1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH.
1.2 Features
■Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of
900 mA:
◆Load power = 25 W (AV)
◆Gain = 13.5 dB (typ)
◆Efficiency = 26 % (typ)
◆ACPR = −41 dBc (typ)
◆IMD3 = −37 dBc (typ)
■Easy power control
■Integrated ESD protection
■Excellent ruggedness > 10 : 1 VSWR at 100 W CW
■High efficiency
■High peak power capability (> 150 W)
■Excellent thermal stability
■Designed for broadband operation (2000 MHz to 2200 MHz)
■Internally matched for ease of use
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Rev. 01 — 10 January 2006 Product data sheet
Table 1: Typical performance
T
case
=25
°
C; in a common source class-AB test circuit; I
Dq
= 900 mA; typical values
Mode of operation f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) IMD3
(dBc) ACPR
(dBc)
2-carrier
W-CDMA[1] f1= 2135; f2= 2145 28 25 (AV) 13.5 26 −37 −41
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 2 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
1.3 Applications
■RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
[1] Connected to flange
3. Ordering information
4. Limiting values
Table 2: Pinning
Pin Description Simplified outline Symbol
BLF4G22-100 (SOT502A)
1 drain
2 gate
3 source [1]
BLF4G22S-100 (SOT502B)
1 drain
2 gate
3 source [1]
3
2
11
3
2
sym039
3
2
11
3
2
sym039
Table 3: Ordering information
Type number Package
Name Description Version
BLF4G22-100 - flanged LDMOST ceramic package; 2 mounting
holes; 2 leads SOT502A
BLF4G22S-100 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +15 V
IDdrain current - 12 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 3 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch
corresponding to VSWR > 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 900 mA; PL= 100 W (CW).
Table 5: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-case) thermal resistance from
junction to case Tcase =80°C;
PL= 25 W;
2-carrier W-CDMA
- 0.76 0.85 K/W
Table 6: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 0.9 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10V; I
D= 180 mA 2.5 3.1 3.5 V
VGSq gate-source quiescent voltage VDS =28V; I
D= 900 mA 2.7 3.2 3.7 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 3 µA
IDSX drain cut-off current VGS =V
GS(th) +6V;
VDS =10V 27 30 - A
IGSS gate leakage current VGS = 15 V; VDS = 0 V - - 300 nA
gfs transfer conductance VDS =10V; I
D=10A - 9.0 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) +6V;
ID=6A - 0.09 - Ω
Crs feedback capacitance VGS =0V; V
DS =28V;
f=1MHz - 2.5 - pF
Table 7: Application information
Mode of operation: 2-Carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test
model 1, 1-64 DPCH, f
1
= 2112.5 MHz, f
2
= 2122.5 MHz, f
3
= 2157.5 MHz, f
4
= 2167.5 MHz.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 25 W 12.5 13.5 - dB
IRL input return loss PL(AV) = 25 W 9 15 - dB
ηDdrain efficiency PL(AV) =25 W 2426- %
IMD3 third order intermodulation distortion PL(AV) = 25 W - −37 −35 dBc
ACPR adjacent channel power ratio PL(AV) = 25 W - −41 −39 dBc
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 4 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
[1] 0.2 dB overlap is allowed for measurement reproducibility.
[2] For 2-carrier W-CDMA at f1= 2157 MHz, f2= 2167.5 MHz.
(1) 2-carrier W-CDMA performance; VDS =28V,I
Dq = 900 mA; f1= 2135 MHz and f2= 2145 MHz;
PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH.
Fig 1. 2-carrier W-CDMA ACPR, IMD3, power gain and drain efficiency as functions of
average load power; typical values
Table 8: Typical impedance values
V
DS
=28V; I
Dq
= 900 mA; P
L
= 25 W (AV); T
case
=25
°
C.
Frequency
(MHz) ZS
(Ω)ZL
(Ω)
2110 2.2 + j4.8 1.5 −j2.6
2140 2.2 + j4.6 1.5 −j2.4
2170 2.2 + j4.5 1.4 −j2.2
Table 9: RF gain grouping
Code[1] Gain (dB)[2]
Min Max
A 12.5 13.0
B 13.0 13.5
C 13.5 14.0
D 14.0 14.5
E 14.5 -
PL(AV) (W)
0504020 3010
001aac270
20
10
30
40
ηD
(%)
Gp
(dB)
0
−35
−45
−25
−15
ACPR,
IMD3
(dBc)
−55
ηD
IMD3
ACPR
Gp
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 5 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
(1) IDq = 600 mA
(2) IDq = 750 mA
(3) IDq = 900 mA
(4) IDq = 1050 mA
(5) IDq = 1200 mA
Two-tone measurement;
VDS =28V; f
1= 2140.0 MHz; f2= 2140.1 MHz
(1) IDq = 600 mA
(2) IDq = 750 mA
(3) IDq = 900 mA
(4) IDq = 1050 mA
(5) IDq = 1200 mA
Two-tone measurement;
VDS =28V; f
1= 2140.0 MHz; f2= 2140.1 MHz
Fig 2. Power gain as a function of peak envelope load
power; typical values Fig 3. Third order intermodulation distortion as a
function of peak envelope power; typical values
ton =8µs
toff =1ms
Fig 4. Pulsed peak power capability; typical values Fig 5. t50% failures due to electromigration as a
function of junction temperature
001aac271
12
14
16
Gp
(dB)
10
PL(PEP) (W)
110
3
102
10
(5)
(1) (2) (3) (4)
PL(PEP) (W)
110
3
102
10
001aac272
−50
−40
−60
−30
−20
IMD3
(dBc)
−70
(5) (1)
(4)
(2)
(3)
PL (W)
0 20016080 12040
001aac273
12
14
16
Gp
(dB)
10
P3dB = 161 W (= 51.3 dBm)
P1dB = 135 W (= 52.1 dBm)
001aac274
108
107
1010
109
1011
t50%
(hr)
106
Tj (°C)
100 260220140 180
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9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 6 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
8. Test information
See Table 10 for list of components
Fig 6. Test circuit for operation at 2.14 GHz
C15
C16
C14
C11
C10
DUT
L6
C6
L7
C5
C3
C2
C4
C12 C13
VD
R1
VG
C1
C7
L2
L1
L3
L4
L5 L8
L9
L10 L11 L12 L13
L14 C8 C9
001aac275
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xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
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9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 7 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
The components are situated on double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr= 3.5); thickness = 0.76 mm.
The other side is unetched and serves as a ground plane.
See Table 10 for list of components.
Fig 7. Component layout for 2.14 GHz test circuit
L8
L5
L6
L4
L3L2
L1
L7
L9
L10
C16
C8 C9 C10
C15
C14
C13
C12
C11
C6
C4
C5
C3
C1
VGR1
C2
C7
L14
L11 L12 L13
001aac276
50 mm
75 mm
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 8 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] American Technical Ceramics type 180R or capacitor of same quality.
[4] Striplines are on a double copper-clad Taconic RF35 PCB (εr= 3.5); thickness = 0.76 mm.
Table 10: List of components (see Figure 6 and Figure 7 )
Component Description Value Dimensions
C1, C2, C11 tantalum capacitor 10 µF; 35 V
C3 multilayer ceramic chip capacitor 4.7 µF; 25 V
C4, C10 multilayer ceramic chip capacitor [1] 8.2 pF
C5, C8, C14,
C15 multilayer ceramic chip capacitor 1.5 µF; 50 V
C6 multilayer ceramic chip capacitor [2] 0.6 pF
C7 multilayer ceramic chip capacitor [1] 4.7 pF
C9 multilayer ceramic chip capacitor 220 nF; 50 V
C12 electrolytic capacitor 220 µF; 63 V
C13 tantalum capacitor 4.7 µF; 50 V
C16 multilayer ceramic chip capacitor [3] 7.5 pF
L1 stripline [4] Z0=50Ω(W ×L) 32.3 mm ×1.7 mm
L2 stripline [4] Z0=50Ω(W ×L) 2.2 mm ×1.7 mm
L3 stripline [4] Z0=24Ω(W ×L) 2.3 mm ×4.8 mm
L4 stripline [4] Z0=15Ω(W ×L) 2.4 mm ×8mm
L5 stripline [4] Z0= 9.5 Ω(W ×L) 9.3 mm ×14 mm
L6 stripline [4] Z0=60Ω(W ×L) 4 mm ×1.2 mm
L7 stripline [4] Z0=60Ω(W ×L) 14.5 mm ×1.2 mm
L8 stripline [4] Z0= 8.2 Ω(W ×L) 9.3 mm ×16.8 mm
L9 stripline [4] Z0= 5.5 Ω(W ×L) 3 mm ×25.8 mm
L10 stripline [4] Z0=50Ω(W ×L) 11 mm ×1.7 mm
L11 stripline [4] Z0=50Ω(W ×L) 9.5 mm ×1.7 mm
L12 stripline [4] Z0=34Ω(W ×L) 3 mm ×3mm
L13 stripline [4] Z0=50Ω(W ×L) 12.7 mm ×1.7 mm
L14 stripline [4] Z0=43Ω(W ×L) 13.5 mm ×2.1 mm
R1 SMD resistor 4.7 Ω; 0.1 W
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 9 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
9. Package outline
Fig 8. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
AF
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035 1.345
1.335
0.210
0.170 0.133
0.123 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 10 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Fig 9. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 99-12-28
03-01-10
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 11 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
10. Abbreviations
Table 11: Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CW Continuous Wave
CCDF Complementary Cumulative Distribution Function
DPCH Dedicated Physical Channels
IDq quiescent drain current
LDMOS Laterally Diffused Metal Oxide Semiconductor
PAR Peak-to-Average Ratio
PEP Peak Envelope Power
RF Radio Frequency
TM1 Test Model 1
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 12 of 14
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
11. Revision history
Table 12: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
BLF4G22-100_4G22
S-100_1 20060110 Product data sheet - 9397 750 14338 -
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
9397 750 14338 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 13 of 14
12. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.Date of release: 10 January 2006
Document number: 9397 750 14338
Published in The Netherlands
Philips Semiconductors BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
17. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
12 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13
13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
16 Contact information . . . . . . . . . . . . . . . . . . . . 13
