2016 Microchip Technology Inc. DS20005509A-page 1
2N6660
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
•Converters
Amplifiers
Switches
Power supply circuits
Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.
Description
2N6660 is an enhancement-mode (normally-off) tran-
sistor that utilizes a vertical DMOS structure and a well-
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS struc-
tures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very-
low threshold voltage, high breakdown voltage, high-
input impedance, low-input capacitance, and fast
switching speeds are desired.
Package Types
TO-39
See Table 2-1 for pin information
Case: Drain
GATE
SOURCE
DRAIN
N-Channel, Enhancement-Mode, Vertical DMOS FET
2N6660
DS20005509A-page 2 2016 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Drain-to-source voltage .........................................................................................................................................BVDSS
Drain-to-gate voltage.............................................................................................................................................BVDGS
Gate-to-source voltage............................................................................................................................................ ±20V
Operating and Storage Temperature.......................................................................................................... -55 to 150 °C
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C
Parameter Symbol Min Typ Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
Drain-to-source breakdown voltage BVDSS 60 - - V VGS= 0V, ID= 10µA
Gate threshold voltage VGS(th) 0.8 - 2.0 V VGS= VDS, ID= 1.0mA
VGS(th) change with temperature VGS(th) --3.8-5.5mV/°CV
GS= VDS, ID= 1.0mA (Note 2)
Gate body leakage current IGSS - - 100 nA VGS= ±20V, VDS= 0V
Zero gate voltage drain current IDSS --10µAV
GS= 0V, VDS= Max rating
- - 500 VDS= 0.8 Max Rating,
VGS= 0V, TA= 125°C (Note 2)
On-state drain current ID(ON) 1.5 - - A VGS= 10V, VDS= 10V
Static drain-to-source on-state
resistance
RDS(ON) --5.0VGS= 5.0V, ID= 0.3A
--3.0 V
GS= 10V, ID= 1.0A
AC Parameters (Note 2)
Forward transconductance GFS 170 - - mmho VDS= 25V, ID= 0.5A
Input capacitance CISS --50pFV
GS= 0V,
VDS= 24V,
f = 1.0MHz
Common source output capacitance COSS --40
Reverse transfer capacitance CRSS --10
Turn-on time t(ON) --10nsV
DD= 25V, ID= 1.0A,
RGEN= 25
Turn-off time t(OFF) --10
Diode Parameters
Diode forward voltage drop VSD -1.2- VV
GS= 0V, ISD= 1.0A (Note 1)
Reverse recovery time trr -350- nsV
GS= 0V, ISD= 1.0A (Note 2)
TEMPERATURE SPECIFICATIONS
Parameter Symbol Min Typ Max Units Conditions
Temperature Ranges
Operating and Storage Temperature TA-55 150 °C
2016 Microchip Technology Inc. DS20005509A-page 3
2N6660
Note 1: ID (continuous) is limited by max rated TJ.
2.0 PIN DESCRIPTION
The locations of the pins are listed in Package Types
and Packaging Information.
THERMAL CHARACTERISTICS
Package
ID(1)
continuous
(mA)
ID
pulsed
(A)
Power
Dissipation
@TA = 25°C (W)
IDR(1)
(mA)
IDRM
(A)
TO-39 410 3.0 6.25 410 3.0
Product Summary
BVDSX/BVDGS
(V)
RDS(ON)
(max) ()
IDSS
(min) (A)
60 3.0 1.5
TABLE 2-1: PIN DESCRIPTION
Pin # TO-39 Function
1 SOURCE
2GATE
3 DRAIN
2N6660
DS20005509A-page 4 2016 Microchip Technology Inc.
3.0 FUNCTIONAL DESCRIPTION
Figure 3-1 shows the switching waveform and test cir-
cuit for 2N6660.
FIGURE 3-1: Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
2016 Microchip Technology Inc. DS20005509A-page 5
2N6660
4.0 PACKAGING INFORMATION
4.1 Package Marking Information
Legend: XX...X Product Code or Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
3
e
3
e
3-Lead TO-39 Example
NNN
YYWW
XXXXXXXXXX
XX
e4 343
1605
2N6660
e4
2N6660
DS20005509A-page 6 2016 Microchip Technology Inc.
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2016 Microchip Technology Inc. DS20005509A-page 7
2N6660
APPENDIX A: REVISION HISTORY
Revision A (March 2016)
Converted Supertex Doc #DSFP-2N6660 to
Microchip DS20005509A.
Minor text changes throughout.
Update to Features.
2N6660
DS20005509A-page 8 2016 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: 2N6660 = N-Channel, Enhancement-Mode,
Vertical DMOS FET
Package: (blank) = TO-39, 3-lead
Environmental (blank) = Lead (Pb)-free/ROHS-compliant package
Media Type: (blank) = 500/Bag for TO-39 packages
Examples:
a) 2N6660 TO-39 package,
500/bag
PART NO. X
Device
X
Environmental
XX
Package
Options
Media
--
Type
2016 Microchip Technology Inc. DS20005509A-page 9
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
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The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
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RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2016, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0433-0
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
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are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
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QUALITYMANAGEMENTS
YSTEM
CERTIFIEDBYDNV
== ISO/TS16949==
DS20005509A-page 10 2016 Microchip Technology Inc.
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