R.B.063099 1920A20 20 Watts, 25 Volts, Class A 10 dB Gain Personal 1930 - 1990 MHz GENERAL DESCRIPTION The 1920A20 is a COMMON EMITTER transistor capable of providing 20 watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS BASE STATION LINEAR amplifier applications. It includes input prematching and utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55SW Style 2 COMMON EMITTER ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25C 190 Watts Maximum Voltage and Current Collector to Emitter Voltage (BVCES) Collector to Emitter Voltage (LVCEO) Emitter to Base Voltage (BVEBO) Collector Current (Ic) Maximum Temperatures Storage Temperature Operating Junction Temperature 55 V 27 V 3.5 V 14.0 Amps -65 to +150 C +200 C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL CHARACTERISTICS Pout Pin Pg IMD3 c VSWR1 Power Out Power Input Power Gain Intermodulation Distortion Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1930 - 1990 MHz VCE = 25 Volts Icq = 3.0 Amps Pave= +37 dBm At P1dB MIN TYP MAX 20 2.2 9.5 10 -38 30 UNITS W W dB dBc % 3:1 FUNCTIONAL CHARACTERISTICS @ 25C BVCES LVCEO BVEBO ICES hFE jc Collector to Emitter Breakdown Collector to Emitter Breakdown Emitter to Base Breakdown Collector Leakage Current DC - Current Gain Thermal Resistance Ie = 50 mA Ic = 50 mA Ie = 20mA Vce = 27 V Vce = 5V, Ic = 1A, Tc = 25oC 55 25 3.5 30 20 100 0.92 V V V mA C/W Initial Issue November 1998 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 Typical Performance 1920A20 POWER GAIN VS POWER OUTPUT Vce=25V, Icq=3.0A @ 1990MHz 0 -5 8 6 Gain (dB) -10 Rl(-dB) -15 4 2 -20 0 -25 1930 1940 1950 1960 1970 10 8 6 4 2 0 2.5 1980 1990 POWER OUTPUT VS POWER INPUT Vce=25V, Icq=3.0A @ 1990MHz INTERMOD DIST- dBc 22.5 20 17.5 15 12.5 10 7.5 5 2.5 0 0.2 Pout 0.4 0.6 20 -30 -40 -50 -60 -70 2 2.2 2.4 2.6 2.8 -0.5 3 -1 1.8 -1.5 1.6 -2 -2.5 2 4.25 Rcl (OHMS) 2.2 4.5 Xin (OHMS) Rin (OHMS) 17.5 COLLECTOR LOAD IMPEDANCE Vce=25V, Icq=3.0A, Pout= 20 W 0 FREQUENCY (MHz) 15 COLLECTOR CURRENT- Amps 2.4 Rin Xin 12.5 3rd order 5th order -20 SERIES INPUT IMPEDANCE Vce=25V, Icq=3.0A, Pout= 20 W 1930 1940 1950 1960 1970 1980 1990 10 POWER OUTPUT -Watts -10 0.82 1.02 1.25 1.47 1.73 1.4 7.5 ITERMOD DIST vs COLLECTOR CURRENT Po=37 dBm, Vce=25 @ 1990MHz 0 POWER INPUT - Watts 2 5 Gain (dB) FREQUENCY (MHz) POWER OUTPUTWatts 12 1.5 4 3.75 1 3.5 0.5 3.25 3 0 1930 1940 1950 1960 1970 1980 1990 Rcl Xcl FREQUENCY (MHz) Xcl (OHMS) 10 RETURN LOSS (dB) POWER GAIN (dB) 12 POWER GAIN - dB BROAD BAND POWER GAIN & RETURN LOSS Pout= 20 W, Vce = 25V, Icq=3.0A