1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage VDSS 60 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs) VGS
VGSM ±20
±40 Vdc
Vpk
Drain Current
Continuous
Pulsed ID
IDM 200
500
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RθJA 357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
TL300 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc) V(BR)DSS 60 — Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
IDSS —
—1.0
1.0 µAdc
mAdc
Gate–Body Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0) IGSSF — –10 nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 3.0 Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
rDS(on) —
—5.0
6.0
Ohm
Drain–Source On–V oltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on) —
—2.5
0.45
Vdc
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N7000/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
123
Motorola Preferred Device
3 DRAIN
2
GATE
1 SOURCE
REV 3
2N7000
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1) (continued)
On–State Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc) Id(on) 75 — mAdc
Forward T ransconductance
(VDS = 10 Vdc, ID = 200 mAdc) gfs 100 — µmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 V V 0
Ciss —60 pF
Output Capacitance (VDS = 25 V, VGS = 0,
f = 1.0 MHz
)
Coss —25
Reverse T ransfer Capacitance
f
=
1
.
0
MHz)
Crss —5.0
SWITCHING CHARACTERISTICS(1)
Turn–On Delay Time (VDD = 15 V, ID = 500 mA, ton —10 ns
T urn–Off Delay Time
(DD ,D,
Rgen = 25 ohms, RL = 25 ohms) toff —10
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
ID, DRAIN CURRENT (AMPS)
rDS(on), ST ATIC DRAIN–SOURCE ON–RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
–60 –20 +20 +60 +100 +140 –60 –20 +20 +60 +100 +140
T, TEMPERA TURE (
°
C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
T, TEMPERA TURE (
°
C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25
°
C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V –55
°
C25
°
C
125
°
C
VGS = 10 V
ID = 200 mA VDS = VGS
ID = 1.0 mA
2N7000
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
2N7000
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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