0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
1. Derate power dissipation linearly 2.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum
from housing.
PACKAGE DIMENSIONS
FEATURES
• D= 880 nm
• Chip material = AlGaAs
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
• Narrow Emission Angle, 18°
• High Output Power
• Package material and color: Clear, peach tinted, plastic
Parameter Symbol Rating Unit
Operating Temperature TOPR -40 to +100 °C
Storage Temperature TSTG -40 to +100 °C
Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C
Continuous Forward Current IF100 mA
Reverse Voltage VR5V
Power Dissipation(1) PD200 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ANODE
CATHODE
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength IF= 20 mA DPE —880 —nm
Emission Angle IF= 100 mA 0—±9 —Deg.
Forward Voltage IF= 100 mA, tp = 20 ms VF——1.7 V
Reverse Current VR= 5 V IR——10 µA
Radiant Intensity QED121 IF= 100 mA, tp = 20 ms IE16 —40 mW/sr
Radiant Intensity QED122 IF= 100 mA, tp = 20 ms IE32 —100 mW/sr
Radiant Intensity QED123 IF= 100 mA, tp = 20 ms IE50 —— mW/sr
Rise Time IF= 100 mA tr—800 —ns
Fall Time tf—800 —ns
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C)
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
2001 Fairchild Semiconductor Corporation
DS300336 4/19/01 1 OF 3 www.fairchildsemi.com
Normalized to:
IF= 100 mA, TA = 25˚C
Pulse Width = 100 µs
10
1
110
NORMALIZED RADIANT INTENSITY
IF - INPUT CURRENT (mA)
Fig. 1 Normalized Radiant Intensity vs. Input Current
100 1000
0.1
0.01
0.001
NORMALIZED COLLECTOR CURRENT
LENS TIP SEPERATION (INCHES)
Fig. 2 Coupling Characteristics of QED12X and QSD12X
01
1
0.8
0.6
0.4
0.2
0
23456
Normalized to:
Pulse Width = 100 µs
Duty Cycle = 0.1%
VCC = 5 V
RL = 100 1
TA = 25˚C
IF = 100 mA
IF = 20 mA
2.5
2
1.5
1
0.5
-30-40 -20 -10 0 10 20 30 40 50 60 70 80 90 100
0
VF - FORWARD VOLTAGE (V)
TA - TEMPERATURE (˚C)
Fig. 3 Forward Voltage vs. Temperature
IF = 10 mA
IF = 100 mA
IF = 20 mA
IF = 50 mA
Pulse Width = 100 µs
Duty Cycle = 0.1%
Fig. 5 Radiation Pattern
Fig. 4 Normalized Radiant Intensity vs. Wavelength
D (nm)
775 800 825 850 875 900 925 950
NORMALIZED RADIANT INTENSITY
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 20406080100020406080100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0˚
10
20
30
40
50
60
70
80
90
TYPICAL PERFORMANCE CURVES
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
www.fairchildsemi.com 2 OF 3 4/19/01 DS300336
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
DS300336 4/19/01 3 OF 3 www.fairchildsemi.com
