2N4261
Silicon PNP Transisto
r
Data Sheet
Description
• Screening and processing per MIL-PRF-19500 Appen di x E
• JAN level (2N4261J)
• JANTX level (2N4261JX)
• JANTXV level (2N4261JV)
• JANS level (2N4261JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose switching transistor
• Low po wer
• PNP silicon transistor
Features
• Hermetically sealed TO-72 metal can
• Also available in chip configuration
• Chi p ge ometry 0014
• Reference docum ent :
MIL-PRF-19500/511
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 15 Volts
Collector-Base Voltage VCBO 15 Volts
Emitter-Base Voltage VEBO 4.5 Volts
Collector Current, Continuous IC30 mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT200
1.14 mW
mW/°C
Thermal Resistance RθJA 0.86 °C/mW
Operating Junction Temperature
Storage Temperature TJ
TSTG -65 to +200 °C
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
Copyright© 2010
SEMICOA Corporation offers:
Please contact SEMICOA for special configurations
SEMICOA Corporation
2N4261
Silicon PNP Transisto
r
Data Sheet
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 15 Volts
Collector-Base Cutoff Current ICBO VCB = 15 Volts 10 µA
Collector-Emitter Cutoff Current
ICEX1
ICEX2
ICEX3
VCE = 10Volts, VBE = 0.4Volts
VCE = 10 Volts, VBE = 2 Volts
VCE = 10 Volts, VBE = 2 Volts,
TA = 150°C
50
5
5
nA
nA
µA
Emitter-Base Cutoff Current IEBX VBE = 2 Volts, VCE = 10 Volts 5 nA
Emitter-Base Cutoff Current IEBO VEB = 4.5 Volts 10 µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 1 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
IC = 30 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
25
30
20
15
150
Base-Emitter Voltage VBE1
VBE2
VCE = 1 Volts, IC = 1 mA
VCE = 1 Volts, IC = 10 mA
0.8
1.0 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 1 mA, IB = 0.1 mA
IC = 10 mA, IB = 1 mA
0.15
0.35 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE1|
|hFE2|
f = 100 MHz
VCE = 4 Volts, IC = 5 mA
VCE = 10 Volts, IC = 10 mA
15
20
Open Circuit Output Capacitance COBO VCB = 4 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 2.5
pF
Open Circuit Inpu t Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 2.5
pF
Collector Base time constant
rb’CC1
rb’CC2
VCE = 4 Volts, f = 31.8 MHz
IC = 5 mA
IC = 10 mA
60
50 ps
Switching Characteristics
Saturated Turn-On Time tON VCC = 17 Volts, IC = 10 mA 2.5 ns
Saturated Turn-Off Time tOFF VCC = 17 Volts, IC = 10 mA 3.5 ns
Copyright© 2010 SEMICOA Corporation
