R.B.063099
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS T HAT BE FORE T H E P RODUCT ( S ) DESCRIBE D HE REI N ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology In c. 3000 Oa kmead Village Dr ive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986- 8120
1920A20
20 Watts, 25 Volts, Class A
10 dB Gain
Personal 1930 – 1990 MHz
GENERAL DESCRIPTION
The 1920A20 is a COMMON EMITTER transistor capable of providing 20
watts of Class A, RF output power over the band 1930-1990 MHz. This
transistor is specifically designed for PERSONAL COMMUNICATIONS
BASE STATION LINEAR amplifier applications. It includes input
prematching and utilizes Gold metalization and HIGH VALUE EMITTER
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55SW Style 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25°
°°
°C 190 Watts
Maximum Voltage and Current
Collector to Emitter Voltage (BVCES) 55 V
Collector to Emitter Voltage (L VCEO) 27 V
Emitter to Base Voltage (B VEBO) 3.5 V
Collector Current (Ic) 14.0 Amps
Maximu m T e mpe r a t u r e s
Storage Temperature -65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 2 5°
°°
°C
SYMB OL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Out F = 1930 - 1990 MHz 20 W
Pin Power Input VCE = 25 Volts 2.2 W
PgPower Gain Icq = 3.0 Amps 9.5 10 dB
IMD3 Intermodulation Distortion Pave= +37 dBm -38 dBc
ηcCollector Efficiency At P1dB 30 %
VSWR1Load Mismatch Tolerance 3:1
FUNCTIONAL CHARACTERISTICS @ 25°
°°
°C
BVCES Collector to Emitter Breakdown Ie = 50 mA 55 V
LVCEO Collector to Emitter Breakdown Ic = 50 mA 25 V
BVEBO Emitter to Base Breakdo wn Ie = 20mA 3.5 V
ICES Collector Leakage Current Vce = 27 V 20 mA
hFE DC – Current Gain Vce = 5V, Ic = 1A, 30 100
θjc Thermal Resi sta nce Tc = 25oC0.92
°C/W
Initial Issue November 1998
Typical Performance 1920A20
POWER GAIN VS POWER OUTPUT
Vce=25V, Icq=3.0A @ 1990MHz
0
2
4
6
8
10
12
2.5 5 7.5 10 12.5 15 17.5 20
POWER OUTPUT -Watts
POWER GAIN - dB
Gain (dB)
POWER OUTPUT VS POWER INPUT
Vce=25V, Icq=3.0A @ 1990MHz
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
0.2 0.4 0.6 0.82 1.02 1.25 1.47 1.73
POWER INPUT - Watts
POWER OUT P UT-
Watts
Pout
SERIES INPUT IMPEDANCE
Vce=25V, Icq=3.0A, Pout= 20 W
1.4
1.6
1.8
2
2.2
2.4
1930 1940 1950 1960 1970 1980 1990
FREQUENCY (MHz)
Rin (OHMS)
-2.5
-2
-1.5
-1
-0.5
0
Xin (OHMS)
Rin
Xin
COLLECTOR LOAD IMPEDANCE
Vce=25V, Icq=3.0A, Pout= 20 W
3
3.25
3.5
3.75
4
4.25
4.5
1930 1940 1950 1960 1970 1980 1990
FREQUENCY (MHz)
Rcl (OHMS)
0
0.5
1
1.5
2
Xcl (OHMS)
Rcl
Xcl
BROAD BAND POWER GAIN & RETURN LOSS
Pout= 20 W, Vce = 25V, Icq=3.0A
0
2
4
6
8
10
12
1930 1940 1950 1960 1970 1980 1990
FREQUENCY (MHz)
POWER GAIN
(dB)
-25
-20
-15
-10
-5
0
RETURN LOSS
(dB)
Gain (dB)
Rl(-dB)
ITERMOD DIST vs COLLECTOR CURRENT
Po=37 dBm, Vce=25 @ 1990MHz
-70
-60
-50
-40
-30
-20
-10
0
2 2.2 2.4 2.6 2.8 3
COLLECTOR CURRENT- Amps
INTERMOD DIST- dBc
3rd order
5th order
