Ordering number:ENN3962A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode FP103 DC/DC Converter Applications Package Dimensions unit:mm 2088A [FP103] 4.5 3.4 2.8 0.5 1.8 0.5 7 6 1.0 0.5 1.57 4 5 3 1.75 2 1 0 to 0.1 0.2 0.3 1.75 3.5 0.7 1.2 Specifications 0.4 0.2min 1.5 2.5 4.25max * Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. * The FP103 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB07-03C, placed in one package. 0.5 Features 1 : Base 2 : Common (Collector/Cathode) 3 : Emitter 4 : Common (Collector/Cathode) 5 : Anode 6 : Common (Collector/Cathode) 7 : Common (Collector/Cathode) SANYO : PCP4 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO -30 V Collector-to-Emitter Voltage VCEO -25 V Emitter-to-Base Voltage VEBO IC -6 V -2 A ICP IB -5 A Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature PC Tj Strage Temperature Tstg -400 Mounted on a ceramic board (250mm2x0.8mm) mA 1.3 W 150 C -55 to +150 C V [SBD] Repetitive Peak Reverse Voltage V RRM 30 Non-repetitive Peak Reverse Surge Voltage VRSM IO 35 V 700 mA Average Rectified Current Junction Temperature Surge Forward Current IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1cycle 5 A -55 to +125 C -55 to +125 C Marking:103 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80700TS (KOTO)/52098HA (KT)/62094MT (KOTO) AX-8057 No.3962-1/5 FP103 Electrical Characteristics at Ta = 25C .Parameter Symbol Ratings Conditons min typ max Unit [TR] Emitter Cutoff Current Collector Cutoff Current ICBO IEBO DC Current Gain hFE1 hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-100mA Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO A A 560 65 150 VCB=-10V, f=1MHz IC=-1.5A, IB=-75mA VBE(sat) IC=-1.5A, IB=-75mA V(BR)CBO IC=-10A, IE=0 V(BR)CEO IC=-1mA, RBE= Collector-to-Base Breakdown Voltage 140 VCE=-2V, IC=-1.5A VCE=-10V, IC=-50mA -0.1 -0.1 MHz 32 IE=-10A, IC=0 pF -0.35 -0.6 V -0.85 -1.2 V -30 V -25 V -6 V Turn-ON Time ton See specified Test Circuit 60 ns Storage Time tstg See specified Test Circuit 350 ns tf See specified Test Circuit 25 ns Fall Time [SBD] Forward Voltage Reverse Voltage VR VF Reverse Current IR IF=700mA VR=15V Interterminal Capacitance C VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit Thermal Resistance Rthj-a IR=300A 30 V 0.55 V 80 A 28 pF 10 Mounted on a ceramic board (250mm2x0.8mm) ns 120 Electrical Connection C C C B C E (Top view) A Switching Time Test Circuit [SBD] IB2 PW=20s D.C.1% Duty10% OUTPUT IB1 INPUT 50 100 10s 1k RL VR --5V 50 + 220F VBE= 5V 10 100mA 100mA [TR] 10mA trr + 470F VCC= --12V --20IB1=20IB2=IC= --500mA No.3962-2/5 FP103 IC -- VCE --8mA --6mA --4mA --2mA --0.4 --1.5 --1.0 --0.5 IB=0 0 0 --0.4 --0.8 --1.2 0 --1.6 [TR] 2 --25C 100 7 5 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC - A 3 --1.2 ITR09911 [TR] VCE= --10V 5 3 2 7 5 3 2 10 --0.01 5 3 5 [TR] 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 7 5 3 2 3 [TR] IC / IB=20 7 100 2 ITR09913 VCE(sat) -- IC --1000 f=1MHz 5 3 2 --100 7 5 25C 3 C 75 = Ta 2 5 --2 C --10 7 5 10 --1.0 2 3 5 7 2 --10 3 Collector-to-Base Voltage, VCB - V 5 5 7 --0.01 7 2 3 5 7 --0.1 Collector Current, IC - A 2 3 5 7 --1.0 Collector Current, IC - A 2 3 5 ITR09916 3 5 ITR09915 [TR] 10 0m ms s 10 IC 2 --1.0 DC 7 5 op era tio 3 n 2 --0.1 3 7 --0.01 2 ICP 3 7 5 3 5 7 --1.0 s 75C 5 3 1m Ta= --25C 2 ASO 5 7 5 7 --0.1 --10 2 25C 3 [TR] IC / IB=20 --1.0 2 Collector Current, IC - A ITR09914 VBE(sat) -- IC 3 5 2 ITR09912 Cob -- VCB 2 Output Capacitance, Cob - pF --1.0 100 3 Base-to-Emitter Saturation Voltage, VBE (sat) - V --0.8 f T -- IC 1000 Gain-Bandwidth Product, f T - MHz Ta=75C 25C --0.6 7 5 3 --0.4 Base-to-Emitter Voltage, VBE - V VCE= --2V 7 --0.2 ITR09910 hFE -- IC 1000 0 --2.0 Collector-to-Emitter Voltage, VCE - V DC Current Gain, hFE --2.0 Collector Current, IC - A --2 mA --10mA --0.8 [TR] VCE= --2V --14mA --12mA --1.2 IC -- VBE --2.5 Ta=75 C 25C --25C A --1 8 Collector Current, IC - A --1.6 [TR] --16m 0m A --2.0 Ta=25C Single pulse Mounted on a ceramic board(250mm2x0.8mm) 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Emitter Voltage, VCE - V ITR09917 No.3962-3/5 FP103 PC -- Ta 1.4 [TR] Collector Dissipation, PC - mW 1.3 M ou nte do na 1.2 1.0 0.8 ce ram ic bo ard 0.6 0.4 (2 50 m m2 x0 .8 m m ) 0.2 0 0 20 40 60 100 120 140 160 ITR09918 IF -- VF 2 IR -- VR [Di] 3 2 Reverse Current, IR - A 3 2 0.1 7 5 --25C 0.01 7 5 25C 25 2 75C C 3 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage, VF - V 100C 5 3 2 10 75C 50C 5 3 2 1.0 25C 5 3 2 0.1 5 3 0 0.7 10 20 7 Surge Forward Current, IS (Peak) - A 100 7 5 3 2 10 7 5 40 50 60 ITR09920 IS -- t [Di] [Di] Current waveform 50Hz sine wave f=1MHz Interterminal Capacitance, C - pF 30 Forward Voltage, VR - V ITR09919 C -- VR 2 C 5 3 2 100 3 [Di] Ta=125 1000 1.0 7 5 Ta= 1 Forward Current, IF - A 80 Ambient Temperature, Ta - C 6 IS 20ms t 5 4 3 2 1 0 3 7 1.0 2 3 5 7 10 2 Reverse Voltage, VR - V 3 5 7 100 ITR09921 7 0.01 2 3 5 7 0.1 2 3 Time, t - s 5 7 1.0 2 3 ITR09922 No.3962-4/5 FP103 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.3962-5/5