PANASONIC INDL/ELEK {IC} 126 D @@ 6932852 00104e5 4 a Silicon NPN Power rau Transistors TO-220 Package Absolute Maximum Ratings (Ta=25C) . . - - tem Symbol | TiP3i | TIP31A | TiP318| TiPsic | Unit | Applications: Co Collector-Base Voltage veso | 40 | 60 | 80 | 100 | V Compton tony oer win eed Swliching Collector-Emitter Voltage Voce 40 60 80 100 v TIP32, TIPa2A, TIP32B, TIP32C Emitter-Base Voltage VeBo _ 5 Vv Collector Current ic 3 A_| Features: . at 25C case temperature Peak Collector Current icm 5 A * 8A rated collector current Power Dissipation (To=25C) | Po 40 w | Min. fr of SMHz at 10V, 500mA Junction Temperature Tj 65~ +150 C Storage Temperature Tstg 65~ +150 C * Electrical Characteristics (Ta= 25C) - TIP3t | TIP31A | TIP31B | TIP31C Item - Symbol Condition : min. max.jmin. max.| min. max. |min. max.) Unit Collector-Emitter Voltage VcEO tc=30mA, IB=0 40 60 80 100 Vv VcE=30V, IB=0 0.3 0.3 Collector Cutoff Current IcEo VceE=60V, lB=0 0.3 0.3 mA Vce=40V, Vee=0 0.2 VcE=60V, VeeE=0 02 Collector Cutoff Currant IcES VceE=80V, Vee=0 0.2 mA VceE=100V, Vee=0 0.2 VcE=4V, Ic=1A 25 25 25 25 DC Current Gain hre Vce=4V, lc=3A 10 50] 10 50] 10 50 ;10 50 . Base-Emitter Voltage Vee -| Vce=4V, ic=3A 1.8 18 1.8 1.8 Vv Collector-Emitter Saturation Voltage | Vce(sat)} Io=3A, __[B=375mA 1.2 12 1.2 1.2 Vv VcE=10V, Ic=0.5A, f=1kHz 20 20 20 20 Small-Signal Current Gain hte VceE=10V, Ic=0.5A, f=iMHz 3 3 3 3 Turn-on Time ton Ic=1A, !p1=1t00mA, IB2=100mA 0.5 (typ.) BS Turn-off Time toft ~VBE(oN=4.3V, AL=300 3 (typ.) BS The device specifications are subject to change without prior notice. Unit: inch 2 0,189 0,05! ' te 0.106mer. 0.028nex. 3 1: Base 2: Collector 3: Emitter THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB)PANASONIC INDL/ELEK {IC} Typical Characteristics BeE D MM 64324852 OOLO4eb TM FU BB+ Pc vs. Ta characteristics arc) Thermal Resistance vs. t (1 Wehoxe heaton RtheC/W) tisec) Area of Safe Operation (ASO) (Te=25C) 100 > DDG Opetiion 3 fr(MHz) (2) With a 100x 10022 Al heat sink. r { Collector Current ic(A) 2 fr vs. le characteristics Vac vs. Ic characteristics a os a 18 Veeisan VS. Ie characteristics DC Current Gain - * . Veevs, le characteristics Cob vs. Vcp characteristics hre vs Ic characteristics ot "Collect Current lo(A)