40 DIII-H Series HITACHI (High Voltage Range, VDSS from 250V) The DII-H Series further expands Hitachi's line- Narrow threshold voltage, VTH up of advanced MOSFET devices. Recently, new e Low input capacitance additional high-voltage products to complement those of the low-voltage DIII-L Series. It has the The immediate advantage of a narrow VGS(OFF) following enhanced features:- voltage range is that engineers are released from the tiresome constraint of designing with sloppy High gate to source breakdown voltage device parameters. Table 7 shows the current Low ON- STATE resistance, RDS(ON) DIU high voltage of Power MOSFETs. Table 7 : DITI-H Series Typical Characteristics Type Number 2SK1151 Kil 880 2SK1636 2SK1313 28K1314 28K1540 1 K1315 2SK1316 2SK1618 K1624 K1 64 2SK1 2SK1667 761 K1400 2S5K1400A 2SK11 Kl 2SK115 2SK1156 TO-220AB 2SKil Kl K1159 2SK1160 28K1402 2SK1402A 2SK1809 28K 1338 2SK1807 2SK1668 2SK1762 2SK1862 K1863 2S K1626 TO-220FM 2SK1 2SKi 2SK1567 2SK1572 2SK163 2SK1404 2S K1808 Absolute Maximum Ratings Electrical Characteristics (typ.) RDS(on) (Q) VDSS VGSS ID Pch * lyfsl ton toff (Vv) (vy) (A) cw) Tmax | ** (as) (ns) 1 - 1 1.5 20 1 . . 3 15 . 1 5 - 35 +30 70 sl 72 33 38 45 68 SB] afpay[afales oo 60 27 35 70 72 38 45 68 85 27 35 70 33 600 - - 3 900 . 75 Notes: * : Value at Te = 25C ** + Test condition Rpsion) : Vos =4V,10V, Ip =", Ip max (DC) lyfsl : Vpg = 10V,Ip =", Ip max (DC) [_] : Built in high speed diode version