sa Mal See SAMSUNG SEMICONDUCTOR. INC LYE OD op zteuaue oon73%9 4 I -Z% Ss $S9012 ___PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE : RADIOS IN CLASS 70-92 B PUSH-PULL OPERATION. * High total power dissipation: (PT=625mW) * High Collector Current. (lc-=500mA) Complementary to $S8013 Excellent hee linearity. - ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol Rating Unit Callecter-Base Voltage Vecso -40 Vv Collector-Emitter Voltage Veco 20 Vv Emitter-Base Voltage Veno ~5 Vv Collector Current Io 500 mA Collector Dissipation Pe 625 mw 1. Emitter 2, Base 3. Collector dunction Temperature Tj 150 C Storage Temperature Tstq -55~150 c ' ELECTRICAL CHARACTERISTICS (T.=25C) Characteristic Symbol Test Canditlon Min Typ Max Unit Collector-Base Breakdown Voltage BV ceo k=100pA, =O -40 Vv Collector-Emitter Breakdown Voltage | BVceo lk=1mA, ls=O0 ~20 Vv Emitter-Base Breakdown Voltage BVeo le=~ 100pA, Io=0 -5 v Collector Cutoff Current loao Ves=25V, Ir=0 ~100 nA Emitter Cutoff Current leno Veg= ~3V, lb =O -100 nA BC Current Gain heel Vee=-1V, le=-50mA 64 120 202 : hre2 Vece=1V, tce=500mA 40 90 Collector-Emitter Saturation Voltage Vce(sat) lc=~500mA, l=50mA -0.18 -0.6 Vv Base-Emitter Saturation: Voltage Vae(sat}) | lb=-500mA, Ip=-50mA -0.95 1.2 Vv Base-Emitter On Voltage Vee(on) Vee=-1V, le=-10mA -0.6 | -0.67 -0.7 Vv hre (1) CLASSIFICATION Classification D E F G H tre (1) 64-91 | 78-112 | 96-135 | 112-166 | 144.202 eke SAMSUNG SEMICONDUCTOR Oe 669SAMSUNG SEMICONDUCTOR INC WHE O Bf eacuase oo00?7400 7? i ss9012... PNP EPITAXIAL SILICON TRANSISTOR Ts T-3i-ar STATIC CHARACTERISTIC Boat ott _ DC CURRENT GAIN->: . Mes soe t i{mA), COLLECTOR CURRENT ter, DC CURRENT GAIN 0 -10 -20 -30 =40 +50 10 -30 -BO ~100 - ~300 -500 -1000 . : Veal}, COLLECTOR-EMITTER VOLTAGE k{mA), COLLECTOR CURRENT . CURRENT GAIN-BANDWIDTH PRODUCT -BASE-EMITTER SA COLLECTOR-EMITTER Vac(sath, Ver(zatl, (mV) SATURATION VOLTAGE (MHz, CURRENT GAIN-BANDWIDTH PRODUCT + 1 ~10 -30 -0 -100 7300 -500 1000 =1 -3-5-10 -30 160 -300. 1000 3000 ~10000 k{mA), COLLECTOR CURRENT fo{mA}, COLLECTOR CURRENT 62 sausune SEMICONDUCTOR - 670f ee rece emp ton et . 1W OUTPUT AMPLIFIER RADIOS. IN CLASS B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (lc=S00mA) Complementary to SS9012 Excellent hee linearity. ABSOLUTE MAXIMUM RATINGS (T.=25C) ~ ~~ ~ OS ue o Bpeseuay2 ooo74o1 9 7-3-2, NPN EPITAXIAL SILICON TRANSISTOR OF POTABLE TO-92 Characteristic Symbol Rating Unit Collector-Base Voltage Veso 40 Vv Collector-Emitter Voltage Veto 20 Vv Emitter-Base Voltage VeBO . 5 Vv Collector Current le 500 mA Collector Dissipation Pe 625 mw 1. Emitter 2. Base 3. Goflector Bi Junction Temperature Tj 150 C . . Storage Temperature Tstg ~5~150 C - - ELECTRICAL CHARACTERISTICS (T, =25C) Characteristic Symbol Test Conditions Min Typ Max Unit Collecter-Base Breakdown Voltage BV cao Ie=100pA, =O : 40 Vv Collector-Emitter Breakdown Voltage | -BVcro k=1mA, la=O0 20 Vv Emitter-Base Breakdown Voltage BVeso te=100pA, k=O 5 Vv Collector. Cutoff Current leno Vea=26V, le=O0 100 nA Emitter Cutoff Current . lepo Ven=3V, [=O 100 nA DG Current Gain fee Vee=1V, b=50mA 64 120 202 hre2 Vee=1V, b=500mA 40 120 Collector-Emitter Saturation Voltage Vce(sat) | le=500mA, lp=SOmA 0.16 0.6 Vv Base-Emitter Saturation Voltage Vee(Sat) ls=500mA, le=50mA 0.91 1.2 Vv Base-Emitter On Voltage Voee(on) Voe=1V, k=10mA 0.6 0.67 0.7 Vv - a . hee (1) CLASSIFICATION Classification D E F G H' Dee (1} 64-91 | 78-112 | 96-195 | 112-166 ; 144-202 che SAMSUNG SEMICONDUCTOR 674, SAMSUNG SEMICONDUCTOR . INC _ LYE OD B eanyis2 oo07402-0 i $S9013 NPN EPITAXIAL SILICON TRANSISTOR T-31-21 STATIC CHARACTERISTIC DC CURRENT. GAIN i I I i = i = 3 | 3, B | B : & = i 4 3 k 8 8 a j q i f 3 i Qo {oO 20 30 40 50 1 395 10 30 50 100 300 1000 3000 10000 Ves(V), COLLECTOR-EMITTER VOLTAGE . . . i{mA), COLLECTOR CURRENT. BASE-EMITTER SATURATION VOLTAGE ARENT GAIN-BANDWIDTH PROD COLLECTOR-EMITTER SATURATION VOLTAGE cu wi ODUCT Vee(sat), Vce(sat), (MV) SATURATION VOLTAGE i(MH2), CURRENT GAIN-BANDWIDTH PRODUCT 1, 3 10 w 100 300 1000 3000 = 10000 1 3 10 30 100 300 61000 3000 610000 felmA), COLLECTOR CURRENT L{maA), COLLECYOR CURRENT ce SAMSUNG SEMICONDUCTOR 672SAMSUNG SEMICONDUCTOR INC = NE D Bj eaeusue 0007403 2 i Tars9 Sssg9014 ~ NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE * High total power dissipation. (PT=450mW) * High bye and good linearity e Complementary to SS9015 TO-92 ABSOLUTE MAXIMUM RATINGS (T.=25C) ; Characteristic Symbol! Rating Unit t | Cotector-Base Voltage Veo 50 Vv \ Colfector-Emitter Voltage Veo 45 Vv Emitter-Base Voltage Vewo 5 Vv Collector Current bc 100 mA Collector Dissipation Po 450 mw Junction Temperature Tj 150 C Storage Temperature Tstg ~55~150 C 4. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Conditions | Min Typ Max Unit Collector-Base Breakdown Voltage BV ceo tc=100pA, le=O 60 v Collector-Emitter Breakdown Voltage | BVceo tg=1mA, lp=0 45 Vv Emitter-Base Breakdown Voltage BV:z0 le 1O0HA, Ie=O 5 v Collector Cutoff Current kcao Vca=SOV, le=0 50 nA Emitter Cutoff Current lepo Vea=5V, k=O 50 nA DC Current Gain bre Voce SV, Ic= IMA 60 280 1000 Collector-Base Saturation Voltage Vee(sat) | lc=100mA, Ipa=SmA 0.14 0.3 Vv Base-Emitter Saturation Voltage Vee(sat) c= 100mA, la=SmA 0.84 1.0 Vv Base-Emitter On Voltage Vee(on) | Vce=5V, le=2mA 0.68 | 0.63 0.7 v Output Capacitance Cob Vop=10V, =O 2.2 3.6 pF . f=1MHz Current Gain-Bandwidth Product fr Voce SV, lo=10mA 1650 270. MHz Noise Figure . NF Vce=5V, lo=0.2mA 0.9 40 dBo f=1KHz, Re=2K0 hre CLASSIFICATION Classification Ao B Cc D Dee 60-150 100-300 200-600 400-1000 rH SAMSUNG SEMICONDUCTOR 673SAMSUNG SEMICONDUCTOR INC 4c 0 Pf seynu2 ooozvoy 4 Bf $S9014 NPN EPITAXIAL SILICON TRANSISTOR T-2d- 149 s STATIC CHARACTERISTIC DG CURRENT GAIN, Io(mA), COLLECTOR CURRENT het, DC CURRENT GAIN 10 20 30 40 50 1 305 10 30 50 100 300 1000 4 Vee{V), COLLECT-EMITTER VOLTAGE te{mA), COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT COLLECTOR-EMITTER SATURATION VOLTAGE Vee(sat), Vee(sat), (mV) SATURATION VOLTAGE {MHz}, CURRENT GAIN-BANDWIDTH PRODUCT 1 305 10 30 50 100 300 1000 1 385 10 30 59 100 300 1000 K{mA), COLLECTOA CURRENT k{mA), COLLECTOR CURRENT ae SAMSUNG SEMICONDUCTOR 674