Silicon Power Transistor
BU208A
Technical Data
Typical Applications : These devices are designed for horizontal deflection
output stages of televisions.
Specification Fetaures :
F Horizontal Deflection NPN Silicon Power Transistor
F 5 Amp / 700 V device in TO-204AA [ TO-3 ] package
F 12.5 Watts device
F VCEO (sus) 700 V
F Collector Emitter Voltage VCE = 1500 V
F Fast Switching – 400 ns typical fall time
F Low thermal resistance 1 °C/W , Increased reliability
Symbol Parameters / Conditions Ratings
Maximum Ratings :
V CEO(SUS) Collector- Emitter Voltage 700 Vdc
V CES Collector- Emitter Voltage 1500 Vdc
V EB Emitter Base Voltage 5 Vdc
I C
I CM
Collector Current – Continuos
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 % 5 Adc
7.5 Adc
I B
I BM
Base Current – Continuous
Peak : Pulse width = 5 ms , Duty Cycle ⊆ 10 % 4 Adc
3.5 Adc
Thermal Characteristics :
R thjc Thermal resistance junction to case 1.6 °C/W
T L Maximum Lead Temperature for Soldering Purpose : 1/8”
from Case for 5 sec 275 °C
P D Total Power Dissipation @ Tc = 95 °C
Derate above 95 °C12.5 Watta
0.625 W /°C
Tj & T Stg Operating and Storage Junction Temperature Range -65 °C ….+ 115 °C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
Collector – Emitter Sustaining
Voltage [ Ic = 100 mAdc , L = 25
mH ]
VCEO(sus) 700 Vdc
Collector Cutoff Current
[ VCE = 1500 Vdc , VBE = 0 ] ICES 1 mAdc
Emitter Base Voltage
[ IE = 10 mA , Ic = 0 ]
[ IE = 100 mA , Ic = 0 ]
VEBO 57
Vdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
DC Current Gain
[ Ic = 4.5 Adc , VCE = 5 Vdc ] hFE 2.25
Collector-Emitter Saturation
Voltage
[ Ic = 4.5 Adc , IB = 2 Adc ]
VCE(sat)
1
Vdc
Base-Emitter Saturation Voltage
[ Ic = 4.5 Adc , IB = 2 Adc ] VBE(sat) 1.5 Vdc
Dynamic Characteristics :
Current Gain – Bandwidth Product
[ Ic = 0.1 Adc , V
CE=5 Vdc , f=1
MHz ]
fT4 MHz
Output Capacitance
[ V
CB= 10 Vdc , IE = 0 , f = 1
Cob 125 pF
MHz ]
Switching Characteristics :
Typ
Storage time : ts( Ic= 4.5 Adc , I
B1 = 1.8 Adc
, LB=10 µH ) 8 µs
Fall time : tf( Ic= 4.5 Adc , I
B1 = 1.8 Adc
, LB=10 µH ) 0.4 µs
