2N3506L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose switching transistor * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3506LJ) * JANTX level (2N3506LJX) * JANTXV level (2N3506LJV) * JANS level (2N3506LJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 1506 Reference document: MIL-PRF-19500/349 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 40 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts IC 3 A PT 1 5.71 5 28.6 RJA 175 W mW/C W mW/C C/W TJ -65 to +200 C TSTG -65 to +200 C Collector Current, Continuous O Power Dissipation, TA = 25 C Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. E PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3506L Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Collector-Base Breakdown Voltage V(BR)CBO IC = 100 A 60 Units Volts Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 40 Volts Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 A 5 Volts Collector-Emitter Cutoff Current ICEX1 VCE = 40 Volts, VEB = 4 Volts 1 A Collector-Emitter Cutoff Current ICEX2 VCE = 40 Volts, VEB = 4 Volts, TA = 150C 1.5 mA Max 250 200 Units On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VBEsat3 VCEsat1 VCEsat2 VCEsat3 Test Conditions IC = 500 mA, VCE = 1 Volts IC = 1.5 A, VCE = 2 Volts IC = 2.5 A, VCE = 3 Volts IC = 3.0 A, VCE = 5 Volts IC = 500 mA, VCE = 1 Volts TA = -55C IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA Min 50 40 30 25 25 Min Typ 0.5 1.0 1.5 1.0 1.3 2.0 0.8 Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Symbol Delay Time td Test Conditions VCE = 5 Volts, IC = 100 mA, f = 20 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 3 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz IC = 1.5 A, IB1 = 150 mA Rise Time tr IC = 1.5 A, IB1 = 150 mA 30 ns Storage Time ts IC = 1.5 A, IB1=IB2 = 150 mA 55 ns Fall Time tf IC = 1.5 A, IB1=IB2 = 150 mA 35 ns |hFE| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Typ 3 Max Units 15 40 pF 300 pF 15 ns Switching Characteristics Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2