AO This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance ReMOS [FET FIELD EFFECT POWER TRANSISTOR IRF 150,151 D86FL 9 K2 40 AMPERES 100, 60 VOLTS RDS(ON) = 9.055 0 in most switching applications including: switching power : supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features @ Polysilicon gate improved stability and reliability No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling 0.845(21.47} MAX. 065( 1.65) DIA N-CHANNEL CASE STYLE TO-204AE (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r- .358(9.09) MAX MAX. tT tt SEATING PLANE bem 426(10.82) MIN. CASE TEMP REFERENCE POINT 0.15(3.84) 2 HOLES 0.063; 1.60) Diaf be 0.057(1.45 } .20(5.00) SOURCE DRAIN 0.162(4.09) oa, 1.050(26.68) MAX" 0.675(17.15) 0.650(76.57) 0.225(5.72) 0.20815.21) 0.440(11.18) 0.420(10.67} 1.197(30.40) 1.177(29.90) 1,573(39.96) MAX ORAIN (CASE) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF150/D86FL2 tRF151/D86FK2 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Rag = 1M VpGR 100 60 Volts Continuous Drain Current @ Tc = 25C Ip 40 40 A Tc = 100C 25 25 A Pulsed Drain Current lpm 160 160 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 150 150 Watts Derate Above 25C 1.2 1.2 w/C Operating and Storage Junction Temperature Range Ty, TsTa -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rese 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Resa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 133Ip. DRAIN CURRENT (AMPERES) electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX UNIT off characteristics Drain-Source Breakdown Voltage IRF150/D86FL2 BVpss 100 _ _ Volts (Vag = OV, Ip = 250 vA) IRF151/D86FK2 60 _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Veg = OV, To = 25C) _ _ 250 BA (Vpg = Max Rating, x 0.8, V@sg = OV, To = 125C) _ 1000 Gate-Source Leakage Current | _ on characteristics Gate Threshold Voltage To = 25C | Vast) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 nA) On-State Drain Current _ _ (Vag = 10V, Vpg = 10V) ID(on) | 40 A Static Drain-Source On-State Resistance _ (Vgg = 10V, Ip = 20A) Rps(ON) 0.050 0.055 Ohms Forward Transconductance (Vpg = 10V, Ip = 20A) Sfs 8.1 10 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 2800 3000 pF Output Capacitance Vps = 25V Cogs _ 1000 1500 pF Reverse Transfer Capacitance f=1MHz Crss 225 500 pF switching characteristics* Turn-on Delay Time Vps = 30V td(on) _ 25 _ ns Rise Time Ip = 20A, Vas = 15V tr _ 145 _ ns Turn-off Delay Time RGen = 500, Res = 12.59. ta(off) _ 95 _ ns Fall Time (Reg (EQuiv.) = 109) tf _ 75 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 40 A Pulsed Source Current Ism ~ 160 A Diode Forward Voltage _ (To = 25C, Vag = OV, Ig = 40A) Vsp 18 2.8 Volts Reverse Recovery Time ter _ 300 _ ns (Ig = 40A, dig/dt = 100A/yusec, To = 125C) QrrR _ 2.8 _ uc *Pulse Test: Pulse width = 300 ys, duty cycle = 2% 600 200 1 80 60 40 20 0 Oms 8 OPERATION IN THIS AREA 6 4 MAY BE LIMITED BY Rosin; Dome IRF150/D86FL2 s\ PULSE 2 T= 25C pc 1 1 2 4 6 810 20 40 60 80100 Vos, DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 Rosion) AND Vegry) NORMALIZED CONDITIONS: RE(ON) CONDITIONS: Ip = 20 A, Vag = 10V Ves(tH) CONDITIONS: Ip = 250HA, Vos = Vag Rosiom) Vescri) ~40 0 40 80 Ty, JUNCTION TEMPERATURE (C) 120 160 TYPICAL NORMALIZED Ropgion) AND Vagirn VS. TEMP. 134