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Page <1> V1.012/09/14
NPN General Purpose Amplifier
Features:
• For general AF application
• Complementary PNP type available BC807
• High collector current, high current gain.
• Low collector-emitter saturation voltage
Applications:
• General purpose medium power amplier
• Switching requiring collector currents up to 1.2mA
Maximum Ratings: @Ta = 25°C unless otherwise specied
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 50
V
Collector-Emitter Voltage VCEO 45
Emitter-Base Voltage VEBO 5
Collector Current -Continuous IC500 mA
Collector Dissipation PC300 mW
Junction and Storage Temperature Tj,Tstg -55 to 150 °C
Electrical Characteristics: @Ta = 25°C unless otherwise specied
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = 10μA IE = 0 50 -
VCollector-emitter breakdown voltage V(BR)CEO IC = 10mA IB = 0 45 -
Emitter-base breakdown voltage V(BR)EBO IE = 1μA IC = 0 5 -
Collector cut-off current ICBO VCB = 45V IE = 0 - 0.1 μA
Emitter cut-off current IEBO VEB = 4V IC = 0 - 0.1 μA
DC current gain hFE
VCE = 1V IC = 100mA
VCE = 1V IC = 100mA
100
40
600 -
Collector-emitter saturation voltage VCE(sat) IC = 500mA IB = 50mA - 0.7
V
Base-emitter saturation voltage VBE(sat) IC = 500mA IB = 50mA - 1.2
collector capacitance Cob VCB = 10V f=1MHz - 10 pF
Transition frequency fT
VCE = 5V IC= 10mA
f = 100MHz 100 - MHz
Rank BC817-16
Range 100-250
Marking 6A
Classication of HFE(1)