Silicon Power Transistor BU208A Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of televisions. Specification Fetaures : F Horizontal Deflection NPN Silicon Power Transistor F 5 Amp / 700 V device in TO-204AA [ TO-3 ] package F 12.5 Watts device F VCEO (sus) 700 V F Collector Emitter Voltage VCE = 1500 V F Fast Switching - 400 ns typical fall time F Low thermal resistance 1 C/W , Increased reliability Symbol Parameters / Conditions Ratings Maximum Ratings : V CEO(SUS) Collector- Emitter Voltage 700 Vdc V CES V EB IC I CM Collector- Emitter Voltage Emitter Base Voltage Collector Current - Continuos Peak : Pulse width = 5 ms , Duty Cycle 10 Base Current - Continuous Peak : Pulse width = 5 ms , Duty Cycle 10 % 1500 Vdc 5 Vdc 5 Adc 7.5 Adc % 4 Adc 3.5 Adc IB I BM Thermal Characteristics : 1.6 C/W R thjc Thermal resistance junction to case TL Maximum Lead Temperature for Soldering Purpose : 1/8" from Case for 5 sec Total Power Dissipation @ Tc = 95 C Derate above 95 C Operating and Storage Junction Temperature Range PD Tj & T Stg 275 C 12.5 Watta 0.625 W /C -65 C ....+ 115 C ELECTRICAL CHARACTERISTICS : [ Tc = 25 C unless otherwise noted ] Characteristic Symbol Min Typ Max Unit Off Characteristics : [ Pulse Test : Pulse width = 300 s , Duty Cycle 2 % ] Collector - Emitter Sustaining Voltage [ Ic = 100 mAdc , L = 25 mH ] Collector Cutoff Current [ VCE = 1500 Vdc , VBE = 0 ] Emitter Base Voltage [ IE = 10 mA , Ic = 0 ] [ IE = 100 mA , Ic = 0 ] VCEO(sus) 700 Vdc ICES 1 VEBO mAdc Vdc 5 7 On Characteristics : [ Pulse Test : Pulse width = 300 s , Duty Cycle 2 % ] DC Current Gain [ Ic = 4.5 Adc , VCE = 5 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 4.5 Adc , IB = 2 Adc ] Base-Emitter Saturation Voltage [ Ic = 4.5 Adc , IB = 2 Adc ] hFE 2.25 VCE(sat) Vdc 1 VBE(sat) Vdc 1.5 Dynamic Characteristics : Current Gain - Bandwidth Product [ Ic = 0.1 Adc , VCE=5 Vdc , f=1 MHz ] Output Capacitance [ VCB= 10 Vdc , IE = 0 , f = 1 fT 4 MHz Cob 125 pF MHz ] Switching Characteristics : Storage time : ts Fall time : tf ( Ic= 4.5 Adc , IB1 = 1.8 Adc , LB=10 H ) ( Ic= 4.5 Adc , IB1 = 1.8 Adc , LB=10 H ) Typ 8 s 0.4 s