y+Z) output * Tiny SOT-23 packages PACKAGES: 5-Pin SOT23-W 3-Pin SOT23-W Two versions of the A1266 offer a choice of output format: separate X, Y, and Z outputs, or a combined X+Y+Z output. The low operating supply voltage, 2.5 to 5.5V, and unique clocking algorithm assist in reducing the average power consumption, making it ideal for battery operation (e.g., the power consumption is less than 25W with a 3.3V supply). The small geometries of the BiCMOS process allow for ultrasmall packages suitable for even space-constrained applications. In this case, a modified SOT23-W surface-mount package is available in a 3-pin (combined output) or a 5-pin (separate outputs) configuration, magnetically optimized for use in a variety of orientations. The packages are lead (Pb) free and RoHS-compliant, with 100% matte-tin leadframe plating. Not to scale VDD Y Hall Z Hall Low-Pass Filter Hall Amp. Sample, Hold & Averaging Note for Pin Designations: Triple-Output (Single Output) Options OUTX (OUT) Demultiplexer X Hall Dynamic Offset Cancellation To All Subcircuits OUTY (n/a) Output Logic OUTZ (n/a) GND Functional Block Diagram A1266-DS, Rev. 6 MCO-0000135 February 4, 2020 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch SELECTION GUIDE Part Number Packing Package Description A1266ELHLT-T 7-in. reel, 3000 pieces/reel 5-pin SOT23-W 3 Outputs of X, Y, and Z A1266ELHLX-T 13-in. reel, 10000 pieces/reel 5-pin SOT23-W 3 Outputs of X, Y, and Z A1266ELHLT-SO3-T 7-in. reel, 3000 pieces/reel 3-pin SOT23-W Single Output of OR (X, Y, and Z) A1266ELHLX-SO3-T 13-in. reel, 10000 pieces/reel 3-pin SOT23-W Single Output of OR (X, Y, and Z) A1266ELHLT-SO-T* 7-in. reel, 3000 pieces/reel 5-pin SOT23-W Single Output of OR (X, Y, and Z) A1266ELHLX-SO-T* 13-in. reel, 10000 pieces/reel 5-pin SOT23-W Single Output of OR (X, Y, and Z) * These parts are in production but have been determined to be NOT FOR NEW DESIGN.This classification indicates that sale of this device is currently restricted to existing customer applications. Samples are no longer available. RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Notes Rating Unit Forward Supply Voltage VDD 5.5 V Reverse Supply Voltage VRDD -0.3 V B Unlimited G Output Off Voltage Magnetic Flux Density VOUT 5.5 V Reverse Output Voltage VROUT -0.3 V Continuous Output Current IOUT 3 mA Reverse Output Current IROUT -3 mA -40 to 85 C Operating Ambient Temperature TA Maximum Junction Temperature TJ(MAX) 165 C Tstg -65 to 170 C Storage Temperature Range E Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 2 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch PINOUT DIAGRAMS AND TERMINAL LIST TABLE VDD OUTX 1 2 5 OUTZ 4 GND 3 OUTY VDD 1 OUT 2 A1266ELHLT-T, A1266ELHLX-T Pinouts 5 NC 4 GND 3 NC VDD 1 3 OUT GND 2 A1266ELHLT-SO-T, A1266ELHLX-SO-T Pinouts A1266ELHLT-SO3-T, A1266ELHLX-SO3-T Pinouts Terminal List Table Pin Number A1266ELHLT-T, A1266ELHLX-T Symbol VDD 2 3 Description Symbol Description Power Supply VDD Power Supply OUTX Output of X magnetic field direction OUT OUTY Output of Y magnetic field direction NC 4 GND Ground 5 OUTZ Output of Z magnetic field direction GND NC A1266ELHLT-SO3-T, A1266ELHLX-SO3-T Symbol Description VDD Power Supply X+Y+Z Output OUT X+Y+Z output No connection GND Ground Ground - - No connection - - 1 Y X 1 A1266ELHLT-SO-T, A1266ELHLH-SO-T Z Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 3 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch THERMAL CHARACTERISTICS A1266 power consumption is extremely low. On-chip power dissipation will not be an issue under normal operating conditions. Characteristic Symbol Notes RJA Power Dissipation, P D (mW ) Package Thermal Resistance 1900 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 Rating Unit Package LH-3, 2-layer PCB with 0.463 in.2 of copper area, each side connected by thermal vias 110 C/W Package LH-5, 4-layer board based on the JEDEC standard. 124 C/W 2- La ye r (R PCB ,P J A = 4-L 11 ack ay 0 ag er C/ e W LH (R PCB ) -3 , J Pa A = 12 cka 4C ge /W LH -5 ) 20 40 60 80 100 120 140 160 180 Temperature (C) Maximum Power Dissipation versus Ambient Temperature Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 4 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch ELECTRICAL CHARACTERISTICS: Valid over VDD = 2.5 to 5 V and full operating temperature range, unless otherwise specified Characteristics Supply Voltage Output Leakage Current Output On Voltage Symbol VDD Test Conditions Operating, TJ < 165C IOUTOFF VOUT(SAT) Min. Typ. [1] Max. Unit 2.5 3.3 5.5 V B < BRP - - 10 A IOUT = 2 mA, B > BOP - 50 500 mV Awake Time tawake - 300 - s Mode Cycle Period tperiod - 165 - ms fC - 800 - kHz - 3.6 mA Chopping Frequency Supply Current IDD(EN) Chip Awake (Enabled) - IDD(DIS) Chip Asleep (Disabled), VDD = 2.5 V, TA = 25C - - 15 A VDD = 2.5 V, TA = 25C - 7.8 21 A VDD = 5 V, TA = 25C - 9.5 40 A IDD(AVG) MAGNETIC CHARACTERISTICS: Valid over VDD = 2.5 to 5 V and full operating temperature range, unless otherwise specified Characteristics Operate Point [3] Release Point [3] Hysteresis [3] Symbol Test Conditions Min. Typ. Max. Unit [2] BOPS South pole to left, bottom, or branded face side (see Figure 1) - 25 40 G BOPN North pole to left, bottom, or branded face side (see Figure 1) -40 -25 - G BRPS South pole to left, bottom, or branded face side (see Figure 1) 5 17.5 - G BRPN North pole to left, bottom, or branded face side (see Figure 1) - -17.5 -5 G BHYS BOPS - BRPS, BOPN - BRPN - 7.5 - G N S S S N Y X N Z Figure 1: Three Dimensions of Magnet Orientation. Applied field may be either north or south polarity. Typical data are at TA = 25C and VDD = 3.3 V (unless otherwise noted). 1 G (gauss) = 0.1 mT (millitesla) [3] Applicable to all directions (X, Y, and Z) [1] [2] Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 5 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch 40 40 35 35 30 TA(C) 25 -40 20 25 15 85 10 IDD(AVG) (A) IDD(AVG) (A) CHARACTERISTIC DATA 5 VDD(V) 25 2.5 20 3.3 15 5 10 5 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -40 -60 -20 0 40 60 80 100 TA (C) Average Supply Current vs. Supply Voltage Average Supply Current vs. Ambient Temperature 350 25 300 85 250 Y and Z 200 -40 150 25 100 85 500 VOUT(SAT) (mV) 400 TA(C) X Output -40 450 50 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 450 VDD(V) X Output 400 2.5 350 3.3 300 5 250 Y and Z 200 150 2.5 100 3.3 50 0 5 5.5 -60 -40 -20 0 VDD (V) 20 40 60 80 100 TA (C) Average Low Output Voltage vs. Ambient Temperature Average Low Output Voltage vs. Supply Voltage IOUT = 20 mA 300 300 250 250 TA(C) 200 -40 150 25 100 85 50 tPERIOD (ms) tPERIOD (ms) 20 VDD (V) 500 VOUT(SAT) (mV) 30 VDD(V) 200 2.5 150 3.3 100 5 50 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average Period vs. Supply Voltage Average Period vs. Ambient Temperature Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 6 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch 40 10 25 85 0 -10 BOPN -40 -20 25 -30 85 2.0 2.5 3.0 3.5 4.0 VDD (V) 4.5 5.0 5.5 40 3.3 0 BOPN -10 5 2.5 -20 3.3 -30 5 -60 -40 -20 0 20 TA (C) 40 60 80 100 40 VDD(V) BOPS 30 20 -40 20 2.5 10 25 10 3.3 85 0 5 0 -10 BOPN -40 -10 2.5 -20 25 -20 3.3 -30 85 -30 5 -40 BOPN -40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average Y-Axis Operate Point vs. Supply Voltage Average Y-Axis Operate Point vs. Ambient Temperature 40 40 TA(C) BOPS 30 VDD(V) BOPS 30 20 -40 20 2.5 10 25 10 3.3 85 0 BOP (G) BOP (G) 2.5 10 Average X-Axis Operate Point vs. Ambient Temperature TA(C) BOPS 30 20 -40 Average X-Axis Operate Point vs. Supply Voltage BOP (G) BOP (G) -40 VDD(V) BOPS 30 BOP (G) BOP (G) 20 -40 40 TA(C) BOPS 30 5 0 -10 BOPN -40 -10 2.5 -20 25 -20 3.3 -30 85 -30 5 -40 BOPN -40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average Z-Axis Operate Point vs. Supply Voltage Average Z-Axis Operate Point vs. Ambient Temperature Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 7 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch 40 20 -40 20 2.5 10 25 10 3.3 85 0 -10 -10 2.5 -20 25 -20 3.3 -30 85 -30 BRPN 5 -40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average X-Axis Release Point vs. Supply Voltage Average X-Axis Release Point vs. Ambient Temperature 40 40 TA(C) BRPS 30 VDD(V) BRPS 30 20 -40 20 2.5 10 25 10 3.3 85 0 BRP (G) BRP (G) 5 0 BRPN -40 -40 5 0 BRPN -10 BRPN -40 -10 2.5 -20 25 -20 3.3 -30 85 -30 5 -40 -40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -60 5.5 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average Y-Axis Release Point vs. Supply Voltage Average Y-Axis Release Point vs. Ambient Temperature 40 40 TA(C) BRPS 30 VDD(V) BRPS 30 20 -40 20 2.5 10 25 10 3.3 85 0 BRP (G) BRP (G) VDD(V) BRPS 30 BRP (G) BRP (G) 40 TA(C) BRPS 30 5 0 -10 BRPN -40 -10 2.5 -20 25 -20 3.3 -30 85 -30 5 -40 BRPN -40 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average Z-Axis Release Point vs. Supply Voltage Average Z-Axis Release Point vs. Ambient Temperature Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 8 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch 20 16 16 10 BHYS(N) -40 8 6 BHYS (G) 85 25 4 2.0 2.5 3.0 3.5 5 10 BHYS(N) 8 2.5 6 3.3 4.0 4.5 5.0 5 2 0 5.5 -60 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average X-Axis Hysteresis vs. Supply Voltage Average X-Axis Hysteresis vs. Ambient Temperature 20 20 TA(C) BHYS(S) 18 16 16 10 BHYS(N) -40 8 6 BHYS (G) 85 2.5 14 25 12 VDD(V) BHYS(S) 18 -40 14 BHYS (G) 3.3 12 4 85 2 0 25 4 3.3 12 5 10 BHYS(N) 8 2.5 6 3.3 4 85 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 2 0 5.5 -60 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average Y-Axis Hysteresis vs. Supply Voltage Average Y-Axis Hysteresis vs. Ambient Temperature 20 20 TA(C) BHYS(S) 18 16 10 BHYS(N) -40 8 6 25 4 BHYS (G) 85 2.5 14 25 12 VDD(V) BHYS(S) 18 16 -40 14 BHYS (G) 2.5 14 25 12 VDD(V) BHYS(S) 18 -40 14 BHYS (G) 20 TA(C) BHYS(S) 18 3.3 12 5 10 BHYS(N) 8 2.5 6 3.3 4 85 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5 2 0 -60 -40 -20 0 20 40 60 80 100 VDD (V) TA (C) Average Z-Axis Hysteresis vs. Supply Voltage Average Z-Axis Hysteresis vs. Ambient Temperature Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 9 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch FUNCTIONAL DESCRIPTION Device Power-On tawake X Axis Sleep tawake Y Axis Sleep tawake Z Axis Sleep tawake = 300 s [tawake(X) + tawake(Y) + tawake(Z)] tperiod = 165 ms (tawake + 3 x tsleep) tsleep = (tperiod - tawake)/3 tsleep = 54.9 ms tperiod Awake IDD(EN) Sleep IDD(DIS) Latch Output Sample X Latch Output Sample Y Latch Output Sample Z Latch Output Sample X Figure 2: Device Sleep and Awake Mode Cycle Low Average Power To keep average power low, internal timing circuitry activates the sensor of each axis for 100s (followed by a low power sleep time, tsleep, of 54.9ms). This awake and sleep cycle occurs three times for each tperiod, such that all three axes are sampled in tperiod. The short "awake" time allows for stabilization prior to the sensor sampling and data latching at the end of each tawake cycle. The outputs during each tsleep cycle are latched in the last sampled state. The supply current is not affected by the output states. Operation For the single output option of the A1266, the output switches low (turns on) when a magnetic field perpendicular to one of the three Hall sensors, either the X, Y, or Z direction, exceeds the operate point, BOPS (or is less than BOPN). The A1266 triple output option is configured with three separate outputs (X, Y, or Z), which switch low (turns on) when a magnetic field perpendicular to the corresponding Hall sensor (X, Y, or Z) exceeds the operate point, BOPS (or is less than BOPN). When the magnetic field is reduced below the release point, BRPS (or increased above BRPN), the device output switches high (turns off). The difference in the magnetic operate and release points is the hysteresis, BHYS, of the device. This built-in hysteresis allows clean switching of the output even in the presence of external mechanical vibration and electrical noise. After turn-on, the output voltage is VOUT. Powering-on the device in the hysteresis region, between BOP and BRP, allows an indeterminate output state. The correct state is attained after the first excursion beyond BOP or BRP. Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 10 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch V+ Switch to High Switch to High BRPS BRPN VOUT BHYS 0 VOUT(SAT) BOPS BOPN B- Switch to Low Switch to Low 0 VOUT(HIGH) B+ BHYS Figure 3: Switching Behavior of Omnipolar Switches On the horizontal axis, the B+ direction indicates increasing south polarity magnetic field strength, and the B- direction indicates decreasing south polarity field strength (including the case of increasing north polarity) Applications It is strongly recommended that an external capacitor is connected (in close proximity to the Hall sensor IC) between the supply and ground of the device to reduce both external noise and noise generated by the chopper-stabilization technique. As shown in Figure 4, a 0.1F capacitor is typical. Extensive applications information on magnets and Hall-effect sensors is available in: * Hall-Effect IC Applications Guide, AN27701, * Hall-Effect Devices: Guidelines for Designing Subassemblies Using Hall-Effect Devices AN27703.1 * Soldering Methods for Allegro's Products - SMD and Through-Hole, AN26009 All are provided on the Allegro website: www.allegromicro.com Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 11 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch Typical Application Circuits A1266ELHLT-SO3-T, A1266ELHLX-SO3-T, A1266ELHLT-SO-T, AND A1266ELHLX-SO-T For sensors configured with the single output option, one pin reports the output state from any of the three Hall elements. VS VDD RLOAD A1266 CBYP 0.1 F Sensor Output OUT GND GND Figure 4: Typical Application Circuit for the Single Output Selection A1266ELHLT-T AND A1266ELHLX-T For sensors configured with the triple output option, the three separate open drain outputs report the output state from the corresponding Hall elements. VS RLOAD VDD CBYP 0.1 F RLOAD RLOAD A1266 OUTX Sensor Outputs OUTY OUTZ GND GND Figure 5: Typical Application Circuit for the Triple Output Selection Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 12 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch Chopper Stabilization A limiting factor for switch point accuracy when using Halleffect technology is the small signal voltage developed across the Hall plate. This voltage is proportionally small relative to the offset that can be produced at the output of the Hall sensor. This makes it difficult to process the signal and maintain an accurate, reliable output over the specified temperature and voltage range. Chopper stabilization is a proven approach used to minimize Hall offset. The Allegro technique, dynamic quadrature offset cancellation, removes key sources of the output drift induced by temperature and package stress. This offset reduction technique is based on a signal modulation-demodulation process. Figure 6 illustrates how it is implemented. The undesired offset signal is separated from the magnetically induced signal in the frequency domain through modulation. The subsequent demodulation acts as a modulation process for the offset, causing the magnetically induced signal to recover its original spectrum at baseband while the DC offset becomes a highfrequency signal. Then, using a low-pass filter, the signal passes while the modulated DC offset is suppressed. Allegro's innovative chopper-stabilization technique uses a high-frequency clock. The high-frequency operation allows a greater sampling rate that produces higher accuracy, reduced jitter, and faster signal processing. Additionally, filtering is more effective and results in a lower noise analog signal at the sensor output. Devices such as the A1266 that use this approach have an extremely stable quiescent Hall output voltage, are immune to thermal stress, and have precise recoverability after temperature cycling. This technique is made possible through the use of a BiCMOS process, which allows the use of low-offset, low-noise amplifiers in combination with high-density logic and sample-and-hold circuits. Multiplexer VDD Low-Pass Filter Amp. Sample, Hold & Averaging Figure 6: Model of Chopper-Stabilization Circuit (Dynamic Offset Cancellation) Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 13 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch PACKAGE OUTLINE DRAWINGS For Reference Only - Not for Tooling Use (Reference DWG-9069) Dimensions in millimeters - NOT TO SCALE Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown AY +0.12 2.98 -0.08 D 0.11 REF 2.90 4 4 AZ AX 5 +0.020 0.180 -0.053 E1 D E1 D +0.10 -0.20 1.91 +0.19 -0.06 E3 D D E2 1 0.17 D REF 2 E2 D 0.25 MIN D E3 0.55 REF E3 D 0.25 BSC Branded Face SEATING PLANE GAUGE PLANE 8X 12 REF 1.00 0.13 D E2 +0.10 0.05 -0.05 0.40 0.10 0.95 BSC E1 D 0.20 MIN NNN C Standard Branding Reference View NNN = Last three digits of device part number 2.40 AX Active Area Depth, X Axis, 1.49 0.2 AY Active Area Depth, Y Axis, 1.45 0.15 1.00 AZ Active Area Depth, Z Axis, 0.28 0.04 0.70 B 0.95 PCB Reference Layout View B Reference land pattern layout; all pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances C Branding Scale and appearance at supplier discretion D Hall Elements (E1, E2, and E3), not to scale Figure 7: Package LH, 5-Pin SOT23-W Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 14 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch For Reference Only - Not for Tooling Use (Reference DWG-2840) Dimensions in millimeters - NOT TO SCALE Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown +0.12 2.98 -0.08 AY 4 4 AZ AX +0.020 0.180 -0.053 3 D 0.11 REF 2.90 E1 D E1 D +0.10 -0.20 1.91 +0.19 -0.06 E3 D D E2 1 0.17 D REF 2 E2 D 0.25 MIN D E3 0.55 REF E3 D 0.25 BSC Branded Face SEATING PLANE GAUGE PLANE 8X 12 REF 1.00 0.13 D E2 +0.10 0.05 -0.05 0.40 0.10 0.95 BSC E1 D NNN C Standard Branding Reference View NNN = Last three digits of device part number 2.40 AX Active Area Depth, X Axis, 1.49 0.2 AY Active Area Depth, Y Axis, 1.45 0.15 1.00 AZ Active Area Depth, Z Axis, 0.28 0.04 0.70 0.95 B PCB Reference Layout View B Reference land pattern layout; all pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances C Branding Scale and appearance at supplier discretion D Hall Elements (E1, E2, and E3), not to scale Figure 8: Package LH, 3-Pin SOT23-W Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 15 A1266 Micropower Ultrasensitive 3D Hall-Effect Switch Revision History Number Date Description - March 20, 2015 1 May 5, 2015 2 September 22, 2015 3 January 9, 2017 Updated product offering (pages 2, 3, 12) 4 April 10, 2017 Updated package drawings (pages 14-15) 5 January 23, 2019 Minor editorial updates 6 February 4, 2020 Minor editorial updates Initial Release Revised IDD(EN) value and Figure 1 Added 3-pin SOT23-W package option and included explicit Active Area Depth for 3D sensor in both package drawings; revised IDD(AVG) values and Figure 1; revised pin labels in Functional Block Diagram Copyright 2020, Allegro MicroSystems. Allegro MicroSystems reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro's products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro's product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. Copies of this document are considered uncontrolled documents. For the latest version of this document, visit our website: www.allegromicro.com Allegro MicroSystems 955 Perimeter Road Manchester, NH 03103-3353 U.S.A. www.allegromicro.com 16