S9269 - Hamamatsu Photonics K.K. - Datasheet.Directory

www.hamamatsu.com

Si photodiode with preamp

Photodiode and preamp integrated with feed-

back resistance and capacitance

S9269 S9270

Precision photometry

Si photodiode for visible to near IR Si precision photometry

General-purpose optical measurementSmall package

S9269: 10.1 × 8.9 × 40 t mm

S9270: 16.5 × 15.0 × 4.15 t mm

Active area

S9269: 5.8 × 5.8 mm

S9270: 10 × 10 mm

FET input operational ampliﬁ er with low power dissipation

Built-in Rf=1 GΩ, Cf=5 pF

Low noise and NEP

Absolute maximum ratings (Ta=25 °C)

Electrical and optical characteristics (Ta=25 °C, Vcc=±15 V, RL=1 MΩ)

Features Applications

Parameter Symbol Value Unit

Supply voltage (op amp) Vcc ±20 V

Power dissipation P 500 mW

Operating temperature Topr -20 to +60 °C

Storage temperature Tstg -20 to +80 °C

Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings

is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute

maximum ratings.

S9269 and S9270 are low-noise photosensors consisting of a Si photodiode, op amp, and feedback resistance and capaci-

tance, all integrated into same package with a surface size equal to our standard ceramic packages. These photosensors

are ideal for a wide range of photometric applications including analytical equipment and measurement equipment. The

active area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Combina-

tions with various photodiodes such as UV sensitivity enhanced type, IR sensitivity suppressed type and IR sensitivity en-

hanced type are also available. (Custom order products)

Parameter Symbol Condition S9269 S9270 Unit

Min. Typ. Max. Min. Typ. Max.

Spectral response range λ-

340 to 1100

-nm

Peak sensitivity wavelength

λp- 960 - - 960 - nm

Feedback resistance (built-in)

Rf -1--1-GΩ

Feedback capacitance (built-in)

Cf -5--5- pF

Photo sensitivity S λ=λp0.5 0.62 - 0.5 0.62 - V/nW

Output noise voltage Vn Dark state, f=10 Hz - 7.3 - - 9.7 -

μVrms/Hz

1/2

Dark state, f=20 Hz - 6.5 - - 9.1 -

Noise equivalent power NEP λ=λp, f=10 Hz -12- -16-

fW/Hz1/2

λ=λp, f=20 Hz -12- -17-

Output offset voltage Vos Dark state - ±4 - - ±4 - mV

Cut-off frequency fc -3 dB - 32 - - 32 - Hz

Output voltage swing Vo RL=10 kΩ-13- -13- V

Supply current Icc Dark state - 0.3 0.6 - 0.3 0.6 mA

* Custom devices available with different Rf, Cf, etc.

Si photodiode with preamp S9269, S9270

Spectral response Frequency response

Wavelength (nm)

Photo sensitivity (V/nW)

300 1000800600400 500 700 900 1100

(Typ. Ta=25 °C, Vcc=±15 V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Frequency (kHz)

Relative output (dB)

-30

0.001 0.01 0.1 1 10

(Typ. Ta=25 °C, Vcc=±15 V)

-20

-10

KSPDB0239EB KSPDB0240EB

NEP vs. frequency Output noise voltage vs. frequency

100

101

102

103

104

0.001 0.01 0.1 1 10

Frequency (kHz)

NEP (fW/Hz1/2)

100 1000

(Typ. Ta=25 °C, Vcc=±15 V)

105

S9269

S9270

0.01

0.1

0.001 0.01 0.1 1 10

Frequency (kHz)

Output noise voltage (μVrms/Hz1/2)

100 1000

(Typ. Ta=25 °C, Vcc=±15 V)

100

S9269

S9270

KSPDB0241EA KSPDB0242EA

Si photodiode with preamp S9269, S9270

Application circuit example

Rf=1 GΩ

Cf=5 pF

PKG

V+

V-G

PHOTODIODE

KSPDC0050EA

10.1 ± 0.1

(Ceramic)

8.9 ± 0.1

(Ceramic)

Active area

5.8 × 5.8

Active area position accuracy

versus package center

-0.165 ≤ X ≤ +0.335

-0.25 ≤ Y ≤ +0.25

GND

Vcc-

OUT

Vcc+

5.7 1.8

7.4 ± 0.1

7.62

8.0

4.01.5

2.54 ± 0.12.54 ± 0.1

8.8 (PWB)

10.0 (PWB)

(4 ×) 0.45

Cu-Zn ALLOY

(4 ×)( 1.0)

0.75

2.0 ± 0.1

(2.0)

(5.0)

1.7

PWB

Solder

1.0 max.

Photosensitive

surface

Ceramic

Resin

Resin potting may extend a

maximum of 0.1 mm above the

upper surface of the package.

16.5 ± 0.2

(Ceramic)

12.7

13.8

14.8 (PWB)

5.08 ± 0.1 5.08 ± 0.1

12.5

15.0 ± 0.15

(Ceramic)

Active area

10 × 10

10.8 2.25

0.5

2.75

12.5 ± 0.2

16.3 (PWB)

Active area position accuracy

versus package center

-0.3 ≤ X, Y ≤ +0.3

GND

Vcc-

OUT

Vcc+

1.0 max.

1.7

0.9

2.15 ± 0.1

(2.0)

(5.0)

(4 ×) 0.45

Cu-Zn ALLOY

(4 ×)( 1.0)

Ceramic

PWB

Solder

Photosensitive

surface

Resin

Resin potting may extend a

maximum of 0.1 mm above the

upper surface of the package.

Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2)

KSPDA0160EB

KSPDA0161EB

S9270S9269

Cat. No. KSPD1066E02 Oct. 2011 DN

Si photodiode with preamp S9269, S9270

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact

us for the delivery specification sheet to check the latest information.

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of October, 2011.

O ESD

S9269, S9270 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body,

surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials, etc. As a countermeasure

against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following

precautions must be observed during use:

· To protect the device from electro static discharge which accumulate on the operator or the operator’s clothes, use a wrist strap or

similar tools to ground the operator’s body via a high impedance resistor (1 MΩ).

· A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the ﬂ oor in the work area.

· When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ.

· For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with

a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2.

O Wiring

If electric current or voltage is applied in reverse polarity to an electronic device such as a preampliﬁ er, this can degrade device

performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection.

Precautions for use