SUPERTEX INC 1 01 deffarzaecs ooo 2 T- 39~/ Ordering Information N-Channel Enhancement-Mode Vertical DMOS Power FETs BV ogg / Rosion leon Order Number / Package BVoas (max) (min) T0-3 TO-39 TO-220 Dice 60V 0.72 8.0A VN1106N4 VN1106N2 VN1106N5 | VN1106ND 100V 0.70 8.0A VN1110N1 VN1110N2 VN1110N5 N1110ND Features Advanced DMOS Technology O Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- C1 Low power drive requirement ize a vertical DMOS structure and Supertexs well-proven silicon- gate manufacturing process. This combination produces devices Ease of paralleling with the power handling capabilities of bipolar transistors and with O towc d fast switchi d the high input impedance and negative temperature coefficient OW Migs ANG Vast ew! mg speeds inherent in MOS devices. Characteristic of all MOS structures, C Excellent thermal stability these devices are free from thermal runaway and thermally- 1 Integral Source-Drain diode induced secondary breakdown. oh j ; : F Supertex Vertical DMOS Power FETs are ideally suited to a wide CD High di d high P Y igh input impedance and high gain ; range of switching and amplifying applications where high break- 1 Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options (Note 1) O Motor control O Converters 0 CO Amplifiers ey: P > O Switches a O Power supply circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) TO-39 TO-220 : : cD Absolute Maximum Ratings > : Drain-to-Source Voltage BV ps6 [7 Drain-to-Gate Voltage BV os TO Gate-to-Source Voltage 20V Operating and Storage Temperature -55C to +150C Soldering Temperature* 300C Note 1: See Package Outline section for discrete pinouts. { Distance of 1.6 mm from case for 10 seconds. 8-73 faSUPERTEX INC 01 ve farzaess ooo1ya y = as VN11A Thermal Characteristics T-39-1/ Package I, (continuous)* |, (pulsed)* Power Dissipation % 5. lor lona @T, = 26C CW CiW TO-3 9.0A 20A 75W 41 1.6 9A 20A TO- 39 2.54 6A 6W 125 20.8 2.5A 6A TO - 220 7.0A 18A 45W 70 2.7 7A 18A "lo (continuous) is limited by max rated T,. Electrical Characteristics (@ 25C unless otherwise specified) ( Notes 1 and 2) Symbol Parameter Min Typ Max Unit Conditions BVDSsSs Drain-to-Source VN1110 100 Breakdown Voltage VN1106 60 Vv VGS =0, ID=5mA VGS(th} Gate Threshold Voltage 0.8 2.4 Vv VGS=VbS, ID = 5mA AVGS(th) Change in VGS{th) with Temperature 4 -6 mwC | VGS = VDS, ID =5mA IGss Gate Body Leakage 100 nA VGS = +20V, VDS = 0 IDSs Zero Gate Voltage Drain Current 50 LA VGs = 0, VDS = Max Rating VGS = 0, VDS = 0.8 Max Rating 1 mA | Ta = 125C ID(ON) ON-State Drain Current 3 5 A VGS = 5V, VDS = 25V 8 15 VGS = 10V, VDS = 25V RDS(ON) Static Drain-to-Source 0.7 1.0 VGS=5V,ID=3A ON-State Resistance 0.4 0.7 2 VGS = 10V, ID =5A ARDS(ON) | Change in RDS(ON) with Temperature 0.3 08 | 4c | vVGs=10V,ID=5A Grs Forward Transconductance 1 2 5 VDS = 26V, ID =3A Ciss Input Capacitance 240 350 _ Coss Common Source Output Capacitance 150 200 pF ss oe VDS = 25V Crss Reverse Transfer Capacitance 16 25 7 2 td(ON) Turn-ON Delay Time 10 45 _ tr Rise Time 5 | 10] os MOO td (OF F} Turn-OFF Delay Time 35 45 ae 500 i tf Fall Time 20 35 8 VSD Diode Forward Voltage Drop 1.2 1.6 Vv vgs = 0, ISD =5A 1 tr Reverse Recovery Time 300 ns VGS=0, ISD=1A Note t: AIlO.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 800ms pulse, 2% duty cycle.) Note 2: AilA.C. parameters sample tested. Switching Waveforms and Test Circuit / 4.90% INPUT = te t(ON) t(OFF) > > SCOPE td(ON] tr tdlOFF) tf D.U.T. OUTPUT 5y3 \ an 90% 4 90% ane eos a Soe a omeren ral bot| SUPERTEX INC 01 de Perzaeqs ooomsy sb FD . VNi1A Typical Performance Curves 7-3 9-4 Output Characteristics Saturation Characteristics r \ R a rd i ur Ww f a = z z | a a : 0 10 20 30 40 50 0 2 4 6 8 10 i Vps (VOLTS) Vps (VOLTS) | Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature i 400 | Vs = T, =-55C i c a - . 5_| Zz a E 60 & 2 g a | 0 0 4 8 12 16 20 0 25 60 75 100 125 150 J Ip (AMPERES) Te PC) Maximum Rated Safe Operating Area Thermal Response Characteristics i 5 a wy N 3 < = fe _ fe) 8 +220 (DC) 2 i 9 & TO - 36 (DC) 2 g i a an -_ Ww oc J t gt z = t & w To = 25C ad Pp= 0.1 1 10 400 Vps (VOLTS) 0.001 0,01 0.1 1.0 10 Pulse Condition: 300 us ,2% dutycycle. tp (SECONDS) 8-75 ~ a Se ese we ee ee tne ee eee nee Me en| SUPERTEX INC on ve farz7sess ooowys a ff 1 VNTIA T-39-/ BVDss Variation with Temperature ON - Resistance Vs. Drain Current 1.26 1.16 a wy - N g g 1.05 & 5 zZ 2 0.95 9g a . a 8 i > oO 0.85 0.75 -50 0 50 100 150 0 4 8 12 16 20 j Ty Pe) Ips (AMPERES) Transfer Characteristics Vith) and RDS Variation with Temperature 1.45 VbS = 25V 1.30 a a = N I B a a w $ 1.15 z Ww 2 o x S i < 2 2 H = = 1.0 S i! 2 = zZ A 8 8 H > 0.85 ia Es 0.70 0 2 4 6 8 10 50 0 50 100 150 F Ves (VOLTS) Ty PC) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics Hy 480 f= 1MHz 360 g - 5 < 240 CL Ciss 4 uw > a 2 N 3 S Pp] > 120 XQ Coss _! Crss 0 o 10 20 30 40 0 1 2 3 4 6 Vps (VOLTS) Og (NANOCOULOMBS) 8-76 ee ewes, SLD tS