2SD874A) - Panasonic - Datasheet.Directory

Transistor

2SD0874, 2SD0874A (2SD874, 2SD874A)

Silicon NPN epitaxial planer type

For low-frequency power amplification

Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)

■Features

●Large collector power dissipation PC.

●Low collector to emitter saturation voltage VCE(sat).

●Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

■Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector EIAJ:SC–62

3:Emitter Mini Power Type Package

4.5±0.1

2.6±0.1

2.5±0.1

0.4max.1.0

+0.1

–0.2

4.0

+0.25

–0.20

3.0±0.15

1.5±0.1

0.4±0.08

0.5±0.08

1.5±0.1

0.4±0.04

1.6±0.2

45°

marking

321

Symbol

VCBO

VCEO

VEBO

ICP

PC*

Tstg

Ratings

1.5

150

–55 ~ +150

Unit

˚C

2SD0874

2SD0874A

2SD0874

2SD0874A

■Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base

voltage

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

VCBO

VCEO

VEBO

hFE1*1

hFE2

VCE(sat)

VBE(sat)

Cob

Conditions

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 2mA, IB = 0

IE = 10µA, IC = 0

VCE = 10V, IC = 500mA*2

VCE = 5V, IC = 1A*2

IC = 500mA, IB = 50mA*2

= 10V, I

= –50mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

min

typ

160

0.2

0.85

200

max

0.1

340

0.4

1.2

Unit

µA

MHz

2SD0874

2SD0874A

2SD0874

2SD0874A

*1hFE1 Rank classification

Rank Q R S

hFE1 85 ~ 170 120 ~ 240 170 ~ 340

2SD0874 ZQ ZR ZS

2SD0874A YQ YR YS

Marking symbol : Z(2SD0874)

Y(2SD0874A)

Marking

Symbol

*Printed circuit board: Copper foil area of 1cm2 or more, and the board

thickness of 1.7mm for the collector portion

*2 Pulse measurement

Note.) The Part numbers in the Parenthesis show

conventional part number.

Transistor 2SD0874, 2SD0874A

PC — Ta IC — VCE VCE(sat) — IC

VBE(sat) — IChFE — ICfT — IE

Cob — VCB Area of safe operation (ASO)

0 16040 12080 14020 10060

1.4

1.2

0.4

1.0

0.8

0.2

0.6

Printed circut board: Copper

foil area of 1cm2 or more, and

the board thickness of 1.7mm

for the collector portion.

Ambient temperature Ta (˚C)

Collector power dissipation P

(W)

0108264

1.50

1.25

1.00

0.75

0.50

0.25

Ta=25˚C

IB=10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage VCE (V)

Collector current I

(A)

0.01 0.1 1 100.03 0.3 3

0.001

0.003

0.01

0.03

0.1

0.3

10 I

=10

25˚C

–25˚C

Ta=75˚C

Collector current IC (A)

Collector to emitter saturation voltage V

CE(sat)

(V)

0.01 0.1 1 100.03 0.3 3

0.01

0.03

0.1

0.3

100 IC/IB=10

Ta=–25˚C

25˚C

75˚C

Collector current IC (A)

Base to emitter saturation voltage V

BE(sat)

(V)

0.01 0.1 1 100.03 0.3 3

600

500

400

300

200

100

Ta=75˚C

25˚C

–25˚C

VCE=10

Collector current IC (A)

Forward current transfer ratio h

–1–3–10 –30 –100

200

160

120

=10V

Ta=25˚C

Emitter current IE (mA)

Transition frequency fT (MHz)

1 3 10 30 100

IE=0

f=1MHz

Ta=25˚C

Collector to base voltage VCB (V)

Collector output capacitance C

(pF)

0.1 1 10 1000.3 3 30

0.01

0.1

0.03

0.3

Single pulse

TC=25˚C

t=1s

2SD0874

2SD0874A

ICP

Collector to emitter voltage VCE (V)

Collector current I

(A)

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2001 MAR