SST26WF032-80-4I-QAE - Microchip Technology, Inc.

Advance Information

www.sst.com

Features:

• Single Voltage Read and Write Operations

– 1.65-1.95V

• Serial Interface Architecture

– Nibble-wide multiplexed I/O’s with SPI-like serial com-

mand structure

- Mode 0 and Mode 3

– Single-bit, SPI backwards compatible

- Read, High-Speed Read, and JEDEC ID Read

• High Speed Clock Frequency

– 80 MHz

- 320 Mbit/s sustained data rate

• Burst Modes

– Continuous linear burst

– 8/16/32/64 Byte linear burst with wrap-around

• Superior Reliability

– Endurance: 100,000 Cycles

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Read current: 12 mA (typical @ 80 MHz)

– Standby Current: 8 µA (typical)

• Fast Erase and Byte-Program:

– Chip-Erase time: 35 ms (typical)

– Sector-/Block-Erase time: 18 ms (typical)

• Page-Program

– 256 Bytes per page

– Fast Page Program time in 1 ms (typical)

• End-of-Write Detection

– Software polling the BUSY bit in status register

• Flexible Erase Capability

– Uniform 4 KByte sectors

– Four 8 KByte top and bottom parameter overlay blocks

– Two 32 KByte top and bottom overlay blocks

– Uniform 64 KByte overlay blocks

- SST26WF032 – 62 blocks

• Write-Suspend

– Suspend Program or Erase operation to access another

block/sector

• Software Reset (RST) mode

• Software Write Protection

– Individual Block-Locking

- 64 KByte blocks, two 32 KByte blocks, and eight 8

KByte parameter blocks

– Write Lock, Read Lock, and Lockdown options

• Security ID

– One-Time Programmable (OTP) 256 bit, Secure ID

- 64 bit unique, factory pre-programmed identifier

- 192 bit user-programmable

• Temperature Range

– Industrial: -40°C to +85°C

• Packages Available

– 8-contact WSON (6mm x 5mm)

– 8-lead SOIC (200 mil)

• All devices are RoHS compliant

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

The SST26WF032 Serial Quad I/O™ (SQI™) flash device utilizes a 4-bit mul-

tiplexed I/O serial interface to boost performance while maintaining the com-

pact form factor of standard serial flash devices. Operating at frequencies

reaching 80 MHz, the SST26WF032 enables minimum latency execute-in-

place (XIP) capability without the need for code shadowing on an SRAM. The

device’s high performance and small footprint make it the ideal choice for

mobile handsets, Bluetooth headsets, optical disk drives, GPS applications

and other portable electronic products. Further benefits are achieved with

SST’s proprietary, high-performance CMOS SuperFlash® technology, which

significantly improves performance and reliabilit y, and lowers power consump-

tion for high bandwidth, compact designs.

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Product Description

The Serial Quad I/O™ (SQI™) family of flash-memory devices features a 4-bit, multiplexed I/O inter-

face that allows for low-power, high-performance operation in a low pin-count package. System

designs using SQI flash devices occupy less board space and ultimately lower system costs.

All members of the 26 Series, SQI family are manufactured with SST proprietary, high-performance

CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain bet-

ter reliability and manufacturability compared with alternate approaches.

The SST26WF032 significantly improves performance and reliability, while lowering power consump-

tion. This device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy

consumed is a function of the applied voltage, current, and time of application. Since for any given volt-

age range, the SuperFlash technology uses less current to program and has a shorter erase time, the

total energy consumed during any Erase or Program operation is less than alternative flash memory

technologies.

SST26WF032 is offered in both 8-contact WSON (6 mm x 5 mm), and 8-lead SOIC (200 mil) pack-

ages. See Figure 2 for pin assignments.

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Block Diagram

Figure 1: Functional Block Diagram

1409 B1.0

Page Buffer,

I/O Buffers

and

Data Latches

SuperFlash

Memory

X - Decoder

Control Logic

Address

Buffers

and

Latches

CE#

Y - Decoder

SCK SIO [3:0]

Serial Interface

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Pin Description

Figure 2: Pin Description for 8-lead SOIC and 8-contact WSON

Table 1: Pin Description

Symbol Pin Name Functions

SCK Serial Clock To provide the timing of the serial interface.

Commands, addresses, or input data are latched on the rising edge of the

clock input, while output data is shifted out on the falling edge of the clock

input.

SIO[3:0] Serial Data

Input/Output

To transfer commands, addresses, or data serially into the device or data out

of the device. Inputs are latched on the rising edge of the serial clock. Data is

shifted out on the falling edge of the serial clock. The EQIO command

instruction configures these pins for Quad I/O mode.

SI Serial Data Input

for SPI mode

To transfer commands, addresses or data serially into the device. Inputs are

latched on the rising edge of the serial clock. SI is the default state after a

power on reset.

SO Serial Data Output

for SPI mode

To transfer data serially out of the device. Data is shifted out on the falling

edge of the serial clock. SO is the default state after a power on reset.

CE# Chip Enable The device is enabled by a high to low transition on CE#. CE# must remain

low for the duration of any command sequence; or in the case of Write oper-

ations, for the command/data input sequence.

VDD Power Supply To provide power supply voltage: 1.65-1.95V

VSS Ground

T1.0 1409

CE#

SO/SIO1

SIO2

VSS

VDD

SIO3

SCK

SI/SIO0

To p V i e w

1409 08-soic S2A P1.0

CE#

SO/SIO1

SIO2

VSS

Top View

VDD

SIO3

SCK

SI/SIO0

1409 08-wson QA P1.0

8-Lead SOIC 8-Contact WSON

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Memory Organization

The SST26WF032 SQI memory array is organized in uniform, 4 KByte erasable sectors with erasable

overlay blocks: eight 8 KByte parameter blocks, two 32 KByte blocks, and sixty-two 64 KByte blocks.

See Figure 3.

Figure 3: Memory Map

1409 F41.0

Top of Memory Block

8 KByte

32 KByte

64 KByte

32 KByte

8 KByte

Bottom of Memory Block

4 KByte

. . .

2 Sectors for 8 KByte blocks

8 Sectors for 32 KByte blocks

16 Sectors for 64 KByte blocks

. . .

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Device Operation

The SST26WF032 supports both Serial Peripheral Interface (SPI) bus protocol and the new 4-bit mul-

tiplexed Serial Quad I/O (SQI) bus protocol. To provide backward compatibility to traditional SPI Serial

Flash devices, the device’s initial state after a power-on reset is SPI bus protocol supporting only

Read, High Speed Read, and JEDEC-ID Read instructions. A command instruction configures the

device to Serial Quad I/O bus protocol. The dataflow in this bus protocol is controlled with four multi-

plexed I/O signals, a chip enable (CE#), and serial clock (SCK).

SQI Flash Memory protocol supports both Mode 0 (0,0) and Mode 3 (1,1) bus operations. The differ-

ence between the two modes, as shown in Figures 4 and 5, is the state of the SCK signal when the

bus master is in Stand-by mode and no data is being transferred. The SCK signal is low for Mode 0

and SCK signal is high for Mode 3. For both modes, the Serial Data I/O (SIO[3:0]) is sampled at the ris-

ing edge of the SCK clock signal for input, and driven after the falling edge of the SCK clock signal for

output. The traditional SPI protocol uses separate input (SI) and output (SO) data signals as shown in

Figure 4. The SST26WF032 uses four multiplexed signals, SIO[3:0], for both data in and data out, as

shown in Figure 5. This quadruples the traditional bus transfer speed at the same clock frequency,

without the need for more pins on the package.

Figure 4: SPI Protocol (Traditional 25 Serial SPI Device)

Figure 5: SQI Serial Quad I/O Protocol

1409 F03.0

MODE 3

SCK

CE#

MODE 3

DON'T CARE

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

MODE 0MODE 0

HIGH IMPEDANCE

MSB

1409 F04.1

MODE 3

CLK

SIO(3:0)

CE#

MODE 3

C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2 H3 L3

MODE 0MODE 0

MSB

X = Don’t Care or High Impediance

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Device Protection

The SST26WF032 has a Block-Protection register which provides a software mechanism to write-lock

the array and write-lock, and/or read-lock, the parameter blocks. The Block-Protection Register is 80

bits wide per device: two bits each for the eight 8 KByte parameter blocks (write-lock and read-lock),

and one bit each for the remaining 32 KByte and 64 KByte overlay blocks (write-lock). See Table 8 for

address range protected per register bit.

Each bit in the Block-Protection Register can be written to a ‘1’ (protected) or ‘0’ (unprotected). For the

parameter blocks, the most significant bit is for read-lock, and the least significant bit is for write-lock. Read-

locking the parameter blocks provides additional security for sensitive data after retrieval (e.g., after initial

boot). If a block is read-locked all reads to the block return data 00H. All blocks are write-locked and read-

unlocked after power-up. The Write Block Locking Register command is a two cycle command requiring

Write-Enable (WREN) to be executed prior to the Write Block-Protection Register command.

Figure 6: Block Locking Memory Map

1409 F40.0

Top of Memory Block

8 KByte

32 KByte

64 KByte

32 KByte

8 KByte

Read Lock

Write Lock

Read Lock

Write Lock

Bottom of Memory Block

. . .

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Write-Protection Lock-Down

To prevent changes, the Block-Protection register can be set to Write-Protection Lock-Down using the

Lock Down Block Protection Register (LPBR) command. Once the Write-Protection Lock-Down is

enabled, the Block-Protection register can not be changed. To avoid inadvertent lock down, the WREN

command must be executed prior to the LBPR command.

To reset Write-Protection Lock-Down, power cycle the device. The Write-Protection Lock-Down status

may be read from the Status register.

Security ID

SST26WF032 offers a 256-bit Security ID (Sec ID) feature. The Security ID space is divided into two

parts – one factory-programmed, 64-bit segment and one user-programmable 192-bit segment. The

factory-programmed segment is programmed at SST with a unique number and cannot be changed.

The user-programmable segment is left unprogrammed for the customer to program as desired.

Use the SecID Program command to program the Security ID using the address shown in Table 7.

Once programmed, the Security ID can be locked using the Lockout Sec ID command. This prevents

any future write to the Security ID.

The factory-programmed portion of the Security ID can’t be programmed by the user; neither factor-

programmed nor user-programmable areas can be erased.

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Status Register

The Status register is a read-only register that provides status on whether the flash memory array is

available for any Read or Write operation, whether the device is Write enabled, and whether an erase

or program operation is suspended. During an internal Erase or Program operation, the Status register

may be read to determine the completion of an operation in progress. Table 2 describes the function of

each bit in the Status register.

Table 2: Status Register

Bit Name Function

Default at

Power-up

0 RES Reserved for future use 0

1 WEL Write-Enable Latch status

1 = Device is memory Write enabled

0 = Device is not memory Write enabled

2 WSE Write Suspend-Erase status

1 = Erase suspended

0 = Erase is not suspended

3 WSP Write Suspend-Program status

1 = Program suspended

0 = Program is not suspended

4 WPLD Write Protection Lock-Down status

1 = Write Protection Lock-Down enabled

0 = Write Protection Lock-Down disabled

5SEC

1. The Security ID status will always be ‘1’ at power-up after a successful execution of the Lockout Sec ID instruction, oth-

erwise default at power-up is ‘0’.

Security ID status

1 = Security ID space locked

0 = Security ID space not locked

6 RES Reserved for future use 0

7 BUSY Write operation status

1 = Internal Write operation is in progress

0 = No internal Write operation is in progress

T2.0 1409

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Write-Enable Latch (WEL)

The Write-Enable Latch (WEL) bit indicates the status of the internal memory’s Write-Enable Latch. If

the WEL bit is set to ‘1’, the device is write enabled. If the bit is set to ‘0’ (reset), the device is not write

enabled and does not accept any memory Program or Erase, Protection Register Write, or Lock-Down

commands. The Write-Enable Latch bit is automatically reset under the following conditions:

•Power-up

•Reset

•Write-Disable (WRDI) instruction completion

•Page-Program instruction completion

•Sector-Erase instruction completion

•Block-Erase instruction completion

•Chip-Erase instruction completion

•Write-Block-Protection register instruction

•Lock-Down Block-Protection register instruction

•Program Security ID instruction completion

•Lockout Security ID instruction completion

•Write-Suspend instruction

Write Suspend Erase Status (WSE)

The Write Suspend-Erase Status (WSE) indicates when an Erase operation has been suspended. The

WSE bit is ‘1’ after the host issues a suspend command during an Erase operation. Once the sus-

pended Erase resumes, the WSE bit is reset to ‘0.’

Write Suspend Program Status (WSP)

The Write Suspend-Program Status (WSP) bit indicates when a Program operation has been sus-

pended. The WSP is ‘1’ after the host issues a suspend command during the Program operation. Once

the suspended Program resumes, the WSP bit is reset to ‘0.’

Write Protection Lockdown Status (WPLD)

The Write Protection-Lockdown Status (WPLD) bit indicates when the Block Protection register is

locked-down to prevent changes to the protection settings. The WPLD is ‘1’ after the host issues a

Lock-Down Block Protection command. After a power cycle, the WPLD bit is reset to ‘0.’

Security ID Status (SEC)

The Security ID Status (SEC) bit indicates when the Security ID space is locked to prevent a Write

command. The SEC is ‘1’ after the host issues a Lockout SID command. Once the host issues a Lock-

out SID command, the SEC bit can never be reset to ‘0.’

Busy

The Busy bit determines whether there is an internal Erase or Program operation in progress. If the

BUSY bit is ‘1’, the device is busy with an internal Erase or Program operation. If the bit is ‘0’, no Erase

or Program operation is in progress.

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Instructions

Instructions are used to read, write (erase and program), and configure the SST26WF032. The

instruction bus cycles are two nibbles each for commands (Op Code), data, and addresses. Prior to

executing any write instructions, the Write-Enable (WREN) instruction must be executed. The com-

plete list of the instructions is provided in Table 3.

All instructions are synchronized off a high to low transition of CE#. Inputs are accepted on the rising

edge of SCK starting with the most significant nibble. CE# must be driven low before an instruction is

entered and must be driven high after the last nibble of the instruction has been input (except for read

instructions). Any low-to-high transition on CE# before receiving the last nibble of an instruction bus

cycle, will terminate the instruction being entered and return the device to the standby mode.

Table 3: Device Operation Instructions for SST26WF032

Instruction Description

Command

Cycle1Address

Cycle(s)2Dummy

Cycle(s)

Data

Cycle(s)

Maximum

Frequency

NOP No Operation 00H 0 0 0

80 MHz

RSTEN Reset Enable 66H 0 0 0

RST3Reset Memory 99H 0 0 0

EQIO Enable Quad I/O 38H 0 0 0

RSTQIO4Reset Quad I/O FFH 0 0 0

Read5Read Memory 03H 3 0 1 to ∞25 MHz

High-Speed Read5Read Memory at

Higher Speed

0BH 3 2 1 to ∞

80 MHz

Set Burst6Set Burst Length C0H 0 0 1

Read Burst nB Burst with Wrap 0CH 3 2 n to ∞

JEDEC-ID 5,7 JEDEC-ID Read 9FH 0 0 3 to ∞

Quad J-ID7Quad I/O J-ID Read AFH 0 0 3 to ∞

Sector Erase8Erase 4 KBytes of

Memory Array

20H 3 0 0

Block Erase9Erase 64, 32 or 8

KBytes of Memory

Array

D8H 3 0 0

Chip Erase Erase Full Array C7H 0 0 0

Page Program Program 1 to 256

Data Bytes

02H 3 0 1 to 256

Write Suspend Suspends Program/

Erase

B0H 0 0 0

Write Resume Resumes Program/

Erase

30H 0 0 0

Read SID Read Security ID 88H 1 2 1 to 32

Program SID10 Program User Secu-

rity ID area

A5H 1 0 1 to 24

Lockout SID10 Lockout Security ID

Programming

85H 0 0 0

RDSR11 Read Status Regis-

ter

05H 0 0 1 to ∞

WREN Write Enable 06H 0 0 0

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

No Operation (NOP)

The No Operation command only cancels a Reset Enable command. NOP has no impact on any other

command.

WRDI Write Disable 04H 0 0 0

80 MHz

RBPR12 Read Block Protec-

tion Register

72H 0 0 1 to m/4

WBPR10,12 Write Block Protec-

tion Register

42H 0 0 1 to m/4

LBPR10 Lock Down Block

Protection Register

8DH 0 0 0

T3.0 1409

1. One BUS cycle is two clock periods (command, access, or data).

2. Address bits above the most significant bit of each density can be VIL or VIH.

3. RST command only executed if RSTEN command is executed first. Any intervening command will disable Reset.

4. Device accepts eight-clock command in SPI mode, or two-clock command in SQI mode.

5. After a power cycle, Read, High-Speed Read, and JEDEC-ID Read instructions input and output cycles are SPI bus

protocol.

6. Burst length– n = 8 Bytes: Data(00H); n = 16 Bytes: Data(01H); n = 32 Bytes: Data(02H); n = 64 Bytes: Data(03H).

7. The Quad J-ID read wraps the three Quad J-ID Bytes of data until terminated by a low-to-high transition on CE#

8. Sector Addresses: Use AMS - A12, remaining address are don’t care, but must be set to VIL or VIH.

9. Blocks are 64 KByte, 32 KByte, or 8KByte, depending on location. Block Erase Address: AMS - A16 for 64 KByte; AMS -

A15 for 32 KByte; AMS - A13 for 8 KByte. Remaining addresses are don’t care, but must be set to VIL or VIH.

10. Requires a prior WREN command.

11. The Read-Status register is continuous with ongoing clock cycles until terminated by a low-to-high transition on CE#.

12. Data is written/read from MSB to LSB. MSB = 79 for SST26WF032.

Table 3: Device Operation Instructions for SST26WF032

Instruction Description

Command

Cycle1Address

Cycle(s)2Dummy

Cycle(s)

Data

Cycle(s)

Maximum

Frequency

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Reset-Enable (RSTEN) and Reset (RST)

The Reset operation is used as a system (software) reset that puts the device in normal operating

Ready mode. This operation consists of two commands: Reset-Enable (RSTEN) and Reset (RST).

To reset the SST26WF032, the host drives CE# low, sends the Reset-Enable command (66H), and

drives CE# high. Next, the host drives CE# low again, sends the Reset command (99H), and drives

CE# high, see Figure 7.

The Reset operation requires the Reset-Enable command followed by the Reset command. Any com-

mand other than the Reset command after the Reset-Enable command will disable the Reset-Enable.

A successful command execution will reset the burst length to 8 Bytes and all the bits in the Status reg-

ister to their default states, except for bit 4 (WPLD) and bit 5 (SEC). A device reset during an active

Program or Erase operation aborts the operation, which can cause the data of the targeted address

range to be corrupted or lost. Depending on the prior operation, the reset timing may vary. Recovery

from a Write operation requires more latency time than recovery from other operations.

Figure 7: Reset sequence

1409 F05.0

MODE 3

CLK

SIO(3:0)

CE#

MODE 3

C1 C3 C2C0

MODE 0

MODE 3

MODE 0MODE 0

TCPH

Note: C[1:0] = 66H; C[3:2] = 99H

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Read (25 MHz)

The Read instruction, 03H, is supported in SPI bus protocol only with clock frequencies up to 25 MHz.

This command is not supported in SQI bus protocol. The device outputs the data starting from the

specified address location, then continuously streams the data output through all addresses until ter-

minated by a low-to-high transition on CE#. The internal address pointer will automatically increment

until the highest memory address is reached. Once the highest memory address is reached, the

address pointer will automatically return to the beginning (wrap-around) of the address space.

Initiate the Read instruction by executing an 8-bit command, 03H, followed by address bits A23:A0.

CE# must remain active low for the duration of the Read cycle. SIO2 and SIO3 must be driven VIH for

the duration of the Read cycle. See Figure 8 for Read Sequence.

Figure 8: Read Sequence (SPI)

Enable Quad I/O (EQIO)

The Enable Quad I/O (EQIO) instruction, 38H, enables the flash device for SQI bus operation. upon

completion of the instruction, all instructions thereafter will be 4-bit multiplexed input/output until a

power cycle or a “Reset Quad I/O instruction” is executed. See Figure 9.

Figure 9: Enable Quad I/O Sequence

1409 F29.0

CE#

SCK

ADD.

012345678

ADD. ADD.

HIGH IMPEDANCE

15 16 23 24 31 32 39 40 7047 48 55 56 63 64

N+2 N+3 N+4N N+1

OUT

MSB MSB

MSB

MODE 0

MODE 3

OUT

Note: SIO2 and SIO3 must be driven VIH

1409 F43.0

MODE 3 0 1

SCK

SIO0

CE#

MODE 0

234567

SIO[3:1]

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Reset Quad I/O (RSTQIO)

The Reset Quad I/O instruction, FFH, resets the device to 1-bit SPI protocol operation. To execute a

Reset Quad I/O operation, the host drives CE# low, sends the Reset Quad I/O command cycle (FFH)

then, drives CE# high. The device accepts either SPI (8 clocks) or SQI (2 clocks) command cycles. For

SPI, SIO[3:1] are don’t care for this command, but should be driven to VIH or VIL.

High-Speed Read (80 MHz)

The High-Speed Read instruction, 0BH, is supported in both SPI bus protocol and SQI protocol. On

power-up, the device is set to use SPI.

Initiate High-Speed Read by executing an 8-bit command, 0BH, followed by address bits [A23-A0] and

a dummy byte. CE# must remain active low for the duration of the High-Speed Read cycle. SIO2 and

SIO3 must be driven VIH for the duration of the Read cycle. See Figure 10 for the High-Speed Read

sequence for SPI bus protocol.

Figure 10:High-Speed Read Sequence (SPI)

In SQI protocol, the host drives CE# low then send the Read command cycle command, 0BH, followed by three

address cycles and two dummy cycles. Each cycle is two nibbles (clocks) long, most significant nibble first.

After the dummy cycles, the 1.8V Serial Quad I/O (SQI) Flash Memory outputs data on the falling

edge of the SCK signal starting from the specified address location. The device continually streams

data output through all addresses until terminated by a low-to-high transition on CE#. The internal

address pointer automatically increments until the highest memory address is reached, at which point

the address pointer returns to address location 000000H.

During this operation, blocks that are Read-locked will output data 00H.

Figure 11:High-Speed Read and Read Burst Sequence (SQI)

1409 F31.0

CE#

SO/SIO1

SI/SIO0

SCK

ADD.

012345678

ADD. ADD.0B

HIGH IMPEDANCE

15 16 23 24 31 32 39 40 47 48 55 56 63 64

N+2 N+3 N+4

NN+1

MSB

MODE 0

MODE 3

OUT

71 72

OUT

Note: SIO2 and SIO3 must be driven VIH

Address Dummy

Command Data Byte 0

MSN LSN

Data Byte 8 Data Byte 9

1409 F44.1

012

SCK

SIO(3:0)

CE#

C1C0 A5 A4 A3 A2 A1 A0 X H0XXX L0 H8 L8 H9 L9

78 111091312 1918 2120

MODE 3

MODE 0

3456

Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Set Burst

The Set Burst command specifies the number of bytes to be output during a Read Burst command

before the device wraps around. To set the burst length the host drives CE# low, sends the Set Burst

command cycle (C0H) and one data cycle, then drives CE# high. A cycle is two nibbles, or two clocks,

long, most significant nibble first. After power-up or reset, the burst length is set to eight Bytes (00H).

See Table 4 for burst length data and Figure 12 for the sequence.

Figure 12:Set Burst Length Sequence

Read Burst

To execute a Read Burst operation the host drives CE# low, then sends the Read Burst command

cycle (0CH), followed by three address cycles, and then one dummy cycle. Each cycle is two nibbles

(clocks) long, most significant nibble first.

After the dummy cycle, the device outputs data on the falling edge of the SCK signal starting from the

specified address location. The data output stream is continuous through all addresses until termi-

nated by a low-to-high transition on CE#.

During Read Burst, the internal address pointer automatically increments until the last byte of the burst

is reached, then jumps to first byte of the burst. All bursts are aligned to addresses within the burst

length, see Table 5. For example, if the burst length is eight Bytes, and the start address is 06h, the

burst sequence would be: 06h, 07h, 00h, 01h, 02h, 03h, 04h, 05h, 06h, etc. The pattern would repeat

until the command was terminated by a low-to-high transition on CE#.

During this operation, blocks that are Read-locked will output data 00H.

Table 4: Burst Length Data

Burst Length High Nibble (H0) Low Nibble (L0)

8 Bytes 0h 0h

16 Bytes 0h 1h

32 Bytes 0h 2h

64 Bytes 0h 3h

T4.0 1409

Table 5: Burst Address Ranges

Burst Length Burst Address Ranges

8 Bytes 00-07H, 08-0FH, 10-17H, 18-1FH...

16 Bytes 00-0FH, 10-1FH, 20-2FH, 30-3FH...

32 Bytes 00-1FH, 20-3FH, 40-5FH, 60-7FH...

64 Bytes 00-3FH, 40-7FH, 80-BFH, C0-FFH

T5.0 1409

1409 F32.0

MODE 3 0 1

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

H0 L0

MSN LSN

Note: MSN = Most Significant Nibble,

LSN = Least Significant Nibble

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

JEDEC-ID Read (SPI Protocol)

Using traditional SPI protocol, the JEDEC-ID Read instruction identifies the device as SST26WF032

and the manufacturer as SST. To execute a JECEC-ID operation the host drives CE# low then sends

the JEDEC-ID command cycle (9FH). For SPI modes, each cycle is eight bits (clocks) long, most sig-

nificant bit first.

Immediately following the command cycle the device outputs data on the falling edge of the SCK sig-

nal. The data output stream is continuous until terminated by a low-to-high transition on CE#. The

device outputs three bytes of data: manufacturer, device type, and device ID, see Table 6. See Figure

13 for instruction sequence.

Figure 13:JEDEC-ID Sequence (SPI Mode)

Quad J-ID Read (SQI Protocol)

The Quad J-ID Read instruction identifies the device as SST26WF032 and manufacturer as SST. To

execute a Quad J-ID operation the host drives CE# low and then sends the Quad J-ID command cycle

(AFH). Each cycle is two nibbles (clocks) long, most significant nibble first.

Immediately following the command cycle the device outputs data on the falling edge of the SCK sig-

nal. The data output stream is continuous until terminated by a low-to-high transition of CE#. The

device outputs three bytes of data: manufacturer, device type, and device ID, see Table 6. See Figure

14 for instruction sequence.

Table 6: Device ID Data Output

Product

Manufacturer ID

(Byte 1)

Device ID

Device Type

(Byte 2)

Device ID

(Byte 3)

SST26WF032 BFH 26H 22H

T6.1 1409

26 Device ID

1409 F38.0

CE#

SCK

012345678

HIGH IMPEDANCE

15 1614 28 29 30 31

MODE 3

MODE 0

MSBMSB

9 10111213 1718 32 34

19 20 21 22 23 3324 25 26 27

Note: SIO2 and SIO3 must be driven VIH

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Figure 14:Quad J-ID Read Sequence

Sector-Erase

The Sector-Erase instruction clears all bits in the selected 4 KByte sector to ‘1,’ but it does not change

a protected memory area. Prior to any write operation, the Write-Enable (WREN) instruction must be

executed.

To execute a Sector-Erase operation, the host drives CE# low, then sends the Sector Erase command

cycle (20H) and three address cycles, and then drives CE# high. Each cycle is two nibbles, or clocks,

long, most significant nibble first. Address bits [AMS:A12] (AMS = Most Significant Address) determine

the sector address (SAX); the remaining address bits can be VIL or VIH. Poll the BUSY bit in the Status

15 for the Sector-Erase sequence.

Figure 15:4 KByte Sector-Erase Sequence

1409 F39.0

MODE 3 0

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

H0 L0

MSN LSN

H1 L1

H2 L2

H0 L0

H1 L4

H2 L2

HN LN

BFH N

26H Device ID BFH 26H Device ID

Note: MSN = Most significant Nibble; LSN= Least Significant Nibble

C[1:0]=AFH

1409 F07.0

MODE 3 0 1

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

A5 A4

MSN LSN

A3 A2

A1 A0

Note: MSN = Most Significant Nibble,

LSN = Least Significant Nibble

C[1:0] = 20H

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Block-Erase

The Block-Erase instruction clears all bits in the selected block to ‘1’. Block sizes can be 8 KByte, 32

KByte or 64 KByte depending on address, see Figure 3, Memory Map, for details. A Block-Erase

instruction applied to a protected memory area will be ignored. Prior to any write operation, execute

the WREN instruction. Keep CE# active low for the duration of any command sequence.

To execute a Block-Erase operation, the host drives CE# low then sends the Block-Erase command

cycle (D8H), three address cycles, then drives CE# high. Each cycle is two nibbles, or clocks, long,

most significant nibble first. Address bits AMS-A13 determine the block address; the remaining address

bits can be VIL or VIH. For 32 KByte blocks, A14:A13 can be VIL or VIH; for 64 KByte blocks, A15:A13 can

be VIL or VIH. Poll the BUSY bit in the Status register or wait TBE for the completion of the internal, self-

timed, Block-Erase operation See Figure 16 for the Block-Erase sequence.

Figure 16:Block-Erase Sequence

Chip-Erase

The Chip-Erase instruction clears all bits in the device to ‘1.’ The Chip-Erase instruction is ignored if

any of the memory area is protected. Prior to any write operation, execute the the WREN instruction.

To execute a Chip-Erase operation, the host drives CE# low, sends the Chip-Erase command cycle

(C7H), then drives CE# high. A cycle is two nibbles, or clocks, long, most significant nibble first. Poll the

BUSY bit in the Status register or wait TCE for the completion of the internal, self-timed, Chip-Erase

operation. See Figure 17 for the Chip Erase sequence.

Figure 17:Chip-Erase Sequence

1409 F08.0

MODE 3 0 1

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

A5 A4

MSN LSN

A3 A2

A1 A0

Note: MSN = Most Significant Nibble,

LSN = Least Significant Nibble

C[1:0] = D8H

1409 F09.0

MODE 3 0 1

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

Note: C[1:0] = C7H

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Page-Program

The Page-Program instruction programs up to 256 Bytes of data in the memory. The data for the

selected page address must be in the erased state (FFH) before initiating the Page-Program operation.

A Page-Program applied to a protected memory area will be ignored. Prior to the program operation,

execute the WREN instruction.

To execute a Page-Program operation, the host drives CE# low then sends the Page Program com-

mand cycle (02H), three address cycles followed by the data to be programmed, then drives CE# high.

The programmed data must be between 1 to 256 Bytes and in whole Byte increments; sending an odd

number of nibbles will cause the last nibble to be ignored. Each cycle is two nibbles (clocks) long, most

significant bit first. Poll the BUSY bit in the Status register or wait TPP for the completion of the internal,

self-timed, Page-Program operation. See Figure 18 for the Page-Program sequence.

When executing Page-Program, the memory range for the SST26WF032 is divided into 256 Byte page

boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last 256

Bytes of data as the correct data to be programmed. If the target address for the Page-Program

instruction is not the beginning of the page boundary (A7:A0 are not all zero), and the number of data

input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap

around and will be programmed at the start of that target page.

Figure 18:Page-Program Sequence

Write-Suspend and Write-Resume

Write-Suspend allows the interruption of Sector-Erase, Block-Erase or Page-Program operations in

order to erase, program, or read data in another portion of memory. The original operation can be con-

tinued with the Write-Resume command.

Only one write operation can be suspended at a time; if an operation is already suspended, the device

will ignore the Write-Suspend command. Write-Suspend during Chip-Erase is ignored; Chip-Erase is

not a valid command while a write is suspended.

Write-Suspend During Sector-Erase or Block-Erase

Issuing a Write-Suspend instruction during Sector-Erase or Block-Erase allows the host to program or

read any sector that was not being erased. The device will ignore any programming commands point-

ing to the suspended sector(s). Any attempt to read from the suspended sector(s) will output unknown

data because the Sector- or Block-Erase will be incomplete.

1409 F10.0

MODE 3 0

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

A5 A4

MSN LSN

A3 A2

A1 A0

H0 L0

H1 L1

H2 L2

542

HN LN

Data Byte 0 Data Byte 1 Data Byte 2 Data Byte 255

Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble

C[1:0] = 02H

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

To execute a Write-Suspend operation, the host drives CE# low, sends the Write Suspend command

cycle (B0H), then drives CE# high. A cycle is two nibbles long, most significant nibble first. The Status

device will not accept another command until it is ready. To determine when the device will accept a

new command, poll the BUSY bit in the Status register or wait TWS.

Write Suspend During Page Programming

Issuing a Write-Suspend instruction during Page Programming allows the host to erase or read any

sector that is not being programmed. Erase commands pointing to the suspended sector(s) will be

ignored. Any attempt to read from the suspended page will output unknown data because the program

will be incomplete.

To execute a Write Suspend operation, the host drives CE# low, sends the Write Suspend command

cycle (B0H), then drives CE# high. A cycle is two nibbles long, most significant nibble first. The Status

but the device will not accept another command until it is ready. To determine when the device will

accept a new command, poll the BUSY bit in the Status register or wait TWS.

Write-Resume

Write-Resume restarts a Write command that was suspended, and changes the suspend status bit in

the Status register (WSE or WSP) back to ‘0’.

To execute a Write-Resume operation, the host drives CE# low, sends the Write Resume command

cycle (30H), then drives CE# high. A cycle is two nibbles long, most significant nibble first. To deter-

mine if the internal, self-timed Write operation completed, poll the BUSY bit in the Status register, or

wait the specified time TSE, TBE or TPP for Sector-Erase, Block-Erase, or Page-Programming, respec-

tively. The total write time before suspend and after resume will not exceed the uninterrupted write

times TSE, TBE or TPP

Read Security ID

To execute a Read Security ID (SID) operation, the host drives CE# low, sends the Read Security ID

command cycle (88H), one address cycle, and then two dummy cycles. Each cycle is two nibbles long,

most significant nibble first.

After the dummy cycles, the device outputs data on the falling edge of the SCK signal, starting from the

specified address location. The data output stream is continuous through all SID addresses until termi-

nated by a low-to-high transition on CE#. The internal address pointer automatically increments until

the last SID address is reached, then outputs 00H until CE# goes high.

Figure 19:Read SID Sequence

Address Dummy

Command Data Byte 0

MSN LSN

Data Byte 1 Data Byte 2

1409 F45.0

012

SCK

SIO[3:0]

CE#

C1C0 A1 A0 X H0XXX L0 H1 L1 H2 L2

78 111091312

MODE 3

MODE 0

Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Program Security ID

The Program Security ID instruction programs one to 24 Bytes of data in the user-programmable,

Security ID space. The device ignores a Program Security ID instruction pointing to an invalid or pro-

tected address, see Table 7. Prior to the program operation, execute WREN.

To execute a Program SID operation, the host drives CE# low, sends the Program Security ID com-

mand cycle (A5H), one address cycle, the data to be programmed, then drives CE# high. The pro-

grammed data must be between 1 to 24 Bytes and in whole Byte increments; sending an odd number

of nibbles will cause the last nibble to be ignored. Each cycle is two nibbles long, most significant nib-

ble first. To determine the completion of the internal, self-timed Program SID operation, poll the BUSY

bit in the software status register, or wait TPSID for the completion of the internal self-timed Program

Security ID operation.

Lockout Security ID

The Lockout Security ID instruction prevents any future changes to the Security ID. To execute a Lock-

out SID, the host drives CE# low, sends the Lockout Security ID command cycle (85H), then drives

CE# high. A cycle is two nibbles long, most significant nibble first. The user map polls the BUSY bit in

the software status register or waits TPSID for the completion of he Lockout Security ID operation.

Read-Status Register (RDSR)

The Read-Status register (RDSR) command outputs the contents of the Status register. The Status register

may be read at any time even during a Write operation. When a Write is in progress, check the BUSY bit

before sending any new commands to assure that the new commands are properly received by the device.

To execute a Read-Status-Register operation the host drives CE# low, then sends the Read-Status-

ately after the command cycle, the device outputs data on the falling edge of the SCK signal. The data

output stream continues until terminated by a low-to-high transition on CE#. See Figure 20 for the

RDSR instruction sequence.

Figure 20:Read-Status-Register (RDSR) Sequence

Table 7: Program Security ID

Program Security ID Address Range

Pre-Programmed at factory 00H – 07H

User Programmable 08H – 1FH

T7.0 1409

1409 F11.0

MODE 3 0

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

H0 L0

MSN LSN

H0 L0

Status Byte Status Byte Status Byte Status Byte

Note: MSN = Most Significant Nibble; LSN = Least Significant Nibble

C[1:0] = 05H

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Write-Enable (WREN)

The Write Enable (WREN) instruction sets the Write-Enable-Latch bit in the Status Register to ‘1,’

allowing Write operations to occur. The WREN instruction must be executed prior to any of the follow-

ing operations: Sector Erase, Block Erase, Chip Erase, Page Program, Program Security ID, Lockout

Security ID, Write Block-Protection Register and Lockdown Block-Protection Register. To execute a

Write Enable the host drives CE# low then sends the Write Enable command cycle (06H) then drives

CE# high. A cycle is two nibbles (clocks) long, most significant nibble first. See Figure 21 for the WREN

instruction sequence.

Figure 21:Write-Enable Sequence

Write-Disable (WRDI)

The Write-Disable (WRDI) instruction sets the Write-Enable-Latch bit in the Status Register to ‘0,’ pre-

venting Write execution without a prior WREN instruction. To execute a Write-Disable, the host drives

CE# low, sends the Write Disable command cycle (04H), then drives CE# high. A cycle is two nibbles

long, most significant nibble first.

Figure 22:Write-Disable (WRDI) Sequence

1409 F12.0

MODE 3 0 1

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

Note: C[1:0] = 06H

1409 F33.0

MODE 3 0 1

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

Note: C[1:0] = 04H

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Read Block-Protection Register (RBPR)

The Read Block-Protection Register instruction outputs the Block-Protection Register data which

determines the protection status. To execute a Read Block-Protection Register operation, the host

drives CE# low, and then sends the Read Block-Protection Register command cycle (72H). Each cycle

is two nibbles long, most significant nibble first.

After the command cycle, the device outputs data on the falling edge of the SCK signal starting with

the most significant nibble, see Table 8 for definitions of each bit in the Block-Protection Register. The

RBPR command does not wrap around. After all data has been output, the device will output 0H until

terminated by a low-to-high transition on CE#. See Figure 23.

Figure 23:Read Block Protection Register Sequence

Write Block-Protection Register (WBPR)

To execute a Write Block-Protection Register operation the host drives CE# low, sends the Write

Block-Protection Register command cycle (42H), sends 10 cycles of data, and finally drives CE# high.

Each cycle is two nibbles long, most significant nibble first. See Table 8 for definitions of each bit in the

Block-Protection Register.

Figure 24:Write Block Protection Register Sequence

1409 F34.0

MODE 3 0

SCK

SIO(3:0)

CE#

C1 C0

H0 L0

MSN LSN

H1 L1

H2 L2

H3 L3

H4 L4

H5 L5

HN L

BPR [m:m-7] BPR [7:0]

Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble

Block Protection Register (BPR) m = 79 for SST26WF032

C[1:0]=72H

1409 F35.0

MODE 3 0

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

H0 L0

MSN LSN

H1 L1

H2 L2

H3 L3

H4 L4

H5 L5

HN LN

BPR [m:m-7] BPR [7:0]

Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble

Block Protection Register (BPR) m = 79 for SST26WF032

C[1:0]=42H

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Table 8: Block-Protection Register for 26WF032 (1 of 2)1

BPR Bits

Address Range Protected Block SizeRead Lock Write Lock

79 78 3FE000H - 3FFFFFH 8 KByte

77 76 3FC000H - 3FDFFFH 8 KByte

75 74 3FA000H - 3FBFFFH 8 KByte

73 72 3F8000H - 3F9FFFH 8 KByte

71 70 006000H - 007FFFH 8 KByte

69 68 004000H - 005FFFH 8 KByte

67 66 002000H - 003FFFH 8 KByte

65 64 000000H - 001FFFH 8 KByte

63 3F0000H - 3F7FFFH 32 KByte

62 008000H - 00FFFFH 32 KByte

61 3E0000H - 3EFFFFH 64 KByte

60 3D0000H - 3DFFFFH 64 KByte

59 3C0000H - 3CFFFFH 64 KByte

58 3B0000H - 3BFFFFH 64 KByte

57 3A0000H - 3AFFFFH 64 KByte

56 390000H - 39FFFFH 64 KByte

55 380000H - 38FFFFH 64 KByte

54 370000H - 37FFFFH 64 KByte

53 360000H - 36FFFFH 64 KByte

52 350000H - 35FFFFH 64 KByte

51 340000H - 34FFFFH 64 KByte

50 330000H - 33FFFFH 64 KByte

49 320000H - 32FFFFH 64 KByte

48 310000H - 31FFFFH 64 KByte

47 300000H - 30FFFFH 64 KByte

46 2F0000H - 2FFFFFH 64 KByte

45 2E0000H - 2EFFFFH 64 KByte

44 2D0000H - 2DFFFFH 64 KByte

43 2C0000H - 2CFFFFH 64 KByte

42 2B0000H - 2BFFFFH 64 KByte

41 2A0000H - 2AFFFFH 64 KByte

40 290000H - 29FFFFH 64 KByte

39 280000H - 28FFFFH 64 KByte

38 270000H - 27FFFFH 64 KByte

37 260000H - 26FFFFH 64 KByte

36 250000H - 25FFFFH 64 KByte

35 240000H - 24FFFFH 64 KByte

34 230000H - 23FFFFH 64 KByte

33 220000H - 22FFFFH 64 KByte

32 210000H - 21FFFFH 64 KByte

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

31 200000H - 20FFFFH 64 KByte

30 1F0000H - 1FFFFFH 64 KByte

29 1E0000H - 1EFFFFH 64 KByte

28 1D0000H - 1DFFFFH 64 KByte

27 1C0000H - 1CFFFFH 64 KByte

26 1B0000H - 1BFFFFH 64 KByte

25 1A0000H - 1AFFFFH 64 KByte

24 190000H - 19FFFFH 64 KByte

23 180000H - 18FFFFH 64 KByte

22 170000H - 17FFFFH 64 KByte

21 160000H - 16FFFFH 64 KByte

20 150000H - 15FFFFH 64 KByte

19 140000H - 14FFFFH 64 KByte

18 130000H - 13FFFFH 64 KByte

17 120000H - 12FFFFH 64 KByte

16 110000H - 11FFFFH 64 KByte

15 100000H - 10FFFFH 64 KByte

14 0F0000H - 0FFFFFH 64 KByte

13 0E0000H - 0EFFFFH 64 KByte

12 0D0000H - 0DFFFFH 64 KByte

11 0C0000H - 0CFFFFH 64 KByte

10 0B0000H - 0BFFFFH 64 KByte

9 0A0000H - 0AFFFFH 64 KByte

8 090000H - 09FFFFH 64 KByte

7 080000H - 08FFFFH 64 KByte

6 070000H - 07FFFFH 64 KByte

5 060000H - 06FFFFH 64 KByte

4 050000H - 05FFFFH 64 KByte

3 040000H - 04FFFFH 64 KByte

2 030000H - 03FFFFH 64 KByte

1 020000H - 02FFFFH 64 KByte

0 010000H - 01FFFFH 64 KByte

T8.0 1409

1. All blocks are write-locked and read-unlocked after power-up or reset.

Table 8: Block-Protection Register for 26WF032 (Continued) (2 of 2)1

BPR Bits

Address Range Protected Block SizeRead Lock Write Lock

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Lockdown Block-Protection Register (LBPR)

The Lockdown Block-Protection Register instruction prevents changes to the Block-Protection Regis-

ter. Lockdown resets after power cycling; this allows the Block-Protection Register to be changed.

To execute a Lockdown Block-Protection Register, the host drives CE# low, then sends the Lockdown

Block-Protection Register command cycle (8DH), then drives CE# high. A cycle is two nibbles long,

most significant nibble first.

Figure 25:Lockdown Block-Protection Register

1409 F30.0

MODE 3 0 1

SCK

SIO(3:0)

CE#

C1 C0

MODE 0

Note: C[1:0]=8DH

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Electrical Specifications

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute

Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these conditions or conditions greater than those defined in the

operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-

ditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential. . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

1. Output shorted for no more than one second. No more than one output shorted at a time.

Table 9: Operating Range

Range Ambient Temp VDD

Industrial -40°C to +85°C 1.65-1.95V

Table 10: AC Conditions of Test1

1. See Figure 29

Input Rise/Fall Time Output Load

3ns CL = 30 pF

T10.1 1409

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Power-Up Specifications

All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100

ms (0V to 1.65V in less than 270 ms). See Table 11 and Figure 26 for more information.

Figure 26:Power-up Timing Diagram

Table 11: Recommended System Power-up Timings

Symbol Parameter Minimum Units

TPU-READ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

VDD Min to Read Operation 100 µs

TPU-WRITE1VDD Min to Write Operation 100 µs

T11.0 1409

Time

VDD Min

VDD Max

VDD

Device fully accessible

TPU-READ

TPU-WRITE

Chip selection is not allowed.

Commands may not be accepted or properly

interpreted by the device.

1409 F27.0

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

DC Characteristics

Table 12: DC Operating Characteristics (VDD = 1.65 - 1.95V)

Symbol Parameter

Limits

Test ConditionsMin Typ Max Units

IDDR Read Current 12 18 mA VDD=VDD Min,

CE#=0.1 VDD/0.9 VDD@80 MHz,

SO=open

IDDW Program and Erase Current 30 mA CE#=VDD

ISB1 Standby Current 8 25 µA CE#=VDD, VIN=VDD or VSS

ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max

ILO Output Leakage Current 1 µA VOUT=GND to VDD, VDD=VDD Max

VIL Input Low Voltage 0.3 V VDD=VDD Min

VIH Input High Voltage 0.7 VDD VV

DD=VDD Max

VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min

VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min

T12.0 1409

Table 13: Capacitance (TA = 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum

COUT1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Output Pin Capacitance VOUT = 0V 12 pF

CIN1Input Capacitance VIN = 0V 6 pF

T13.0 1409

Table 14: Reliability Characteristics

Symbol Parameter Minimum Specification Units Test Method

NEND1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Endurance 10,000 Cycles JEDEC Standard A117

TDR1Data Retention 100 Years JEDEC Standard A103

ILT H 1Latch Up 100 + IDD mA JEDEC Standard 78

T14.0 1409

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

AC Characteristics

Table 15: AC Operating Characteristics

Symbol Parameter

Limits - 25 MHz Limits - 80 MHz

UnitsMin Max Min Max

FCLK Serial Clock Frequency 25 80 MHz

TCLK Serial Clock Period 40 12.5 ns

TSCKH Serial Clock High Time 18 5.5 ns

TSCKL Serial Clock Low Time 18 5.5 ns

TSCKR1

1. Maximum Rise and Fall time may be limited by TSCKH and TSCKL requirements

Serial Clock Rise Time (slew rate) 0.1 0.1 V/ns

TSCKF1Serial Clock Fall Time (slew rate) 0.1 0.1 V/ns

TCES2

2. Relative to SCK.

CE# Active Setup Time 12 6 ns

TCEH2CE# Active Hold Time 12 5 ns

TCHS2CE# Not Active Setup Time 10 3 ns

TCHH2CE# Not Active Hold Time 10 3 ns

TCPH CE# High Time 100 12.5 ns

TCHZ CE# High to High-Z Output 15 12.5 ns

TCLZ SCK Low to Low-Z Output 0 0 ns

TDS Data In Setup Time 5 4 ns

TDH Data In Hold Time 5 4 ns

TOH Output Hold from SCK Change 0 0 ns

TVOutput Valid from SCK 15 6 ns

TSE Sector-Erase 25 25 ms

TBE Block-Erase 25 25 ms

TSCE Chip-Erase 50 50 ms

TPP Page-Program 1.5 1.5 ms

TPSID Program Security ID 0.2 0.2 ms

TWS Write-Suspend Latency 10 10 µs

T15.1 1409

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Figure 27:Serial Input Timing Diagram

Figure 28:Serial Output Timing Diagram

Table 16: Reset Timing Parameters

TR(i) Parameter Minimum Maximum Units

TR(o) Reset to Read (non-data operation) 10 ns

TR(p) Reset Recovery from Program or Suspend 100 µs

TR(e) Reset Recovery from Erase 1 ms

T16.0 1409

CE#

SIO

SCK

MSB LSB

TDS TDH

TCHH TCES TCEH TCHS

TSCKR TSCKF

TCPH

1409 F24.0

1409 F25.0

CE#

SIO

SCK

MSB

TCLZ

TSCKH

TCHZ

TOH

TSCKL

LSB

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Figure 29:Reset Timing Diagram

Figure 30:AC Input/Output Reference Waveforms

1409 F14.0

MODE 3

CLK

SIO(3:0)

CE#

MODE 3

C1 C3 C2C0

MODE 0

MODE 3

MODE 0MODE 0

TCPH

Note: C[1:0] = 55H; C[3:2] = AAH

1409 F28.0

REFERENCE POINTS OUTPUTINPUT

VHT

VLT

VHT

VLT

VIHT

VILT

AC test inputs are driven at VIHT (0.9VDD) for a logic ‘1’ and VILT (0.1VDD) for a logic ‘0’.

Measurement reference points for inputs and outputs are VHT (0.6VDD) and VLT (0.4VDD).

Input rise and fall times (10% ↔ 90%) are <3 ns.

Note: VHT - VHIGH Te s t

VLT - VLOW Test

VIHT - VINPUT HIGH Test

VILT - VINPUT LOW Test

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Product Ordering Information

Valid combinations for SST26WF032

SST26WF032-80-4I-QAE SST26WF032-80-4I-S2AE

Note: Valid combinations are those products in mass production or will be in mass production. Consult

your SST sales representative to confirm availability of valid combinations and to determine

availability of new combinations.

SST 26 WF032 -80 -4I -S2AE

XX XX XXX -XX-XX-XXXX

Environmental Attribute

E1 = non-Pb / non-Sn contact

(lead) finish

Package Modifier

A = 8 leads or contacts

Package Type

Q = WSON (6 mm x 5 mm)

S2 = SOIC (200 mil body width)

Temperature Range

I = Industrial = -40°C to +85°C

Minimum Endurance

4 = 10,000 cycles

Operating Frequency

80 = 80 MHz

Device Density

032 = 32 Mbit

Voltage

W = 1.65-1.95V

Product Series

26 = Serial Quad I/O (SQI) Flash

Memory

1. Environmental suffix “E” denotes non-Pb sol-

der. SST non-Pb solder devices are “RoHS

Compliant”.

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Packaging Diagrams

Figure 31:8-Contact Very-very-thin, Small-outline, No-lead (WSON)

SST Package Code: QA

Note: 1. All linear dimensions are in millimeters (max/min).

2. Untoleranced dimensions (shown with box surround)

are nominal target dimensions.

3. The external paddle is electrically connected to the

die back-side and possibly to certain VSS leads.

This paddle can be soldered to the PC board;

it is suggested to connect this paddle to the VSS of the unit.

Connection of this paddle to any other voltage potential can

result in shorts and/or electrical malfunction of the device.

8-wson-5x6-QA-9.0

4.0

1.27 BSC

Pin #1

0.48

0.35

0.076

3.4

5.00 ± 0.10

6.00 ± 0.10 0.05 Max

0.70

0.50

0.80

0.70

0.80

0.70

Pin #1

Corner

TOP VIEW BOTTOM VIEW

CROSS SECTION

SIDE VIEW

1mm

0.2

1.8V Serial Quad I/O (SQI) Flash Memory

SST26WF032

Advance Information

Figure 32:8-Lead, Small Outline Integrated Circuit (SOIC)

SST Package Code: S2A

Table 17: Revision History

Number Description Date

00 •Initial release of data sheet Nov 2009

01 •Updated Table 12 on page 30 and Table 15 on page 31 Jan 2010

2.16

1.75

08-soic-EIAJ-S2A-3

Note: 1. All linear dimensions are in millimeters (max/min).

2. Coplanarity: 0.1 mm

3. Maximum allowable mold flash is 0.15 mm at the package ends and 0.25 mm between leads.

TOP VIEW SIDE VIEW

END VIEW

5.40

5.15

8.10

7.70

5.40

5.15

Pin #1

Identifier

0.50

0.35

1.27 BSC

0.25

0.05

0.25

0.19

0.80

0.50

0°

8°

1mm

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036

www.SuperFlash.com or www.sst.com

SST and the SST logo are registered trademarks of Silicon Storage Technology, Inc. All trademarks and registered trademarks are

the property of their respective owners.

Specifications are subject to change without notice. Refer to www.sst.com for the most recent data sheet versions.

Memory sizes denote raw storage capacity; actual usable capacity may be less.

SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of

Sale which are available on www.sst.com.