COMSET SEMICONDUCT ORS 2/2
2N3055
EL ECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
VCEO(SUS) Collector-Emitter Sustaining
Voltage (1) IC=200 mAdc, IB=0 60 - - Vdc
BVCER Collector-Emitter
Break do wn Voltag e (1) IC=200 mAdc, RBE=100Ω70 - - Vdc
ICEO Collector-Emitter Curre nt CVE=30 Vdc, IB=0 - - 0.7 mAdc
VCE=100 Vdc, VEB(off)= 1.5 Vdc - - 5.0
ICEX Collector Cutoff Current VCE=100 Vdc, VEB(off)=1.5 Vdc,
TC=150°C 30 mAdc
IEBO Emitter Cutoff Current VBE=7.0 Vdc, IC=0 - - 5.0 mAdc
IC=4.0 Adc, VCE=4.0 Vdc 20 - 70
hFE DC Current Gain IC=10 Adc, VCE=4.0 Vdc 5.0 - -
IC=4.0 Adc, IB=0.4Adc - - 1.1
VCE(SAT) Collector-Emitter saturation
Voltage IC=10 Adc, IB=3.3Adc 8.0 Vdc
VBE Base-Emitter Voltage IC=4.0 Adc, VCE=4.0 Vdc - 1.8 - Vdc
hfe Small Signal Current Gain VCE=4.0 Vdc, IC=1.0 Adc, f=1.0 kHz 15 - 120 -
fα
αα
αeSmall Signal Current Gain
Cutoff Frequency VCE=4.0 Vdc, IC+=1.0 Adc, f=1.0 kHz 10 - - kHz
Is/b Second Breakdown
Collector Current t=1 S (non repetitive), VCE=60 Vdc 1.95 - - A
In accordance with JEDEC Registration Data
(1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL CHARACTERISTICS CASE-TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Emitter
Case : Collector
Information furnished is believed to be accurate and reliable. How ever, CS assumes no respons abili ty
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without not ice.