June 2004 / C
Page 1
SEMICONDUCTOR
TAK CHEON
G
®
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter Value Units
Power Dissipation 500 mW
Storage Temperature Range -65 to +200 °C
Operating Junction Temperature +200 °C
Lead Temperature (1/16” from case for 10 seconds) +230 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.4 to 56 Volts
DO-35 Package (JEDE C)
Through-Hole Device Type Mounting
Hermetic ally Seal ed Glass
Compress i on Bonded Construct i on
All external surfac es are corros i on resistant and leads are readily solderable
Cathode indic ated by polari ty band
Electrical Characteristics TA = 25°C unless otherwise noted
Device Type VZ @ IZT
(Volts)
Nominal
IZT
(mA)
ZZT @ IZT
(Ω)
Max
ZZK @ IZK = 0.25mA
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TC1N5221B 2.4 20 30 1200 100 1
TC1N5222B 2.5 20 30 1250 100 1
TC1N5223B 2.7 20 30 1300 75 1
TC1N5224B 2.8 20 30 1400 75 1
TC1N5225B 3 20 29 1600 50 1
TC1N5226B 3.3 20 28 1600 25 1
TC1N5227B 3.6 20 24 1700 15 1
TC1N5228B 3.9 20 23 1900 10 1
TC1N5229B 4.3 20 22 2000 5 1
TC1N5230B 4.7 20 19 1900 5 2
TC1N5231B 5.1 20 17 1600 5 2
TC1N5232B 5.6 20 11 1600 5 3
TC1N5233B 6 20 7 1600 5 3.5
TC1N5234B 6.2 20 7 1000 5 4
TC1N5235B 6.8 20 5 750 3 5
TC1N5236B 7.5 20 6 500 3 6
TC1N5237B 8.2 20 8 500 3 6.5
TC1N5238B 8.7 20 8 600 3 6.5
TC1N5239B 9.1 20 10 600 3 7
TC1N5240B 10 20 17 600 3 8
TC1N5241B 11 20 22 600 2 8.4
TC1N5242B 12 20 30 600 1 9.1
TC1N5243B 13 9.5 13 600 0.5 9.9
TC1N5244B 14 9 15 600 0.1 10
Cathode Anode
ELECTRICAL SYMBOL
TC1N5221B through TC1N5263B Series
L
52
xx
T
DEVICE MARKING DIAGRAM
L : Logo
Device Code : TC1N52xxT
Tolerance (T) : A = 10%
: B = 5%
: C = 2%
: D = 1%
AXIAL LEAD
DO35
June 2004 / C
Page 2
SEMICONDUCTOR
TAK CHEON
G
®
Electrical Characteristics TA = 25°C unless otherwise noted
Device Type VZ @ IZT
(Volts)
Nominal
IZT
(mA)
ZZT @ IZT
(Ω)
Max
ZZK @ IZK = 0.25mA
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TC1N5245B 15 8.5 16 600 0.1 11
TC1N5246B 16 7.8 17 600 0.1 12
TC1N5247B 17 7.4 19 600 0.1 13
TC1N5248B 18 7 21 600 0.1 14
TC1N5249B 19 6.6 23 600 0.1 14
TC1N5250B 20 6.2 25 600 0.1 15
TC1N5251B 22 5.6 29 600 0.1 17
TC1N5252B 24 5.2 33 600 0.1 18
TC1N5253B 25 5 35 600 0.1 19
TC1N5254B 27 4.6 41 600 0.1 21
TC1N5255B 28 4.5 44 600 0.1 21
TC1N5256B 30 4.2 49 600 0.1 23
TC1N5257B 33 3.8 58 700 0.1 25
TC1N5258B 36 3.4 70 700 0.1 27
TC1N5259B 39 3.2 80 800 0.1 30
TC1N5258B 36 3.4 70 700 0.1 27
TC1N5259B 39 3.2 80 800 0.1 30
TC1N5260B 43 3 93 900 0.1 33
TC1N5261B 47 2.7 105 1000 0.1 36
TC1N5262B 51 2.5 125 1100 0.1 39
TC1N5263B 56 2.2 150 1300 0.1 43
VF Forward Voltage = 1.1 V Maxim um @ IF = 200 mA for all types
Notes:
1. The type numbers listed have zener voltage as shown and have a s tandard tolerance on the nominal zener voltage of ±5%.
Suffix A = ±10%, C = ±2% and D = ±1%.
2. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter
voltage tol erances, contact your nearest Tak Cheong Electronics represent ative.
3. The zener impedanc e is derived fr om t he 60-cycle ac volt age, which res ult s when an ac current havin g an rm s val ue equal to
10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
Electrical Symbol Definition Typical Characteristics
Symbol Parameter
VZ Reverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Ma xim um Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IR Reverse Leakage Current @ VR
VR Breakdown Voltage
IF Forward Current
VF Forward Voltage @ IF
V
I
(mV)
(V)
(mA)
(mA)
VF
IF
VRIR
VZ
IZT
(nA)
June 2004 / C
Page 3
SEMICONDUCTOR
TAK CHEON
G
®
Ordering Information
Device Package Quantity
TC1N52xxB Bulk 10,000
TC1N52xxB.TB Tape and Ammo (52mm) 5,000
TC1N52xxB.TR Tape and Reel (52mm) 10,000
TC1N52xxB.T26B Tape and Ammo (26mm) 5,000
TC1N52xxB Others (…contact Tak Cheong sales repres ent atives)
Axial-Lead Tape Packaging Standards
This axial-lead com ponent’s pac kaging requirem ents use i n automatic t esting and assembl y equipment. A nd this st andard practices for
lead-tape packagi ng of axial-lead components meets the requirements of EIA Standard RS -296-D “Lead-taping of Components on Axial
Lead Configurati on for A utomati c Ins ertion”.
June 2004 / C
Page 4
SEMICONDUCTOR
TAK CHEON
G
®
Tape & Reel Packaging Information
Tape & Reel Outline
Reel Dimensions
DIM Millimeters
D1 356
D2 30
D3 84
W1 77.5
Quantity Per Reel
PKG Type Quantity P er Reel
DO-35 10,000
June 2004 / C
Page 5
SEMICONDUCTOR
TAK CHEON
G
®
Tape & Ammo Packaging Information
Tape & Ammo
Outline
Quantity Per Ammo
Box
PKG Type Quantity Per Box
DO-35 5,000
Taping Dim ens ions
Description Millimeters
Standard Width 52 26
Tape Spacing (B) 52 ± 0.69 26 +0.5 / -0
Component Pitch (C) 5.08 ± 0.4 5.08 ± 0.4
Untaped Lead (L1 – L2) ± 0.69 ± 0.69
Glass Offset (F) ± 0.69 ± 0.69
Bent (D) 1.2 Max 1.2 Max
Tape Width (G) 6.138 ± 0.576 6.138 ± 0.576
Tape Mismatch (E) 0.55 Max 0.55 Max
Taped Lead (G) 3.2 Min 3.2 Min
Lead Beyond Tape (H) 0 0
FOR 52mm BOX
250mm x 80mm x 80mm
FOR 26mm BOX
255mm x 100mm x 48mm
June 2004 / C
Page 6
SEMICONDUCTOR
TAK CHEON
G
®
Bulk Packaging Information
Bulk Outline
Quantity Per Box
PKG Type Quantity Per Box
DO-35 10,000
Plastic Bag
DO-35 500 x 20 Plastic Bag
Quantity Per Plastic Bag
190mm x 150mm x 65mm
June 2004 / C
Page 7
SEMICONDUCTOR
TAK CHEON
G
®
Package Outline
Package Case Outline
DO-35 DO-35
Millimeters Inches
DIM
Min Max Min Max
A 0.46 0.55 0.018 0.022
B 3.05 5.08 0.120 0.200
C 25.40 38.10 1.000 1.500
D 1.53 2.28 0.060 0.090
Notes: 1. All dimensions are withi n JEDEC standard.
2. DO35 polarity denoted by cat hode band.
