© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-51 12 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 1
CM3205
PRELIMINARY
Features
5A continuous current from VDDQ
1.8V to 2.6V adjustable VDDQ output voltage
600-mV typical VDDQ dropout voltage at 5A
•V
TT tracking at 50% of VDDQ
Source and sink up to 2A VTT current
Excellent load and line regulation, low noise
Fast transient response
Meets JEDEC DDR-I SDRAM power spec.
Linear regulator design requires no inductors and
has low external component count
Integrated power MOSFETs
Dual purpose ADJ/Shutdown pin
Built-in over-current limit with short-circuit foldback
and thermal shutdown for VDDQ and VTT
5mA quiescent current
TO252 andTO263 packages for high performance
thermal dissipation and easy PC board layout
Optional RoHS Compliant Lead-free packaging
Applications
DDR memory and active termination buses
Desktop Computers, Servers
Residential and Enterprise Gateways
DSL Modems
Routers and Switchers
DVD recorders
3D AGP cards
LCD TV and STB
Product Description
The CM3205 is a dual-output, low noise linear regula-
tor designed to meet SSTL-2 and SSTL-3 specifica-
tions for DDR-SDRAM VDDQ supply and termination
voltage VTT supply. With integrated power MOSFET’s,
the CM3205 can source up to 5A of VDDQ current, and
source or sink up to 2A VTT current. The typical drop-
out voltage for VDDQ is 600-mV at 5A load current.
The CM3205 provides fast response to transient load
changes. Load regulation is excellent, less than 1%,
from no load to full load. It also has built-in over-current
limits and thermal shutdown at 170°C.
The CM3205 is packaged in an easy-to-use 5-pin
D2PAK (TO263-5) and DPAK (TO252-5). Low thermal
resistance (48°C/W) allows it to withstand 1.7W (1) dis-
sipation at 85°C ambient. It can operate over the indus-
trial ambient temperature range of –40°C to 85°C.
15432
2.50V, 5A
DL0
VDDQ
Chip
Set
DLn
DDR
Memory
REF
845
887
VDDQ
RT0
RTn
680u
680u
680u
3.3V
1.25V, 2.5A
S/D
1u
1k
4.7u
4.7u
4.7u
ADJSD
GND
VDDQ
VTT
VIN
CM3205
V
REF
Typical Application
DDR V
DDQ
and Termination Voltage Regulator
© 2006 California Micro De vices Corp. All rights reserved.
2490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 05/08/06
CM3205
PRELIMINARY
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
PACKAGE / PINOUT DIAGRAM
Note: This drawing is not to scale.
5-Lead TO-252-5 Package
1
2
3
4
5
To p V i ew
ADJSD
VDDQ
GND
VIN
VTT
CM3205-00TP
5-Lead TO-263-5 Package
1
2
3
4
5
Top View
ADJSD
VDDQ
GND
VIN
VTT
CM3205-00TN
PART NUMBERING INFORMATION
Pins Package
Lead-free Finish
Ordering Part Number1Part Marking
5 TO-263-5 CM3205-00TN
5 TO-252-5 CM3205-00TP
ABSOLUTE MAXIMUM RATINGS
PARAMETER RATING UNITS
VIN to GND [GND - 0.3] to +6.0 V
Pin Voltages
VDDQ ,VTT to GND
ADJSD to GND
[GND - 0.3] to +6.0
[GND - 0.3] to +6.0
V
V
Storage Temperature Range -65 to +150 °C
Operating Temperature Range -40 to +85 °C
Lead Temperature (Soldering, 10s) 300 °C
Package Pinout
© 2006 California Micro De vices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 3
CM3205
PRELIMINARY
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
VIN = 3.3V, typical values are at TA = 25°C (unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
S
VIN
VIN Supply Voltage Range 3.15 3.30 3.50 V
VUVLO Under-voltage Lockout All outputs are no load 2.4 2.7 2.9 V
UVLO Hysterisis 100 mV
IQQuiescent Current VDDQ = 0V, VTT = 0V,
ADJSD = 3.3V (shutdown)
3mA
VDDQ = 2.5V, VTT = 1.25V, (no load) 5mA
VDDQ Regulator
Output Current Limit VOUT = 2.5V 6.0 8.0 A
VREF Reference Voltage 1.203 1.215 1.227 V
IBIAS Input Bias Current (IADJ)VADJSD = V
REF 30 200 nA
VR LOAD Load Regulation IO = 10 mA to 5A 1 %
VR LINE Line Regulation VIN = 3.15V to 3.5V, IO = 10 mA 0.5 %
VDROPOUT Dropout Voltage VIN = 3.15V, IO = 5A 600 mV
VTT Regulator
Output Current Limit (Source) VOUT = 1.25V 2 2.5 A
Output Current Limit (Sink) VOUT = 1.25V 2 2.5 A
VR VTTLOAD Load Regulation IO = 0A to 2A 1 %
IO = 0A to -2A 1 %
Over Temperature Protection
Thermal Shutdown Temperature 170 °C
Thermal Shutdown Hysteresis 50 °C
Specifications (cont’d)
© 2006 California Micro De vices Corp. All rights reserved.
4490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 05/08/06
CM3205
PRELIMINARY
VD DQ v s. T e mpe r at ure
2.49
2.495
2.5
2.505
2.51
-40 -20 0 20 40 60 80 100 120 140
Temperature oC
VDDQ (V)
VDDQ vs. Load Current
0
0.5
1
1.5
2
2.5
3
0246810
IDDQ (A)
VDDQ (V)
Ta=25 o
C
Vin=3.3V
VDDQ Dropout vs. IDDQ
0
100
200
300
400
500
600
012345
IDDQ (A)
Dropout Voltage (mV)
VTT vs. Load Current
0.0
0.5
1.0
1.5
2.0
2.5
-4 -2 0 2 4
ITT (A)
VTT (V)
Source
VTT v s. VDDQ
0.75
0.85
0.95
1.05
1.15
1.25
1.35
1.45
1.55
1.65
1.5 1.75 2 2.25 2.5 2.75 3 3.25
VDDQ (V)
VTT (V)
Sink
Vin
VDDQ
VTT
1ms/div
1V/div
UVLO
Startup into Full Load
VDDQ=2.5V
Ta=25oC
Typical Operating Curves
© 2006 California Micro De vices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 5
CM3205
PRELIMINARY
Pin Descriptions
VDDQ Transient Response VTT Transient Response
VIN =3.3V
IOUT Step: 10mA ~ 3A
VTT
VDDQ
IOUT IOUT
VIN =3.3V
IOUT Step: -2.5A ~ +2.5A
PIN DESCRIPTIONS
PIN(S) NAME DESCRIPTION
1ADJSD
This pin is for VDDQ output voltage adjustment. The VDDQ output voltage is set using an
external resistor divider connected to ADJSD. The output voltage is determined by the
following formula:
where R1 is the ground-side resistor and R2 is the upper resistor of the divider.
Connect these resistors to the VDDQ output at the point of regulation.
In addition, this input functions as a shutdown pin. Apply a voltage higher than VIN-1.2V
to this pin to simultaneously shutdown both VDDQ and VTT outputs. The outputs are
restored when the voltage on this pin falls below VIN-1.2V. A low-leakage diode in
series with the shutdown input signal is recommended to avoid interference with the
voltage adjustment setting.
2VDDQ VDDQ regulator output voltage pin.
3GND
GROUND reference pin. The back tab is also ground and serves as the package
heatsink. It should be soldered to the circuit board copper to remove excess heat from
the IC.
4VIN Input voltage pin, typically 3.3V from the power supply.
5VTT VTT regulator output voltage pin, which is preset to 50% of VDDQ.
VDDQ 1.215V R1 R2+
R1
---------------------
×=
Typical Operating Characteristics
© 2006 California Micro De vices Corp. All rights reserved.
6490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 05/08/06
CM3205
PRELIMINARY
Application Information
Powering DDR Memory
Double-Data-Rate (DDR) memory has provided a huge
step in performance for personal computers, servers
and graphic systems. As is apparent in its name, DDR
operates at double the data rate of earlier RAM, with
two memory accesses per cycle versus one. DDR
SDRAM's transmit data at both the rising falling edges
of the memory bus clock.
DDR’s use of Stub Series Terminated Logic (SSTL)
topology improves noise immunity and power-supply
rejection, while reducing power dissipation. To achieve
this performance improvement, DDR requires more
complex power management architecture than previ-
ous RAM technology.
Unlike the conventional DRAM technology, DDR
SDRAM uses differential inputs and a reference volt-
age for all interface signals. This increases the data
bus bandwidth, and lowers the system power con-
sumption. Power consumption is reduced by lower
operating voltage, a lower signal voltage swing associ-
ated with Stub Series Terminated Logic (SSTL_2) and
by the use of a termination voltage, VTT
. SSTL_2 is an
industry standard, defined in JEDEC document
JESD8-9. SSTL_2 maintains high-speed data bus sig-
nal integrity by reducing transmission reflections.
JEDEC further defines the DDR SDRAM specification
in JESD79C.
DDR memory requires three tightly regulated voltages:
VDDQ, VTT
, and VREF (see Figure 1). In a typical
SSTL_2 receiver, the higher current VDDQ supply volt-
age is normally 2.5V with a tolerance of ±200-mV. The
active bus termination voltage, VTT
, is half of VDDQ.
VREF is a reference voltage that tracks half of VDDQ, ±
1%, and is compared with the VTT terminated signal at
the receiver. VTT must be within ±40-mV of VREF
.
Figure 1. Typical DDR terminations, Class II
9,1
3.3V
9''4
1.22V
977
*1'
2.50V, 5A
$'-6'
5 5
Shut
Down
CM3205
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VDDQ/2, 2.5A

9''4

9''4
&XUUHQW
/LPLW
&XUUHQW
/LPLW
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/LPLW
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89/2
%DQGJDS
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Transmitter
VDDQ VTT (=VDDQ/2) VDDQ
Receiver
Rs = 25
Line
Rt = 25
VREF (=VDDQ/2)
Functional Block Diagram
© 2006 California Micro De vices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 7
CM3205
PRELIMINARY
The VTT power requirement is proportional to the num-
ber of data lines and the resistance of the termination
resistor, but does not vary with memory size. In a typi-
cal DDR data bus system each data line termination
may momentarily consume 16.2-mA to achieve the
405-mV minimum over VTT needed at the receiver:
A typical 128 Mbyte SSTL-2 memory system, with 192
terminated lines, has a worst-case maximum VTT sup-
ply current up to ±3.11A. However, a DDR memory
system is dynamic, and the theoretical peak currents
only occur for short durations, if they ever occur at all.
These high current peaks can be handled by the VTT
external capacitor. In a real memory system, the con-
tinuous average VTT current level in normal operation
is less than ±200 mA.
The VDDQ power supply, in addition to supplying cur-
rent to the memory banks, could also supply current to
controllers and other circuitry. The current level typi-
cally stays within a range of 2.0A to 3.0A, with peaks
up to 4.0A or more, depending on memory size and the
computing operations being performed.
The tight tracking requirements and the need for VTT to
sink, as well as source, current provide unique chal-
lenges for powering DDR SDRAM.
CM3205 Regulator
The CM3205 dual output linear regulator provides all of
the power requirements of DDR memory by combining
two linear regulators into a single TO-263 or TO-252 5-
lead package. The VDDQ regulator can supply up to 5A
continuous current, and the two-quadrant VTT termina-
tion regulator has current sink and source capability to
±2A. The VDDQ linear regulator uses a PMOS pass
element for a very low dropout voltage, typically 600mV
at a 5A output. The output voltage of the VDDQ regula-
tor can be set by an external voltage divider. The sec-
ond output, VTT
, is regulated at VDDQ/2 by an internal
resistor divider. The VTT regulator can source, as well
as sink, up to 2A continuous current. The CM3205 is
designed for optimal operation from a nominal 3.3VDC
bus, but can work with VIN as high as 5V. When operat-
ing at higher VIN voltages, attention must be given to
the increased package power dissipation and propor-
tionally increased heat generation.
VREF is typically routed to inputs with high impedance,
such as a comparator, with little current draw. An ade-
quate VREF can be created with a simple voltage
divider of precision, matched resistors from VDDQ to
ground. A small ceramic bypass capacitor can also be
added for improved noise performance.
Input and Output Capacitors
The CM3205 requires that at least a 680μF electrolytic
capacitor be located near the VIN pin for stability and to
maintain the input bus voltage during load transients.
An additional 4.7μF ceramic capacitor between the VIN
(pin 4) and the GND (pin 5), located as close as possi-
ble to those pins, is recommended to ensure stability.
A minimum of a 680μF electrolytic capacitor is recom-
mended for the VDDQ output. An additional 4.7μF
ceramic capacitor between the VDDQ (pin 2) and GND,
located very close to those pins, is recommended.
A minimum of a 680μF, electrolytic capacitor is recom-
mended for the VTT output. This capacitor should have
low ESR to achieve best output transient response. SP
or OSCON capacitors provide low ESR at high fre-
quency, and thus are a good choice. In addition, place
a 4.7μF ceramic capacitor between the VTT pin (pin 5)
and GND, located very close to those pins. The total
ESR must be low enough to keep the transient within
the VTT window of 40-mV during the transition for
source to sink. An average current step of ±0.5A
requires:
Both outputs will remain stable and in regulation even
during light or no load conditions.
Adjusting VDDQ Output Voltage
The CM3205 internal bandgap reference is set at
1.215V. The VDDQ voltage is adjustable by using a
resistor divider, R1 and R2:
Iterminaton 405mV
Rt 25Ω()
---------------------- 16.2mA==
ESR 40mV
1A
---------------
<40mΩ=
VOUT VADJ 1R2
R1
-------+
⎝⎠
⎛⎞
×=
Application Information (cont’d)
© 2006 California Micro De vices Corp. All rights reserved.
8490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 05/08/06
CM3205
PRELIMINARY
where VADJ = 1.215V (±-1%). For best regulator stabil-
ity, we recommend that R1 and R2 not exceed 10-kΩ
each.
Shutdown
Pin 1 (ADJSD) also serves as a shutdown pin. When
pin 1 is pulled high, > (VIN - 1.2V), the VDDQ output is
turned off and both source and sink MOSFET’s of the
VTT regulator are set to a high impedance state. During
shutdown, the quiescent current is reduced to less than
3mA, independent of output load.
It is recommended that a 1N91 4 or equivalent low leak-
age diode be placed between Pin 1 and an external
shutdown signal to prevent interference with the ADJ
pin’s normal opera tion. When the diode a node is pulled
low, or left open, the CM3205 is again enabled.
Current Limit, Foldback and Over-temperature Pro-
tection
The CM3205 features internal current limiting with ther-
mal protection. During normal operation, VDDQ limits
the output current to approximately 8A and VTT limits
the output current to approximately ±2A. When VTT is
current limiting into a hard short circuit, the output cur-
rent folds back to a lower level, about 1.5A, until the
over-current condition ends. While current limiting is
designed to prevent gross device failure, care should
be taken not to exceed the power dissipation ratings of
the package. If the junction temperature of the device
exceeds 170-°C (typical), the thermal protection cir-
cuitry triggers and shuts down both outputs. Once the
junction temperature has cooled to below about
120-°C, the CM3205 returns to normal operation.
Thermal Considerations
Both the TO-252 and the TO-263 packages provide a
very effective thermal conduction path from the silicon
junction into the PC board to which it is mounted. See
Figure 2 below. These surface mount packages have a
large metal tab that solders to the PC board, where the
ground plane can serve as heatsink. This metal tab
connects internally to GND (pin 3). A top-layer ground
plane is the best in terms of convection air-cooling, a
bottom-layer ground plane is less effective, and a mid-
dle layer ground plane of a multiple-layer PC board is
the least effective.
We recommend the metal tab of CM3205 be soldered
to a minimum of 3 square inches of ground plane on
the top side of the PC board. Use 20 or more plate-
through vias to connect the top layer ground plane to
ground planes on other layers.
When measured in accordance to JEDEC JESD51-3,
under natural convection without forced airflow, the
Theta junction-to-air (θja) resistance is approximately
48-°C/watt for the CM3205-00TN (TO-263-5), and
55-°C/watt for the CM3205-00TP (TO-252-5).
Figure 2. Thermal Layout
Ground
Plane
Vias (0.3mm
Diameter)
(TOP VIEW) (SIDE VIEW)
Bottom
Ground
Plane
Via
Top
Ground
Plane
Power Trace
Via (0.3mm
Diameter)
Application Information (cont’d)
© 2006 California Micro De vices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 9
CM3205
PRELIMINARY
TO-263-5 Mechanical Specifications
Dimensions for CM3205-00TN devices packaged in 5-
lead, standard TO-263 packages are presented below.
* This is an approximate amount which may vary.
Package Dimensions for Standard TO-263
PACKAGE DIMENSIONS
Package TO-263
Pins 5
Dimensions Millimeters Inches
Min Max Min Max
A4.34 4.60 0.171 0.181
b0.74 0.89 0.029 0.035
c0.33 0.43 0.013 0.017
D8.92 9.17 0.351 0.361
E10.16 10.67 0.400 0.420
e1.70 REF 0.067 REF
L14.61 15.88 0.575 0.625
L1 2.29 2.79 0.090 0.110
L2 1.14 1.40 0.045 0.055
M0.23 0.30 0.009 0.012
P1.14 1.40 0.045 0.055
S1.40 1.91 0.055 0.075
# per tape
and reel
750 pieces
Controlling dimension: inches
Mechanical Package Diagrams
TOP VIEW
54
e
D
L
b
A
SIDE VIEW
E
P
LEADFORM
123
18-22°L2
S
c
7
°
7
°
3
°
L1
M
SEATING PLANE
0
°
-8
°
Pin 1
Marking
Mechanical Details
© 2006 California Micro De vices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 10
CM3205
PRELIMINARY
TO-252-5 Mechanical Specifications
Dimensions for CM3205-00TP devices packaged in 5-
pin TO-252 packages are presented below.
Package Dimensions for TO252-5
PACKAGE DIMENSIONS
Package TO-252
Pins 5
Dimensions Millimeters Inches
Min Max Min Max
A6.40 6.80 0.252 0.268
B5.20 5.50 0.205 0.217
C6.80 7.20 0.268 0.283
D2.20 2.80 0.087 0.110
G0.40 0.60 0.016 0.024
H2.20 2.40 0.087 0.094
J0.45 0.55 0.018 0.022
K0 0.15 0 0.006
L0.90 1.50 0.035 0.059
M5.40 5.80 0.213 0.228
P1.27 REF 0.05 REF
S0.50 0.80 0.020 0.031
# per tape
and reel
750 pieces
Controlling dimension: inches
Mechanical Package Diagrams
FRONT VIEW
54
P
MC
G
H
SIDE VIEW
A
J
LEADFORM
123
L2
c
0
°
-15
°
L
K
SEATING PLANE
0
°
-10
°
Pin 1
Marking
BACK VIEW
D1
B
E1
D
S
Mechanical Details (cont’d)