VS-ST280CH Series
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Phase Control Thyristors
(Hockey PUK Version), 500 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB)
• Extended temperature range
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 500 A
VDRM/VRRM 400 V, 600 V
VTM 1.35 V
IGT 90 mA
TJ-40 °C to +150 °C
Package A-PUK (TO-200AB)
Circuit configuration Single SCR
A-PUK (TO-200AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
500 A
Ths 80 °C
IT(RMS)
1130 A
Ths 25 °C
ITSM
50 Hz 7200 A
60 Hz 7500
I2t50 Hz 260 kA2s
60 Hz 230
VDRM/VRRM 400 to 600 V
tqTypical 100 μs
TJ-40 to 150 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST280CH..C 04 400 500 75
06 600 700
VS-ST280CH Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
double side (single side) cooled
500 (185) A
80 (110) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1130
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
7200
t = 8.3 ms 7500
t = 10 ms 100 % VRRM
reapplied
6000
t = 8.3 ms 6300
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
260
kA2s
t = 8.3 ms 235
t = 10 ms 100 % VRRM
reapplied
180
t = 8.3 ms 165
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 2600 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.84 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.88
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.50 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.47
Maximum on-state voltage VTM Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Maximum (typical) latching current IL1000 (300)
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd 0.67 % VDRM, TJ = 25 °C 1.0
μs
Typical turn-off time tqITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT
S
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 75 mA
VS-ST280CH Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
180 -
mATJ = 25 °C 90 150
TJ = 150 °C 30 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.9 -
VTJ = 25 °C 1.8 3.0
TJ = 150 °C 1.0 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.30 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
storage temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.17
K/W
DC operation double side cooled 0.08
Maximum thermal resistance,
case to heatsink RthC-hs
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 % 4900
(500)
N
(kg)
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet A-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.016 0.017 0.011 0.011
TJ = TJ maximum K/W
120° 0.019 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
VS-ST280CH Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
40
120
80
50
130
90
60
140
100
70
110
150
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
100 200 300 400 500
0
30°
60° 90°
120°
180°
ST280CH..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction angle
100 200 300 400 500 600 700
0
20
120
80
40
130
90
60
30
50
140
100
70
110
150
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
DC
30°
60°
90°
120°
180°
ST280CH..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction period
20
120
80
40
130
90
60
30
50
140
100
70
110
150
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
100 300 500200 400 600 700 800
0
30°
60°
90°
ST280CH..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
120°
180°
Ø
Conduction angle
20
120
80
30
130
90
40
50
60
140
100
70
110
150
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
200 400 600 1000 1200
8000
DC
30° 60°
90°
120°
180°
ST280CH..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Conduction period
0
1000
600
200
1100
700
400
100
300
1200
800
500
900
1300
Maximum Average
On-State Power Loss (W)
Average On-State Current (A)
100 200 300 600 800
500 700
4000
180°
120°
90°
60°
30° RMS limit
ST280CH..C Series
T
J
= 150 °C
Ø
Conduction angle
0
1400
600
1600
800
200
1000
400
1200
1800
Average On-State Current (A)
200 400 600 800 12001000
0
Maximum Average
On-State Power Loss (W)
DC
180°
120°
90°
60°
30° RMS limit
ST280CH..C Series
TJ = 150 °C
Ø
Conduction period
VS-ST280CH Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
3000
4500
5000
3500
5500
4000
6000
6500
Peak Half Sine Wave
On-State Current (A)
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
10 100
1
ST280CH..C Series
Initial T
J = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated VRRM applied following surge.
2500
6000
4000
7000
6500
4500
3000
5000
3500
5500
7500
Pulse Train Duration (s)
0.1 1
0.01
Peak Half Sine Wave
On-State Current (A)
versus pulse train duration. Control
of conduction may not be maintained.
ST280CH..C Series
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
Maximum non-repetitive surge current
100
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
1.0 2.01.5 2.5 3.0 3.5 4.0
0.5
TJ = 25 °C
TJ = 150 °C
ST280CH..C Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
ZthJ-hs - Transient
Thermal Impedance (K/W)
10
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
ST280CH..C Series
VS-ST280CH Series
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95074
0.1
1
10
100
0.001 0.01 0.1 1
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
10 100
VGD
IGD
(b)
(a)
TJ = 40 °C
TJ = 25 °C
(1) (2) (3)
a) Recommended load line for
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
Frequency limited by PG(AV)
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
tr ≤ 1 µs
(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 40 W, tp = 1 ms
(4) PGM = 60 W, tp = 0.66 ms
Device: ST280CH..C Series
TJ = 150 °C
Rectangular gate pulse
(4)
- Thyristor2
- Essential part number
3
- 0 = converter grade
4
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
- CH = ceramic PUK, high temperature
6
- C = PUK case A-PUK (TO-200AB)
7
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)8
- Critical dV/dt:
9
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 28 0 CH 06 C 1 -
1- Vishay Semiconductors product
Outline Dimensions
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A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
DIA. MAX. 0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
25° ± 5°
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
42 (1.65) MAX.
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
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